• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.198-203
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• 2012

In this study, $[Li_{0.04}(Na_{0.5}K_{0.5})_{0.96}](Nb_{0.86}Ta_{0.10}Sb_{0.04})O_3+xSrO$ (x=0, 0.0025, 0.005, 0.0075) ceramics were synthesized by the conventional mixed oxide method. The X-ray diffraction patterns demonstrated that ceramics possessed single perovskite structure. The SEM images indicate that microstructure can be obviously affected by a small amount of added SrO. The phase transition temperature tetragonal-cubic($T_c$) and orthorhombic-tetragonal($T_{o-t}$) shifts downward and upward with the increase of Sr addition, respectively. The excellent piezoelectric properties of $d_{33}=170[pC/N]$, $k_p=0.37$, $Q_m=64.12$, $T_{o-t}=153^{\circ}C$ and $T_c=370^{\circ}C$ were obtained from the 0.25 mol% Sr added ceramics sintered at $1,120^{\circ}C$ for 1 h.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.3
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• pp.313-318
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• 2018

A coaxial band rejection filter is designed and fabricated for a beam interacting cavity. The proposed filter has a quarter wavelength choke for the dominant mode of the cavity. The equivalent circuit of the coaxial band rejection filter is presented and the ABCD parameter os each part is derived to obtain the ABCD parameter of the entire filter. The scattering matrix was obtained from the ABCD matrix and the was simulated by MATLAB using the obtained scattering matrix. The coaxial band rejection filter structure was simulated using HFSS, and the results confirmed the simulation using the equivalent circuit was useful. The designed coaxial band rejection filter was fabricated with 6-1/8 flange. The fabricated filter was measured using a transition from 6-1/8 flange to N-type flange. The insertion loss of the fabricated filter is greater than 25 dB in the dominant mode of the cavity and less than 0.25 dB in the first higher order mode. The measurement results are in good agreement with the simulated results and meet the design specification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.624-627
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• 2001

Two kinds of Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$, the sintering samples and zone melting samples, were heat treated under pure Ar at 95$0^{\circ}C$. The substitution of Nd ion for Ba ion in the Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ before and after the heat treatment were investigated by XRD. In order to know the effects of the heat treatment, the T$_{c}$ and J$_{c}$ of samples with the heat treatment and those without the heat treatment by Ar were comparatively studied. The results show that the substitution of Nd for Ba decreased, T$_{c}$, and J$_{c}$ increased after the treatment under Ar at 95$0^{\circ}C$. The Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ samples were oxygenated under pure oxygen at 30$0^{\circ}C$. From the XRD pattern it was found that the sample with x< 0.4 could transfer from tetragonal phase to orthorhombic phase after the oxygenation, but the sample with x>0.4 could not make the phase transition even after a long time oxygenation.ion even after a long time oxygenation.ation.n.ation.ation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.330-337
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• 2005

La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes in which Mg site was partially substituted by Fe, Co or Ni (0.05, 0.1, 0.15 at.％) were fabricated by conventional solid-state reaction and their sintered densities were above 94％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The ac complex impedance were measured at 400。C to l000。C in air and fitted with a Solatron ZView program. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes substituted by Fe, Co or Ni was higher than that of pure La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.05/Ni/sub 0.15/O/sub 3-δ/ electrolyte was 3.4×10/sup -2/ Scm/sup -1/ at 800。C and the highest value of the whole electrolytes.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.50-50
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• 1994

Half-metallic Heusler alloys (NiMnSb, ppdMnSb, pptMnSb) have attracted much attention due to their unique electronic and magnetic structures. Sppin-ppolarized band structure calculation ppredicts metallic behavior for the majority sppin states and semiconductor behavior for the minority sppin states. We have studied the electronic structures of these half-metallic Heusler alloys by core-level pphotoemission sppectroscoppy of Mn 2pp and 3s XppS sppectra. We found large intensities of Mn 2pp satellites and 3s exchange spplitting comppared with other metal Mn-alloys. These satellite structure can be understood by applying Anderson imppurity model. This fact supports the calculated sppin pprojected ppartial density of states which suggests that the valence electrons be highly sppin ppolarized near Fermi level and that the electrons involved with charge-transfer be mainly minority sppin ones which have semiconducting band structure. The trend of charge transfer energies Δ from ligands (Sb 5pp) to Mn 3d, obtained from our model fitting, is consistent with that calculated from sppin pprojected ppartial density of state. Also the trend of d-d electron correlation energies U calculated from Mn Auger line L3 VV by Mg $K\alpha$ source is comppatible with that resulted from our model fitting. We fitted the Mn 3s curve in the same way as for insulating Mn comppounds by using the same pparameters calculated from Mn 2pp curve fitting exceppt for the Coulomb interaction energy Q between core hole and d-electrons. The 3s sppectra were analyzed by combing the charge transfer model and a simpple model taking into account the configuration mixing effect due to the intra-shell correlation. We found that the exchange interaction between 3s hole and 3d electrons is mainly respponsible for the satellite of Mn 3s sppectra. This is consistent with the neutron scattering data, which suggests local 3d magnetic moment. We find that the XppS analysis results of Mn 2pp and 3s satellite structures of half-metallic Heusler alloys are very similar to those of insulating transition metal comppounds.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.2
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• pp.288-295
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• 2011

The paper proposes a localization method of an underwater robot using Monte Carlo Localization(MCL) approach. Localization is one of the fundamental basics for autonomous navigation of an underwater robot. The proposed method resolves the problem of accumulation of position error which is fatal to dead reckoning method. It deals with uncertainty of the robot motion and uncertainty of sensor data in probabilistic approach. Especially, it can model the nonlinear motion transition and non Gaussian probabilistic sensor characteristics. In the paper, motion model is described using Euler angles to utilize the MCL algorithm for position estimation of an underwater robot. Motion model and sensor model are implemented and the performance of the proposed method is verified through simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.210-213
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• 2002

The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.938-941
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• 2003

It is well known that the state of existence of molecules on the surface of water changes during compression of the molecules. Electric methods, such as measurement of the surface potential or displacement current are also useful for investigating dynamic changes of molecular state on the water surface during compression and Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic thin film that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. In this paper Langmuir (L) that is one of basis technology to manufacture of organic matter device using biology material PBDG that is kind of polypeptide that have biology adaptedness. The Experiment method used ${\pi}-A$ isotherm and BAM(Brewster Angle Microscopy), using the BAM, we can to the molecular orientation of monolayer on the water surface and directly see the morphology of the films on water subphase as well as that of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.189-189
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• 2010

The Improved flux-lock type superconducting fault current limiter(SFCL) is composed of a series transformer and superconducting unit of the YBCO coated conductor. The primary and secondary coils in the transformer were wound in series each other through an iron core and the YBCO coated conductor was connected with secondary coil in parallel. In a normal condition, the flux generated from a primary coil is cancelled out by its structure and the zero resistance of the YBCO thin films. When a fault occurs, the resistance of the YBCO coated conductor was generated and the fault current was limited by the SFCL. In this paper, we investigated the fault current limiting characteristics through the spot at the beginning of the fault current in the Improved flux-lock type SFCL. The experiment results that the fault current limiting characteristics was difference according to the point of a fault current started. Through the analysis, it was shown that shorter the time of a phase transition.