• Title/Summary/Keyword: Electronic transition

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A study on transition of programming academic achievement for H/W majors (하드웨어 전공자들의 프로그래밍 학업성취도 추이에 관한 연구)

  • Lee, Seung-Woo
    • Journal of the Korean Data and Information Science Society
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    • v.25 no.3
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    • pp.501-512
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    • 2014
  • The purpose of this study is to improve the academic achievement of H/W majors. Firstly, this paper proposes the educational case study that develops the learner's ability, increases the interest in the unfavorable programming fields for the H/W majors, and plans to raise employment rate of programming. Secondly, this paper presents the future teaching method on programming driving improvement for the employment rate on the basis of the department's special characteristics and the actual circumstances in the field of the H/W. Lastly, this paper suggests the promising pedagogical method for educating programming by using a survey and the case studies.

Varition Microstructure for Heat treatment of Thin Films $BaTiO_3$ System ($BaTiO_3$계 세라믹 박막의 열처리에 따른 미세구조변화)

  • Park, Choon-Bae;Song, Min-Jong;Kim, Tae-Wan;Kang, Dou-Yol
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.293-295
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    • 1994
  • Barium Titanate ($BaTiO_3$) is one of the few titanateds which is cubic at room temperature. It has the perovskite structure, high dielectric constant (${\varepsilon}_r=300$) and a small temperature coefficient of resistance due to it's Low transition temperature ($Tc=120^{\circ}c$). PTCR (Positive Temperature Coefficient of Resistivity) thermistor in thin film $BaTiO_3$ system was prepared by using radio frequency (13.56MHz) and BC magnetron sputter equipment. Polycrystalline, and surface structure characteristics of the specimens were measured by X-ray diffraction (D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M. JSM84 01, Japan), respectively. Temperature at below $600^{\circ}C$, $1000^{\circ}C$ to $700^{\circ}C$, and above $1100^{\circ}C$ for spotted $BaTiO_3$ thin films showed the amorphous, degree of crystal growth, and polycrystalline, respectively.

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Effect of Phonons on Valley Depolarization in Monolayer WSe2

  • Chellappan, Vijila;Pang, Ai Lin Christina;Sarkar, Soumya;Ooi, Zi En;Goh, Kuan Eng Johnson
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.766-773
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    • 2018
  • In this paper, temperature dependence of the excitonic bands in a mechanically exfoliated tungsten diselenide ($WSe_2$) monolayer is studied using photoluminescence and circular dichroic photoluminescence (PL) in the temperature range between 8 and 300 K. The peak energies associated with the neutral exciton (A), charged exciton (trion) and localized excitons are extracted from the PL spectra revealing a trion binding energy of around 30 meV. The circular dichroic PL measured at 8 K shows about 45% valley polarisation that sharply reduces with increasing temperature to 5% at 300 K with photoexcitation energy of 1.96 eV. A detailed analysis of the emission line-width suggests that the rapid decrease of valley polarisation with the increase of temperature is caused by the strong exciton-phonon interactions which efficiently scatter the excitons into different excitonic states that are easily accessible due to the supply of excess photoexcitation energy. The emission line-width broadening with the increase of temperature indicate residual exciton dephasing lifetime < 100 fs, that correlates with the observed rapid valley depolarisation.

A Mechanistic Study on Nucleophilic Substitution Reactions of Aryl Substituted Benzenesulfonates with Anionic Nucleophiles

  • Um Ik-Hwan;Lee Seok-Joo;Kim Jung-Joo;Kwon Dong-Sook
    • Bulletin of the Korean Chemical Society
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    • v.15 no.6
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    • pp.473-477
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    • 1994
  • Second-order rate constants have been measured spectrophotometrically for the nucleophilic substitution reactions of aryl substituted benzenesulfonates $(1,\;X-C_6H_4SO_2-OC_6H_4-Y)$ with aryloxides $(Z-C_6H_4O^{-})$ and ethoxide $(EtO^-)$ in absolute ethanol at $25^{circ}C$. The nucleophilicity of aryloxides increases with increasing electron donating ability of the substituent (Z) on aryloxides, and results in a good Hammett correlation with $\sigma^{-}$ constant. The reactivity of 1 toward aryloxides and ethoxide shows also significant dependence on the electronic nature of the substituent X and Y. Large positive ${\sigma}_{acyl}$ values have been obtained for the reaction of 1 with phenoxide and ethoxide, indicating that the leaving group departure is little advanced at the transition-state of the rate-determining step. This has been further supported from the fact that ${\sigma}^-$ constant gives extremely poor Hammett correlation, while ${\sigma}^0$ does reasonably good correlation for the reaction of 1 with ethoxide. Thus, the present sulfonyl-transfer reaction is proposed to proceed via a ratedetermining attack of nucleophile to the sulfur atom of 1 followed by a fast leaving group departure.

