• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.330-333
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• 1999

A Schottky characteristic is one of the important properties to determine the performance of GaN electronic devices. In this paper, we have studied how to improve the property after n$^{+}$ layer etching by ICP(Induced Coupled Plasma)-RIE(Reactive ion Etching). We have tried $N_2$radiation, annealing after $N_2$radiation, and annealing in $N_2$environment. We have found that a simple annealing method in $N_2$environment is enough to improve the Schottky characteristic for electronic device-Quality application.n.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.80-84
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• 2000

High temperature superconductor shows a good electric and magnetic properties and is known as a good candidate in various electronic device application. At present the technique to construct multilayers composed of HTS films and insulator films has not been fully studied in domestic research institutes. Since the construction of any reasonable eletronic devices require the use of multilayers, the development of HTS eletronic devices has been limited. To manufacture multiplayer, several processing steps which involve deposition and ion millings are required. To manufacture a good quality multilayerd structure, not only the deposition techniques but also the proper patterning have to be developed. In this work, we have fabricated a YBCO/STO/YBCO multiplayer and studied the electronic properties of it.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.1-5
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• 2005

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.257-262
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• 2007

Organic light-emitting diodes (OLEDs) with the high efficieney and long lifetime are of growing interest in next-generation displays. Among the factors influencing OLEDs properties, one of unstable factor is $Alq_3$ cationic species caused by the excess holes resided in $Alq_3$ layer. Therefore, we suppressed the accumulation of excess holes by using the mixed-hole transporting layer (MHTL) of NPB and CBP in multilayer green OLEDs. The devices with MHTL showed improved characteristics in the luminous efficiency and lifetime. More characteristics and the carrier transport mechanism will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.197-201
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• 2007

The accelerated aging test equipment which is possible to apply voltage and temperature at the same time, is fabricated to predict lifetime of high capacity thyristor in short time. The variations of the forward/reverse breakdown voltage and the leakage current are investigated as an aging diagnostic tool. Lifetimes of the devices which are predicted from the reverse breakdown voltage with an accelerated aging time, have shown 3-15 years.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1665-1666
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• 2008

There are three main devices such as boiler producing steam, turbine driving generator and generator producing electricity. An electrical generator in power plant is driven and maintained its speed at rated by steam turbine which is coupled into generator directly. Therefore after the steam turbine reaches its rated speed and the generator gets into parallel operation with power grid, the electrical power can be increased by turbine controller or governor. The first governor was invented by James Watts for the steam engine to be maintained at a constant speed. The first governor by him was mechanical type with fly balls. The electrical type governor was created due to the progress of electronic devices such as operational amplifiers or integrated circuits. and Today digital electronic type of governor is being widely used in most prime movers.

• Vacuum Magazine
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• v.1 no.2
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• pp.24-29
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• 2014

Display is a key component in electronic devices. OLED is growing very fast recently due to the explosion of the smart phone market although still LCD is the dominating display technology in the display market at the moment. Also needs for the large area and high resolution TVs and flexible displays are increasing these days. Especially flexible display is expected to be one of the key technologies in mobile devices requiring small device size and large display size. Contrary to the conventional displays, flexible display requires organic materials for the substrate, the active driving element and also for the display element. Plastic film as a substrate, organic semiconductor as an active component of the transistor and organic light emitting materials or electronic paper as a display element are studied actively. In this article, mainly backplane technologies such as substrates and the transistor materials for flexible display will be introduced.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.866-871
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• 2003

In automobile, the introduction of electronically commutated motors has been accompanied by a proliferation of electronic devices. With this proliferation of electronic devices, an emphasis has been placed on EMC issues. This paper is proposed to use SRM as a radiator cooling fan in automotive applications. To drive SRM, Energy efficient C-dump converter is applied. It is verified more efficient than other converters through simulation and experiments. And also SRM is valid automotive applications that have strict EMC standards. It is compared SRM with BLDC and DC motor by experiments.