• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.95-99
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• 2018

최근 고집적 고출력 전자 패키지의 효율적인 열전달을 위한 기판 및 방열소재로서 절연성 고열전도 필름의 수요가 커지고 있어, 알루미나, 질화알루미늄, 질화보론, 탄소나노튜브 및 그래핀 등의 고열전도 필러소재를 사용한 고방열 복합소재에 대한 많은 연구가 이루어지고 있다. 그 중에서도 육방정 질화보론(h-BN) 나노시트가 절연성 고열전도 필러 소재로서 유력한 후보 물질로 선택되고 있다. 본 연구는 이 h-BN 나노시트와 PVA로 된 세라믹/폴리머 복합체 필름의 방열특성 향상에 관한 것이다. h-BN 나노시트는 h-BN 플레이크 원료 분말을 유기용매를 사용한 볼밀링과 초음파 처리에 의한 물리적 박리공정으로 만들었으며, 이를 사용한 h-BN/PVA 복합 필름을 제조한 결과 성형된 복합필름의 면방향과 두께방향 열전도도는 50 vol%의 필러함량에서 각각 $2.8W/m{\cdot}K$ 및 $10W/m{\cdot}K$의 높은 열전도도가 나타났다. 이 복합필름을 PVA의 유리전이온도 이상에서 일축 가압하여 h-BN 판상분말의 얼라인먼트를 향상시킴으로써 면방향 열전도도를 최대 $13.5W/m{\cdot}K$까지 증가시킬 수 있었다.

• 한국컴퓨터정보학회논문지
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• 제29권7호
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• pp.169-179
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• 2024

전자등기 및 블록체인시스템을 도입한 등기시스템 하에서 해당 전자정보로서의 부동산등기의 공신력을 확보하려면 이들 범죄 및 법률분쟁을 방지하는 방안으로 거래자의 신분증명 및 부동산등기 기재내용의 투명성을 마련하는 방법에 또한 블록체인 시스템을 이용하여 기록되는 방법으로 진행되어야 한다. 그 방안으로 거래자의 신분증명에 관한 신뢰성을 높이는 방법과 부동산등기부의 기재단계에서 등기관의 실질적 심사권을 인정하고 물권 등 권리사항의 기재시 공증단계를 거치는 등의 공신력 제고 방안을 검토하고 이 단계에서도 블록체인 시스템을 도입하여 무결성 및 신뢰성을 확보하는 방법을 고려해 봄직하다. 현행 부동산 등기 등 공부시스템이 블록체인 시스템으로 전환되기 전 단계에서 부동산 등기 기재사항의 명확성과 투명성, 실제 부동산과의 정합성이 갖추어져야 최종적으로는 부동산 공부에 관한 공신력이 인정될 수 있고 이로써 향후 블록체인시스템을 도입한 부동산공부시스템에 대하여 거래당사자의 신뢰를 담보하고 부동산 거래시장에서 부동산 공부에 대한 투명성과 무결성바탕으로 이를 신뢰한 당사자 간에 최종적으로는 스마트계약의 형태로 부동산거래가 이루어지는 목표에 가까워질 수 있게 될 것이다.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.412-419
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• 2024

Mn-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (Mn:PIN-PMN-PT) single crystals, which exhibit improved phase transition temperatures and coercive field properties compared to Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals, are expected to be utilized in high-power acoustic transducers. Bridgeman method, growing single crystals along the axial direction from melt, is most widely used method for single crystal growth with large size and high quality. However, single crystal boules grown by the Bridgeman method demonstrate a PT compositional variation, giving rise a distribution of crystal structure and material properties along the growing axis. To employ piezoelectric single crystals grown by the Bridgeman method for acoustic transducers, it is essential to investigate their overall property distribution. In this study, the compositional distribution and property variation of Mn:PIN-PMN-PT single crystals grown by the Bridgeman method was investigated. Measured compositional distribution of PT was from 29% to 32.5% in the Rhombohedral crystal region of the boule. Two types of specimen, [011]-poled Mn:PIN-PMN-29PT and Mn:PIN-PMN-32PT single crystals, were fabricated and tested to obtain full property variation at both ends of the Rhombohedral crystal region. The properties related to the 32 directional vibration mode and the properties related to high-power driving were measured to confirm the overall distribution of properties by composition.