Tetrathiafulvalene (TTF) Charge Transfer Compounds with Some Heavier Transition Metal (Au, Pt, Ir, Os) Chlorides

  • 정찬규;김영인;최성낙
    • Bulletin of the Korean Chemical Society
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    • v.17 no.11
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    • pp.1061-1065
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    • 1996
  • The charge transfer compounds of tetrathiafulvalene (TTF) with the general formula of (TTF)mMCln, (M=Au, Pt, Ir, Os) were prepared by the direct reaction using excess HAuCl4·3H2O, H2PtCl6·xH2O, H2IrCl6·xH2O and H2OsCl6 respectively. The powdered electrical conductivities (σrt) at room temperature are given as follows; (TTF)3AuCl2, 4.53×10-3; (TTF)3.5AuCl2, 6.37×10-3; (TTF)3PtCl4, 5.51×10-4; (TTF)2IrCl4, 2.40×10-5; (TTF)OsCl4·1/2C2H5OH, 4.46×10-7 Scm-1. Magnetic susceptibility, electronic (UV-Vis.), vibrational (IR) and EPR spectroscopic evidences indicate that there is incomplete charge transfer from the TTF donor to gold, platinum, and iridium respectively, and that there is essentially complete charge transfer to osmium, thereby resulting a relatively low electrical conductivity in osmium compound. The EPR and magnetic susceptibility data reflect that the metals are in diamagnetic Au(Ⅰ), Pt(Ⅱ), Ir(Ⅲ), and Os(Ⅱ) oxidation states, and the odd electrons are extensively delocalized over the TTF lattices in each compound.

Dioxygen Binding to the Singly Alkoxo-Bridged Diferrous Complex: Properties of [$Fe^{Ⅱ}_2$(N-Et-HPTB)$Cl_2$]$BPh_4$

  • 김은석;이강봉;Jang, Ho G.
    • Bulletin of the Korean Chemical Society
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    • v.17 no.12
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    • pp.1127-1131
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    • 1996
  • [FeⅡ2(N-Et-HPTB)Cl2]BPh4(1), where N-Et-HPTB is the anion of N,N,N',N'-tetrakis(N-ethyl-2-benzimidazolylmethyl)-2-hydroxy-l,3-diaminopropane, has been synthesized to model dioxygen binding to the diferrous centers of proteins. 1 has a singly bridged structure with a μ-alkoxo of N-Et-HPTB and contains two five-coordinate iron(Ⅱ) centers with two chloride ligands as exogenous ligands. 1 exhibits an electronic spectrum with a λmax at 336 nm in acetone. 1 in acetone exhibits no EPR signal at 4 K, indicating diiron(Ⅱ) centers are antiferromagnetically coupled. Exposure of acetone solution of 1 to O2 at -90 ℃ affords an intense blue color intermediate showing a broad band at 586 nm. This absorption maximum of the dioxygen adduct(1/O2) was found in the same region of μ-l,2-peroxo diiron(Ⅲ) intermediates in the related complexes with pendant pyridine or benzimidazole ligand systems. However, this blue intermediate exhibits EPR signals at g = 1.93, 1.76, and 1.59 at 4 K. These g values are characteristic of S = 1/2 system derived from an antiferromagnetically coupled high-spin Fe(Ⅱ)Fe(Ⅲ) units. 1 is the unique example of a (μ-alkoxo)diferrous complex which can bind dioxygen and form a metastable mixed-valence intermediate. At ambient temperature, most of 1/O2 intermediate decays to form a diamagnetic species. It suggests that the dacay reaction of the intermediate might be bimolecular, implying the formation of mixed-valence tetranuclear species in transition state.

