• Title/Summary/Keyword: Electronic state

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A SPECTRAL SUBTRACTION USING PHONEMIC AND AUDITORY PROPERTIES

  • Kang, Sun-Mee;Kim, Woo-Il;Ko, Han-Seok
    • Speech Sciences
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    • v.4 no.2
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    • pp.5-15
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    • 1998
  • This paper proposes a speech state-dependent spectral subtraction method to regulate the blind spectral subtraction for improved enhancement. In the proposed method, a modified subtraction rule is applied over the speech selectively contingent to the speech state being voiced or unvoiced, in an effort to incorporate the acoustic characteristics of phonemes. In particular, the objective of the proposed method is to remedy the subtraction induced signal distortion attained by two state-dependent procedures, spectrum sharpening and minimum spectral bound. In order to remove the residual noise, the proposed method employs a procedure utilizing the masking effect. Proposed spectral subtraction including state-dependent subtraction and residual noise reduction using the masking threshold shows effectiveness in compensation of spectral distortion in the unvoiced region and residual noise reduction.

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A Study on the Linearity Synapse Transistor of Analog Memory Devices in Self Learning Neural Network Integrated Circuits (자기인지 신경회로망에서 아날로그 기억소자의 선형 시냅스 트랜지스터에 관한연구)

  • 강창수
    • Electrical & Electronic Materials
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    • v.10 no.8
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    • pp.783-793
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    • 1997
  • A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

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Sensorless Control of IPMSM using State Observer (상태관측기를 이용한 IPMSM의 센서리스 제어)

  • Song, Jae-Joo;Lee, Jeong-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05b
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    • pp.71-74
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    • 2003
  • The paper is proposed to position and speed control of interior permanent magnet synchronous motor(IPMSM) drive without mechanical sensor. A minimum order state observer is used for the mechanical state estimation of the motor. The observer was developed based on nonlinear model of IPMSM, that employs a d-q rotating reference frame attached to the rotor. A minimum order state observer is implemented to compute the speed and position feedback signal. The validity of the proposed sensorless scheme is confirmed by various response characteristics.

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A Defect Free Bistable C1 SSFLC Devices

  • Wang, Chenhui;Bos, Philip J.
    • Journal of Information Display
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    • v.4 no.1
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    • pp.1-8
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    • 2003
  • Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.

Diagnosis of Transform Aging using Discrete Wavelet Analysis and Neural Network (이산 웨이블렛 분석과 신경망을 이용한 변압기 열화의 전단)

  • 박재준;윤만영;오승헌;김진승;김성홍;백관현;송영철;권동진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.645-650
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    • 2000
  • The discrete wavelet transform is utilized as processing of neural network(NN) to identifying aging state of internal partial discharge in transformer. The discrete wavelet transform is used to produce wavelet coefficients which are used for classification. The mean values of the wavelet coefficients are input into an back-propagation neural network. The networks, after training, can decide if the test signals is aging early state or aging last state, or normal state.

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Step Response of RF Plasma in Carbon Tetrafluoride($CF_4$)

  • So, Soon-Youl;Akinori Oda;Hirotake Sugawara;Yosuke Sakai
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.930-933
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    • 2000
  • To understand the behavior of electron, ions and radicals on radio-frequency non-equilibrium plasma, it is necessary to know the basic information about its fundamental properties and reactions. Especially, the transient response of radio-frequency plasma has an important means of controlling selective etch rates and investigating the stability of a plasma chemical process. In this paper, we present the results of periodic steady-state behavior and transient behavior carbon Tetrafluoride(CF$_4$) discharge at 0.2 Torr in a 2 cm gap parallel-plate. After the number densities of charged particles became steady-state, the applied voltage was increased or decreased in an instant and the transient behavior of charged particles and radicals was investigated from one steady-state to the next steady state.

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Static and Dynamic Characteristics of PT-IGBT by Proton Irradiation (양성자 주입 조건에 따른 PT-IGBT의 정특성 및 동특성 분석)

  • Choi, Sung-Hwan;Lee, Yong-Hyun;Bae, Young-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.14-15
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    • 2007
  • Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.

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Review on State of Charge Estimation Methods for Li-Ion Batteries

  • Zhang, Xiaoqiang;Zhang, Weiping;Li, Hongyu;Zhang, Mao
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.136-140
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    • 2017
  • The state of charge (SOC) is an important parameter in a battery-management system (BMS), and is very significant for accurately estimating the SOC of a battery. Li-ion batteries boast of excellent performance, and can only remain at their best working state by means of accurate SOC estimation that gives full play to their performances and raises their economic benefits. This paper summarizes some measures taken in SOC estimation, including the discharge experiment method, the ampere-hour integral method, the open circuit voltage method, the Kalman filter method, the neural network method, and electrochemical impedance spectroscopy (EIS. The principles of the various SOC estimation methods are introduced, and their advantages and disadvantages, as well as the working conditions adopted during these methods, are discussed and analyzed.

A Study on the Linearity Synapse Transistor in Self Learning Neural Network (자기인지 신경회로망에서 선형 시냅스 트랜지스터에 관한 연구)

  • 강창수;김동진;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.59-62
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    • 2000
  • A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density, stress current, transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width$\times$length 10$\times$1${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gave unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

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A State Machine Design Pattern for Secure Ethereum Dapp (안전한 이더리움 분산 어플리케이션 개발을 위한 스테이트 머신 기반의 디자인 패턴)

  • Eom, Hyun-min;Lee, Myung-Joon
    • Proceedings of the Korean Society of Computer Information Conference
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    • 2019.01a
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    • pp.389-390
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    • 2019
  • 최근 블록체인 기반의 어플리케이션이 증가하고 이들을 위한 스마트 컨트랙트가 설계상 오류로 부적절하게 사용될 가능성이 증대되고 있다. 따라서 스마트 컨트랙트의 설계를 보다 안전하게 지원할 수 있는 방안이 필요한 실정이다. 본 논문에서는 State machine을 이용하여 이더리움 스마트 컨트랙트의 기능사용을 보다 안전하게 지원하기 위한 기법을 제안한다. 제안된 기법은 전체 동작의 흐름의 제어하기 위한 Transition Contract와 각각 상태에 대한 스마트 컨트랙트인 State Contract를 이용하여 스마트 컨트랙트의 동작과정을 제어한다.

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