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.297-303
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• 2024

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

• 전기화학회지
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• 제5권3호
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• pp.131-142
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• 2002

순환전압전류 및 교류임피던스 기법을 이용하여 다결정 Pt/0.5M $H_2SO_4$ 및 0.5M LiOH수용액 계면에서 저전위 수소흡착(UPD H) 과 전위 수소흡착(OPD H)에 관한 Langmuir 흡착등온식 $({\theta}\;vs.\;E)$ 을 연구조사 하였다. 계면에서 치적중간주파수일 때 위상이동$(0^{\circ}{\leq}{-\phi}{\leq}90^{\circ})$ 거동은 표면피복율$(1{\geq}{\theta}{\geq}0)$ 거동에 정확하게 상응한다. 위상이 동 방법 즉 최적중간주파수일 때 위상이동 변화$({-\phi}\;vs.\;E)$는 계면에서 음극 $H_2$ 발생 반응에 관한 UPD H와 OPDH의 Langmuir흡착등온식을 결정할 수 있는 새로운 전기화학적 방법으로 사용할 수 있다 다결정 Pt/0.5M $H_2SO_4$ 수용액 계면에서 OPD H의 흡착평형상수(K)와 표준자유에너지$({\Delta}G_{ads})$는 각각 $2.1\times10^{-4}$와 21.0kJ/mol 이다. 다결정 Pt/0.5M LiOH 수용액 계면에서 K는 음전위(E)에 따라 2.7 (UPD H)에서 $6.2\times10^{-6}$ (OPD H) 또는 $6.2\times10^{-6}$(OPD H)에서 2.7 (UPD H)로 전이한다. 유사하게 ${\Delta}G_{ads}$는 E에 따라 -2.5kJ/mol (UPD H)에서 29.7kJ/mol (OPD H)또는 29.7kJ/mol (OPD H)에서 -2.5kJ/mol (UPD H)로 전이한다. K와 ${\Delta}G_{ads}$의 전이는 다결정 Pt전극 표면의 상이한 UPD H와 OPD H의 흡착부위에 기인한다. 다결정 Pt전극 계면에서 UPD H와 OPD H는 음극 $H_2$ 발생 반응에 따른 순차적 과정이 아니라, 수소 흡착부위 자체에 따른 독립적 과정이다. UPD H와 OPD H의 기준은 음극 $H_2$발생 반응과 전위가 아니라, 수소 흡착부위와 과정이다. 수용액에서 음극 $H_2$발생 반응에는 다결정 Pt선 전극이 단결정 Pt(100)원반 전극보다 더 효율적이고 유용하다 위상이동 방법은 열역학적 방법과 상충적이 아니라, 보완적이다.

• 한국광물학회지
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• 제30권2호
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• pp.59-70
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• 2017