TiO2 Nano-doping Effect on Flux Pinning and Critical Current Density in an MgB2 Superconductor

  • Kang, J.H.;Park, J.S.;Lee, Y.P.;Prokhorov, V.G.
    • Journal of Magnetics
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    • v.16 no.1
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    • pp.15-18
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    • 2011
  • We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

Thermoelectric and Transport Properties of FeV1-xTixSb Half-Heusler System Synthesized by Controlled Mechanical Alloying Process

  • Hasan, Rahidul;Ur, Soon-Chul
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.725-732
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    • 2018
  • The thermoelectric and transport properties of Ti-doped FeVSb half-Heusler alloys were studied in this study. $FeV_{1-x}Ti_xSb$ (0.1 < x < 0.5) half-Heusler alloys were synthesized by mechanical alloying process and subsequent vacuum hot pressing. After vacuum hot pressing, a near singe phase with a small fraction of second phase was obtained in this experiment. Investigation of microstructure revealed that both grain and particle sizes were decreased on doping which would influence on thermal conductivity. No foreign elements pick up from the vial was seen during milling process. Thermoelectric properties were investigated as a function of temperature and doping level. The absolute value of Seebeck coefficient showed transition from negative to positive with increasing doping concentrations ($x{\geq}0.3$). Electrical conductivity, Seebeck coefficient and power factor increased with the increasing amount of Ti contents. The lattice thermal conductivity decreased considerably, possibly due to the mass disorder and grain boundary scattering. All of these turned out to increase in power factor significantly. As a result, the thermoelectric figure of merit increased comprehensively with Ti doping for this experiment, resulting in maximum thermoelectric figure of merit for $FeV_{0.7}Ti_{0.3}Sb$ at 658 K.

Evolution of PKI Internet Banking in Korea

  • Park, Seungchul
    • International journal of advanced smart convergence
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    • v.8 no.1
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    • pp.44-57
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    • 2019
  • Most banks in Korea have provided Internet banking services based on PKI(Public Key Infrastructure) certificates since the early 2000s when Internet banking began in Korea. To support PKI Internet banking, the Korean government backed the electronic signature law and supported the rapid spread of PKI-based Internet banking by regulating the application of PKI certificates to be compulsory in Internet banking until 2015. PKI Internet Banking in Korea has been developed as a pioneer in this field through many challenges and responses until its present success. Korea's PKI banking, which started with soft-token-based closed banking, has responded to various types of cyber attack attempts and promoted the transition to open banking by accepting various criticisms due to lack of compatibility with international standards. In order to improve the convenience and security of PKI Internet banking, various attempts have been made, such as biometric-integrated smartphone-based PKI authentication. In this paper, we primarily aim to share the experience and lessons of PKI banking by analyzing the evolution process of PKI Internet banking in Korea. It also has the purpose of presenting the challenges of Korea's PKI Internet banking and sharing its development vision.

Design of Low Area Decimation Filters Using CIC Filters (CIC 필터를 이용한 저면적 데시메이션 필터 설계)

  • Kim, Sunhee;Oh, Jaeil;Hong, Dae-ki
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.3
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    • pp.71-76
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    • 2021
  • Digital decimation filters are used in various digital signal processing systems using ADCs, including digital communication systems and sensor network systems. When the sampling rate of digital data is reduced, aliasing occurs. So, an anti-aliasing filter is necessary to suppress aliasing before down-sampling the data. Since the anti-aliasing filter has to have a sharp transition band between the passband and the stopband, the order of the filter is very high. However, as the order of the filter increases, the complexity and area of the filter increase, and more power is consumed. Therefore, in this paper, we propose two types of decimation filters, focusing on reducing the area of the hardware. In both cases, the complexity of the circuit is reduced by applying the required down-sampling rate in two times instead of at once. In addition, CIC decimation filters without a multiplier are used as the decimation filter of the first stage. The second stage is implemented using a CIC filter and a down sampler with an anti-aliasing filter, respectively. It is designed with Verilog-HDL and its function and implementation are validated using ModelSim and Quartus, respectively.