• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.411-418
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• 2011

The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps $10\times10\times6$ ${\mu}m$ in size, with 20${\mu}m$ pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/$cm^2$ and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/$cm^2$ for 20 min, and the bump size at these conditions was $10\times10\times6$ ${\mu}m$. The shear strength of the eutectic Sn-Cu bump was 9.0 gf when the shearing tip height was 50% of the bump height.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.189-194
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• 2023

This study uses first-principles calculations to investigate the mechanical properties and effect of strain on the electronic properties of the 2D material 1H-PbX₂ (X: S, Se). Firstly, the stability of the 1H Pb-dichalcogenide structures was evaluated using Born's criteria. The obtained results show that the 1H-PbS₂ material possesses the greatest ideal strength of 3.48 N/m, with 3.68 N/m for 1H-PbSe₂ in biaxial strain. In addition, 1H-PbS₂ and 1H-PbSe₂ are direct semiconductors at equilibrium with band gaps of 2.30 eV and 1.90 eV, respectively. The band gap was investigated and remained almost unchanged under the strain ε_xx but altered significantly at strains ε_yy and ε_bia. At the fracture strain in the biaxial direction (19 %), the band gap of 1H-PbS₂ decreases about 60 %, and that of 1H-PbSe₂ decreases about 50 %. 1H-PbS₂ and 1H-PbSe₂ can convert from direct to indirect semiconductor under the strain ε_yy. Our findings reveal that the two structures have significant potential for application in nanoelectronic devices.

• Advances in nano research
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• v.15 no.3
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• pp.263-275
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• 2023

The electron transport properties of Y-type zigzag branched carbon nanotubes (CNTs) are of great significance for micro and nano carbon-based electronic devices and their interconnection. Based on the semi-empirical method combining tight-binding density functional theory and non-equilibrium Green's function, the electron transport properties between the branches of Y-type zigzag branched CNT are studied. The results show that the drain-source current of semiconducting Y-type zigzag branched CNT (8, 0)-(4, 0)-(4, 0) is cut-off and not affected by the gate voltage in a bias voltage range [-0.5 V, 0.5 V]. The current presents a nonlinear change in a bias voltage range [-1.5 V, -0.5 V] and [0.5 V, 1.5 V]. The tangent slope of the current-voltage curve can be changed by the gate voltage to realize the regulation of the current. The regulation effect under negative bias voltage is more significant. For the larger diameter semiconducting Y-type zigzag branched CNT (10, 0)-(5, 0)-(5, 0), only the value of drain-source current increases due to the larger diameter. For metallic Y-type zigzag branched CNT (12, 0)-(6, 0)-(6, 0), the drain-source current presents a linear change in a bias voltage range [-1.5 V, 1.5 V] and is symmetrical about (0, 0). The slope of current-voltage line can be changed by the gate voltage to realize the regulation of the current. For three kinds of Y-type zigzag branched CNT with different diameters and different conductivity, the current-voltage curve trend changes from decline to rise when the branch of drain-source is exchanged. The current regulation effect of semiconducting Y-type zigzag branched CNT under negative bias voltage is also more significant.

• Progress in Medical Physics
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• v.17 no.1
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• pp.47-53
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• 2006

The accuracy of the dosimetry in the Cyberknife system is accomplishing important role from all processes of the stereotactic radiosurgery. In this study, we estimated relative output factors for Cyberknife. All measurements were peformed by six different detectors: diode detector, X-Omat V film, Gafchromic EBT film, 0.015 cc, 0.125 cc and 0.6 cc ionization chamber The diode detector and three ionization chambers peformed using water phantom at 80 cm SSD and 1.5 cm depth. When the film measurements were peformed, the water phantom was replaced with a solidwater phantom. Each collimator normalized with respect to the output factor of the largest collimator (60 mm). For the collimators over than 30 mm, the output factors from the different detectors showed a good agreement within 0.5% except 0.6 cc ion chamber For the collimators less than 15 mm, there were substantial differences In the output factors among different detectors. That is, the value of output factor for the 5 mm collimator of a diode and Gafchromic film was each $0.656{\pm}0.009$ and $0.777{\pm}0.013$. In the ion chamber and diode detector, those difference were due to the presence of large dose gradients and lack of electronic equilibrium in narrow megavoltage x-ray beams Therefore, the Gafchromic EBT film were considered more accurate than the others detectors.