$SiO_2$는 지각과 맨틀을 구성하는 풍부한 물질로 고압 상태의 $SiO_2$ 원자구조를 결정짓는 전자구조적 특성에 대한 상세한 이해는 지구 내부의 탄성과 열역학적 성질에 대한 통찰을 제공한다. $SiO_2$처럼 경원소(low-z)로 이루어진 지구 물질의 고압상 전자구조는 in situ 고압 XRS (x-ray Raman scattering) 실험을 통해 연구되어 왔다. 하지만 기존의 고압 실험 방법으로는 물질의 국소 원자구조와 XRS 스펙트럼 간 상관관계를 밝히는데 한계가 있다. 이를 극복하고 더 높은 압력에서 존재하는 $SiO_2$에 대한 XRS 정보를 얻기 위해 밀도 범함수 이론(density functional theory; DFT)에 기반을 둔 제1원리(ab initio) 계산법을 이용한 XRS 스펙트럼 계산 연구들이 진행되고 있다. 비탄성 X-선 산란에 의하여 원자핵 주변 1s 오비탈에 만들어지는 전자-정공(core-hole)은 경원소 물질의 국소 전자구조에 크게 영향을 미치기 때문에 O K-edge XRS 스펙트럼 형태를 계산할 때 중요하게 고려해야 한다. 본 연구에서는 온-퍼텐셜 선형보충파(full-potential linearized augmented plane wave; FP-LAPW) 방법론에 기반하는 WIEN2k 프로그램을 사용하여 ${\alpha}-quartz$, ${\alpha}-cristobalite$ 그리고 $CaCl_2$-구조를 갖는 $SiO_2$에 대한 O 원자 전자 오비탈의 부분 상태밀도(partial density of states; PDOS)와 O K-edge XRS 스펙트럼을 계산하였다. 또한, $CaCl_2$-구조를 갖는 $SiO_2$의 O 원자 PDOS의 전자-정공 효과의 적용 여부에 따른 차이를 비교하여, 원자핵 부근 전자구조 변화에 따른 PDOS의 피크 세기와 위치 변화가 크게 나타났다는 사실을 확인할 수 있었다. 또한 계산된 각 $SiO_2$ 구조의 O K-edge XRS 스펙트럼이 각 $SiO_2$ 구조에서 계산된 O 원자의 $p^*$ 오비탈의 PDOS 결과와 매우 유사한 형태를 갖고 있음을 확인하였다. 이는 O K-edge XRS 스펙트럼이 갖는 대부분의 특징적인 피크들이 O 원자의 점유 1s 오비탈에서 $2p^*$ 오비탈로의 전자전이에 기인하기 때문이다. 본 연구의 결과는 $SiO_2$에 대한 정확한 O K-edge XRS 스펙트럼을 계산하는데 있어 전자-정공 효과를 고려해야 한다는 사실을 보여준다. 또한, 실험적으로는 재현이 어려운 고압 환경에 존재하는 $CaCl_2$-구조를 갖는 $SiO_2$ (~63 GPa)에 대한 O K-edge XRS 스펙트럼 계산을 통해, 제1원리 계산이 고압상 물질의 물성 연구에 이용될 수 있다는 사실을 보여준다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• 한국세라믹학회지
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• 제48권2호
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• pp.127-133
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• 2011

Non-Alkali multicomponent $La_2O_3-Al_2O_3-SiO_2$ glasses has been designed and analyzed on the basis of a mixture design experiment with constraints. Fitted models for thermal expansion coefficient, glass transition temperature, Young's modulus, Shear modulus and density are as follows: ${\alpha}(/^{\circ}C)=8.41{\times}10^{-8}x_1+5.72{\times}10^{-7}x_2+2.13{\times}10^{-7}x_3+1.09{\times}10^{-7}x_4+1.10{\times}10^{-7}x_5+1.15{\times}10^{-7}x_6+2.72{\times}10^{-8}x_7+2.41{\times}10^{-7}x_8-1.08{\times}10^{-8}x_1x_2+4.28{\times}10^{-8}x_3x_7-2.02{\times}10^{-8}x_3x_8-1.60{\times}10^{-8}x_4x_5-2.71{\times}10^{-9}x_4x_8-2.19{\times}10^{-8}x_5x_6-3.89{\times}10^{-8}x_5x_7$ $T_g(^{\circ}C)=7.36x_1+15.35x_2+20.14x_3+8.97x_4+13.85x_5+4.22x_6+28.21x_7-1.44x_8-0.84x_2x_3-0.45x_2x_5-1.64x_2x_7+0.93x_3x_8-1.04x_5x_8-0.48x_6x_8$ $E(GPa)=2.04x_1+14.26x_2-1.22x_3-0.80x_4-2.26x_5-1.67x_6-1.27x_7+3.63x_8-0.24x_1x_2-0.07x_2x_8+0.14x_3x_6-0.68x_3x_8+0.29x_4x_5+1.28x_5x_8$ $G(GPa)=0.35x_1+1.78x_2+1.35x_3+1.87x_4+9.72x_5+29.16x_6-0.99x_7+3.60x_8-0.48x_1x_6-0.50x_2x_5+0.08x_3x_7-0.66x_3x_8+0.94x_5x_8$ ${\rho}(g/cm^3)=0.09x_1+0.51x_2-4.94{\times}10^{-3}x_3-0.03x_4+0.45x_5-0.07x_6-0.10x_7+0.07x_8-9.60{\times}10^{-3}x_1x_2-8.20{\times}10^{-3}x_1x_5+2.17{\times}10^{-3}x_3x_7-0.03x_3x_8+0.05x_5x_8$ The optimal glass composition similar to the thermal expansion coefficient of Si based on these fitted models is $65.53SiO_2{\cdot}25.00Al_2O_3{\cdot}5.00La_2O_3{\cdot}2.07ZrO_2{\cdot}0.70MgO{\cdot}1.70SrO$.

