• Electrical & Electronic Materials
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• v.3 no.2
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• pp.90-98
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• 1990

Y-Bi-Ba-Cu-O계 초전도체를 보통의 ceramic방법과 screen printing과 소결법으로 원판형과 후막형으로 제작하였다. B $i_{2}$ $O_{3}$를 첨가하여 소결한 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 초전도 성질은 전기저항측정과 자석위에 부상 유무로 조사하였다. 또한 B $i_{2}$ $O_{3}$를 첨가함에 따라 소결된 시편의 미세구조에 어떠한 영향을 주었는지 알아보았다. 전기저항 측정시 Yttrium 대신에 Bi로 부분적으로 치환한 경우인 $Y_{0.85}$B $i_{0.15}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 상온 저항치가 기본조성인 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 그것보다 향상된 미세구조로 인해 더 작은 값을 나타낸다. 반면 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$에다가 초과로 B $i_{2}$ $O_{3}$를 첨가한 경우 오히려 미세구조는 불량하고 상온저항치도 더 높다. 이러한 사실은 입계에 잔류하는 이차상은 전기적 성질에는 크게 영향을 주나 자기적 성질에는 거의 영향을 주지않는 것으로 보인다. 후막으로 Y-Bi-Ba-Cu-O를 제작시 기판에 의해 좌우되는데 단지 magnesia 기판에서 소결시 bulk시편과 유사한 성질을 나타냈다.질을 나타냈다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.942-945
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas was dimethylmethylphosphonate($C_3H_9O_3P$, DMMP) that is simulant gas of nerve gas. Sensing material was $SnO_2$ added ${\alpha}-Al_2O_3$ with $4{\sim}20wt.%$ and was physically mixed. And then it was deposited by screen printing method on alumina substrate. Sensor device was consisted of sensing electrode with interdigit(IDT) type in front and heater in back side. Total size of device was $7{\times}10{\times}0.6mm^3$. Crystallite size of fabricated $SnO_2$ were characterized by X-ray diffraction(XRD, Rigaku) and morphology of the $SnO_2$ powders was observed by a scanning electron microscope(SEM, Hitachi). Fabricated sensor was measured as flow type and sensor resistance change was monitored real time using LabVIEW program. The best conditions as added $Al_2O_3$ amounts and operating temperature changes were 4wt.% and $300^{\circ}C$ in DMMP 0.5ppm, respectively. The sensitivity was over 75%. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with ${\pm}3%$ in full scale.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.280-284
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• 2004

Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.12-16
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• 2011

In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.421-421
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• 2008

Generally, the polymer thick-film resistors for embedded organic or hybrid substrate are patterned by screen printing so that the accuracy of resistor pattern is not good and the tolerance of resistance is too high(${\pm}$20~30%). To reform these demerits, a method using Fodel$^{(R)}$ technology, which is the patterning method using a photosensitive resin to be developable by aqueous alkali-solution as a base polymer for thick-film pastes, was recently incorporated for the patterning of thermosetting thick-film resistor paste. Alkali-solution developable photosensitive resin system has a merit that the precise patterns can be obtained by UV exposure and aqueous development, so the essential point is to get the composition similar to PSR(photo solder resist) used for PCB process. In present research, we made the photopatternable resistor pastes using 8 kinds of epoxy acrylates and a conductive carbonblack (CDX-7055 Ultra), evaluated their developing performance, and then measured the resistance after final curing. To become developable by alkali-solution, epoxy acrylate oligomers with carboxyl group were prepared. Test coupons were fabricated by patterning copper foil on FR-4 CCL board, plating Ni/Au on the patterned copper electrode, applying the resistor paste on the board, exposing the applied paste to UV through Cr mask with resistor patterns, developing the exposed paste with aqueous alkali-solution (1wt% $Na_2CO_3$), drying the patterned paste at $80^{\circ}C$ oven, and then curing it at $200^{\circ}C$ during 1 hour. As a result, some test compositions couldn't be developed according to the kind of oligomer and, in the developed compositions, the measured resistance showed different results depending on the paste compositions though they had the same amount of carbonblack.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.51-51
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• 2008

Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.562-571
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• 2008

In this paper, we propose a novel structure of a spiral antenna with a CP characteristic for RFID reader in UHF band. Since the proposed antenna can be built by printing on a FR-4 substrate, it is appropriate for low-cost mass-production. The antenna is designed to operate in UHF band of $860{\sim}960$ MHz. The CP bandwidth is Increased enough to cover an overall UHF RFID band by using a spiral structure for the antenna arm. The matching bandwidth is broadened by using a quarter-wave transformer between the fred and the antenna body. The proposed antenna has advantages of its easy gain and pattern control with a small antenna size. The measured antenna performance shows the matching bandwidth of 13%, the CP bandwidth of 23%, and the gain of 6.5 dBi. This verifies that the proposed antenna is appropriate for RFID antennas in UHF band.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.261-264
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• 2017

$Ni_{0.79}Co_{0.15-x}Cu_xMn_{2.06}O_4$ ($0{\leq}x{\leq}0.09$) thick films were fabricated using the conventional solid-state reaction method and screen-printing method. Structural and electrical properties of specimens based on the amount of Cu were observed in order to investigate their applicability in the infrared detector. All specimens showed a single spinel phase with a homogeneous cubic structure. As the amount of Cu increased, the average grain size increased and was found to be approximately $5.01{\mu}m$ for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen. The thickness of all specimens was approximately $55{\sim}56{\mu}m$. As Cu content increased, the resistivity and TCR properties at room temperature decreased, and these values for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen were $502{\Omega}-cm$ and $-3.32%/^{\circ}C$, respectively. The responsivity and noise properties decreased with an increase in Cu content, with the specimen with a Cu content of x=0.09 showing 0.0183 V/W and $5.21{\times}10^{-5}V$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1217-1223
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is dimethyl methyl phosphonate(C$_3$ $H_{9}$ $O_3$P, DMMP) that is simulant gas of nerve gas. Sensing materials were Sn $O_2$ added a-Al$_2$ $O_3$ with 0∼20wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor device was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Total size of device was 7${\times}$10${\times}$0.6㎣. Crystallite size & phase identification and morphology of fabricated Sn $O_2$ powders were analyzed by X-ray diffraction and by a scanning electron microscope, respectively. Fabricated sensor was measured as flow type and resistance change of sensing material was monitored as real time using LabVIEW program. The best sensitivity was 75% at adding 4wt.% $\alpha$-Al$_2$ $O_3$, operating temperature 30$0^{\circ}C$ to DMMP 0.5ppm. Response and recovery time were about 1 and 3min., respectively. Repetition measurement was very good with $\pm$3％ in full scale.TEX>$\pm$3％ in full scale.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.105-110
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• 2011

The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.