• Progress in Medical Physics
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• v.25 no.4
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• pp.218-224
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• 2014

The small field dosimetry is very important in modern radiotherapy because it has been frequently used to treat the tumor with high dose hypo-fractionated radiotherapy or high dose single fraction stereotactic radiosurgery (SRS) with small size target. But, the dosimetry of a small field (< $3{\times}3cm^2$) has been great challenges in radiotherapy. Small field dosimetry is difficult because of (a) a lack of lateral electronic equilibrium, (b) steep dose gradients, and (c) partial blocking of the source. The objectives of this study were to measure and verify with the various detectors the output factors in a small field (<3 cm) for the 6 MV photon beams. Output factors were measured using the CC13, CC01, EDGE detector, thermoluminescence dosimeters (TLDs), and Gafchromic EBT2 films at the sizes of field such as $0.5{\times}0.5$, $1{\times}1$, $2{\times}2$, $3{\times}3$, $5{\times}5$, and $10{\times}10cm^2$. The differences in the output factors with the various detectors increased with decreasing field size. Our study demonstrates that the dosimetry for a small photon beam (< $3{\times}3cm^2$) should use CC01 or EDGE detectors with a small active volume. And also, Output factors with the EDGE detectors in a small field (< $3{\times}3cm^2$) coincided well with the Gafchromic EBT2 films.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.109-114
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• 2000

The relation between the phase-shift profile fur the intermediate frequencies and the Langmuir adsorption isotherm at the poly-Ir/0.1 M $H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The simplified interfacial equivalent circuit consists of the serial connection of the electrolyte resistance $(R_s)$, the faradaic resistance $(R_F)$, and the equivalent circuit element $(C_P)$ of the adsorption pseudoca-pacitance $(C_\phi)$. The comparison of the change rates of the $\Delta(-\phi)/{\Delta}E\;and\;\Delta{\theta}/{\Delta}E$ are represented. The delayed phase shift $(\phi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$. The phase-shift profile $(-\phi\;vs.\;E)$ for the intermediate frequency (ca. 1 Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm $(\theta\;vs.\;E)$. The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-Ir/0.1 M $H_2SO_4$ electrolyte interface are $2.0\times10^{-4}$ and 21.1kJ/mol, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• Journal of the Korean Electrochemical Society
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• v.4 no.4
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• pp.146-151
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• 2001

The Frumkin adsorption isotherm of the over-potentially deposited hydrogen (OPD H) for the cathodic $H_2$ evolution reaction (HER) at the poly-Ni|0.05M KOH aqueous electrolyte interface has been studied using the phase-shift method. The behavior of the phase shift $(0^{\circ}\leq{\phi}\leq90^{\circ})$ for the optimum intermediate frequency corresponds well to that of the fractional surface coverage $(1\geq{\theta}\geq0)$ at the interface. The phase-shift method, i.e., the Phase-shift profile $(-{\phi}\;vs.\;E)$ for the optimum intermediate frequency, can be used as a new method to estimate the Frumkin adsorption isotherm $(\theta\;vs.\;E)$ of the OPD H for the cathodic HER at the interface. At the poly-Ni|0.05M KOH aqueous electrolyte interface, the rate (r) of change of the standard free energy of the OPD H with $\theta$, the interaction parameter (g) for the Frumkin adsorption isotherm, the equilibrium constant (K) for the OPD H with $\theta$, and the standard free energy $({\Delta}G_{\theta})$ of the OPD H with ${\theta}$ are $24.8kJ mol^{-1},\;10,\;5.9\times10^{-6}{\leq}K{\leq}0.13,\;and\;5.1\leq{\Delta}G_{\theta}\leq29.8kJ\;mol^{-1}$. The electrode kinetic parameters $(r,\;g,\;K,\;{\Delta}G_{\theta})$ depend strongly on ${\theta} (0{\leq}{\theta}{\leq}1)$.

