• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.1-7
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• 2015

In this study, properties of Pb-free solders for automotive electronics parts were discussed. Lead-free solders for electronics became important after RoHS (Restriction of the use of certain Hazardous Substances) to avoid environmental pollution. Also the growing electronic rate in automotive parts and ELV (End-of Life Vehicles) make Pb-free solder for automotive electronics to be inevitable trend. Definitely, Pb-free solder for automotive electronics should have good wettability, basic strength, but need more reliability than other solders, since it has harsh condition like high temperature, humidity and engine vibration. Thus, shear strength test, thermal shock, drop test and many others are needed to ensure the high reliability. This study describes the properties and requirements of Pb-free solders for automotive electronics.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.55-64
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• 1996

In this paper, we analyze packaging data of th eprinted board assemblies (PBAs) of an ATM switching system (the first network test bed) by statistical methods and discuss the relation between devices packaging area of a PBA and power consumption by a regression nalysis method. As a result, we evaluate the maximum power consumption of the PBA. And, this paper presents a forecasting mehtod of the packagable maximum power consumption per a PBA when TTL devices are replaced by ASIC or FPGA ones in a PBA. And, we forecast the possibility of packaging ATM switch circuit packs in the near future form a statistical viewpoint. These evaluation and forecasting results can reduce much development cost and time because trial nd error will not be made using these useful data when phase II ATM switching system will be realized in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.390-391
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• 2007

LED Packaging 과정 중 Die bond 재료로 Silver epoxy를 사용하여 Packaging 한 후 T3Ster 장비로 열 저항 값(Rth)을 측정하였다. Silver epoxy 의 접착 두께를 조절하여 열 저항 값을 측정하였고, 열전도도 값이 다른 Silver epoxy를 사용하여 열 저항 값을 측정하였다. Silver epoxy 접착 두께가 충분하여 Chip 전면에 고루 분포되었을 경우 그렇지 않은 경우보다 평균 4.8K/W 낮은 13.23K/W의 열 저항 값을 나타내었고, 열전도도가 높은 Silver epoxy 일수록 열전도도가 낮은 재료보다 평균 4.1K/W 낮은 12K/W의 열 저항 값을 나타내었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.347-356
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• 2001

The issues that influence the packaging of high-speed LiNbO$_{3}$ modulators are discussed, and packaging approaches that result in only minor degradation of the modulator's RF performance are described. The primary problems dealt in this paper, associated with high-speed device packaging, are fallen into the following five categories: die features, pigtailing, suppression of RF package resonance, RF launcher approach, termination approach. By considering factors to influence the modulator performance in packaging, a LiNbO$_{3}$ intensity modulator was fabricated and packaged to have S21 better than -3㏈ upto 10㎓ and S11 below -l5㏈ upto 18㎓.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.71-78
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• 2014

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.10a
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• pp.131-175
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• 2000

• Journal of Welding and Joining
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• v.23 no.2
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• pp.23-31
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• 2005

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.11a
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• pp.59-63
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• 1999

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.69-72
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• 2000

기판과의 동시소성에 의한 고주파 MCM-C(Multi-Chip-Module-Cofired)용 저항을 제작하고 6 GHz 까지의 RF 특성을 측정하였다. 기판은 저온 소성용 기판으로서 총 8층으로 구성하였으며, 7층에 저항체 및 전극을 인쇄하고 Via를 통하여 기판의 최상부까지 연결되도록 하였다 저항체 Pastes, 저항체의 크기, Via의 길이 변화에 따라서 저항의 RF 특성은 고주파일수록 더욱 DC 저항값에서부터 변화되는 양상을 보였다. 내부저항의 등가회로를 구현한 결과, 저항은 전송선로, Capacitance 성분이 혼재되어 있는 것으로 나타났으며 전극의 형태에 따라 Capacitance 성분이 많은 차이를 나타내었다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.12a
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• pp.45-61
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• 1999

General trend in electronics industry towards multimedia in the 21 century is presented here. All equipments require fast graphic processing together with thin and lightweight assembly technology. In Japan, CSP was developed and applied to mobile equipments for several years, and recently stacked die assembly technology is being developed. In addition, so-called flip chip technology is also being developed and which is applied to MCP and MCM little by little these days. Here current packaging technology in Japan is presented including above.