• Journal of Preventive Medicine and Public Health
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• 제17권1호
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• pp.173-192
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• 1984

On the basis of the study intended to research by crosssectional study keeps pace with semilongitudinal study the growthaccelerating phenomena that Maximum Growth age in teenager's body-height. By the random sampling method, the subject of study are 12659 persons(male; 6355, female; 6304) that they are from 7 ages to 17 ages in the whole country including the rural community. The measurement period passed three month days, the statistical data became electronic data processing system with computer. The other side, body-height and MGA of Koreans who had been for during the period from 1925 to 1966 proved transition of the growth-accelerating phenomena by research data reported between 1913 and 1983. The results are as follows; 1. The Growth and Development-Value of Body-height An age bracket the growth and development-value of body-height were, respectively, male is $123.88{\pm}5.05cm$ and female is $123.29{\pm}5.54cm$ for 7 ages group. these indices increased with age. the top-value reach, respectively. $169.08{\pm}5.62cm$ and $157.57{\pm}6.13cm$. The intersecting ages of male and female were the age $8.5{\sim}12.5$, during these periods, female excelled male but after these periods, male excelled female again. In case of body-height, MGA's are 7.0cm for male between 12 and 13 ages, and 7.01cm for female between 8 and 9 ages. As a rule, body-height of male excelled female but intersection phenomena of male and female appeared between 8.5 and 12.5 ages. By reginal groups, it is most prevailing is Seoul, and medium size cities and rural community rome in order. By regional groups, intersection phenomena of male and female are. a region of Seoul; $$8.5{\sim}11.5$$ ages a region of Daejeon; $$7.5{\sim}9.5$$ ages rural community; $$11.5{\sim}14.5$$ ages the whole country's average; $$8.5{\sim}12.5$$ ages By regional groups, the rate of maximum increase in a year are a region of Seoul; male is 7.23cm as 13 ages female is 7.65cm as 9 ages. a region of Daejeon; male is 7.85cm as 11 ages. female is 8.39cm as 9 ages. rural community; male is 7.65cm as 14 ages. female is 6.25cm as 12 ages. the whole country's average; male is 7.0cm as 13 ages. female is 7.01 as 9 ages. 2. Maximum Growth Age (M.G.A.) By reginal groups, maximum Growth Age's are as below in a region of Seoul, MGA's are 12.63 for male and 9.01 for female, which shows that MGA for female appears about 3.5 years earlier than that for male. In a region of Daejeon, MGA's are 9.20 for male and 8.93 for female, which. show that they are all much the same in M.G.A. In rural community, MGA's are 14.00 for male and 11.89 for female, which shows that MGA for female apperars about 2 years earlier than that for male. In the whole average, MGA's are 13.01 for male and 8.97 for femal, which shows that for female appears about 4 years earlier than that for male. For boy, M.G.A. shows fastest-growing in Daejeon, and Seoul and rural commonly come in order. For girl, It shows equal growth in Seoul and Daejeon, rural community comes later. 3. The M.G.A's in body height of male are respectively the age 15.02 in 1913, 14.23 in 1956, 13.86 in 1967, 13.62 in 1975, and 12.82 in 1981, while those of female are the age 12.0 in 1940, 11.52 in 1965, 9.53 in 1975, and 11.16 in 1980; these data show that the MGA of the Koreans has been getting younger. 4. The equation of linear regression of all the MGA's in body height are as follow; Male: Y(M.G.A)=$-0.020{\times}$ (the year)+15.19: female:Y(MGA)=$-0.028{\times}$(the year)+13.2549. 5. The corelation of all the MGA's in body height are as below; male; r=-0.329 female;r=-0.252 6. From the transition of the growth-accelating phenomena in 1980 we can capture the fact that the MGA's has been getting younger by 0.2 year per 10 years. 7. The MGA's in bodyheight are shown in table 4... 8. The future growth-accelating phenomena in body height are expected to show the similar tendency like that of the past, in 1910's but it should by more precisely reviewed after investigating the phenomena of the years directly ahead.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.