• Journal of the Korean Electrochemical Society
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• v.9 no.1
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• pp.19-28
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• 2006

The phase-shift method for determining the Langmuir, Frumkin, and Temkin adsorption isotherms ($\theta_H\;vs.\;E$) of H for the cathodic $H_2$ evolution reaction (HER) at a Pt/0.1 M KOH solution interface has been proposed and verified using cyclic voltammetric, differential pulse voltammetric, and electrochemical impedance techniques. At the Pt/0.1 M KOH solution interface, the Langmuir and Temkin adsorption isotherms ($\theta_H\;vs.\;E$), the equilibrium constants ($K_H=2.9X10^{-4}mol^{-1}$ for the Langmuir and $K_H=2.9X10^{-3}\exp(-4.6\theta_H)mol^{-1}$ for the Temkin adsorption isotherm), the interaction parameters (g=0 far the Langmuir and g=4.6 for the Temkin adsorption isotherm), the rate of change of the standard free energy of $\theta_H\;with\;\theta_H$ (r=11.4 kJ $mol^{-1}$ for g=4.6), and the standard free energies (${\Delta}G_{ads}^{\circ}=20.2kJ\;mol^{-1}$ for $k_H=2.9\times10^{-4}mol^{-1}$, i.e., the Langmuir adsorption isotherm, and $16.7<{\Delta}G_\theta^{\circ}<23.6kJ\;mol^{-1}$ for $K_H=2.9\times10^{-3}\exp(-4.6\theta_H)mol^{-1}$ and $0.2<\theta_H<0.8$, i.e., the Temkin adsorption isotherm) of H for the cathodic HER are determined using the phase-shift method. At intermediate values of $\theta_H$, i.e., $0.2<\theta_H<0.8$, the Temkin adsorption isotherm ($\theta_H\;vs.\;E$) corresponding to the Langmuir adsorption isotherm ($\theta_H\;vs.\;E$), and vice versa, is readily determined using the constant conversion factors. The phase-shift method and constant conversion factors are useful and effective for determining the Langmuir, Frumkin, and Temkin adsorption isotherms of intermediates for sequential reactions and related electrode kinetic and thermodynamic data at electrode catalyst interfaces.

• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.14-20
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• 2001

The Langmuir adsorption isotherms of the under-potentially deposited hydrogen (UPD H) and the over-potentially deposited hydrogen (OPD H) at the single crystal Pt(100)/0.5 M $H_2SO_4$ and 0.5 M LiOH aqueous electrolyte interfaces have been studied using the phase-shift method. The phase-shift profile $({-\varphi}\;vs.\;E)$ for the optimum intermediate frequency can be used as a useful method to estimate the Langmuir adsorption isotherm $(\theta\;vs.\;E)$ at the interfaces. The equilibrium constant (K) for the OPD H and the standard free energy $({\Delta}G_{ads})$ of the OPD H at the Pt(100)/0.5M $H_2SO_4$ aqueous electrolyte interface are $1.5\times10^{-4}$ and 21.8 kJ/mol, respectively. At the Pt(100)/0.5 LiOH aqueous electrolyte interface, K transits from 1.9(UPD H) to $6.8\times10^{-6}$(OPD H) depending on the cathode potential (E) and vice versa. Similarly, ${\Delta}G_{ads}$ transits -1.6 kJ/mol (UPD H) to 29.5 kJ/mol (OPD H) depending on E and vice versa. The transition of K and ${\Delta}G_{ads}$ is attributed to the two distinct adsorption sites of the UPD H and OPD H on the Pt(100) surface. The UPD H and the OPD H at the Pt(100) interfaces are the independent processes depending on the H adsorption sites rather than the sequential processes for the cathodic $H_2$ evolution reactions.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.144-149
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• 1999

The two distinct adsorption sites and transition between the under and over-potentially deposited hydrogen (UPD H and OPD H) on the polycrystalline iridium (poly-Ir) surface in the 0.2 M LiOH electrolyte have been studied using the phase-shift method. At the forward and backward scans, the UPD H peak occurs on the cyclic voltam-mogram. The transition region on the phase-shift profile or the Langmuir adsorption isotherm occurs at ca. -0.80 to -0.95 V vs. SCE. At the transition region (-0.80 to -0.95 V vs. SCE), the equilibrium constant (K) for H adsorption transits from $7.9\times10^{-2}\;to\;1.5\times10^{-4}$ and vice versa. Similarly, the standard free energy $({\Delta}G_{ads})$ of H adsorption transits from 6.3 to 21.8kJ/mol and vice versa. The UPD H and OPD H on the poly-Ir surface act as two distinguishable electroadsorbed H species. Both the UPD H peak and the transition region are attributed to the two distinct adsorption sites of the UPD H and OPD H on the poly-Ir surface.