• Title/Summary/Keyword: Electronic devices

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Thermal Emission Effect of Electronic Parts Using Carbon Materials (탄소물질을 이용한 전자부품의 열 방출효과)

  • Eom, Woon-Yong;Roh, Jae-Seung;Seo, Seung-Kuk;Ahn, Jai-Sang;Kang, Dong-Su;Kim, Suk-Hwan
    • Korean Journal of Materials Research
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    • v.20 no.4
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    • pp.204-209
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    • 2010
  • Recent high efficiency electronic devices have been found to have heat emission problems. As for LEDs, an excessive increase in the device temperature causes a drop of the luminous efficiency and circuit lifetime. Therefore, heat release in the limited space of such electronic parts is very important. This is a study of the possibility of using a coating of carbon materials as a solution for the thermal emission problem of electronic devices. Powdered carbon materials, cokes, carbon blacks, amorphous graphite, and natural flakes were coated with an organic binder on an aluminum sheet and the subsequent thermal emissivity was measured with an FT-IR spectrometer and was found to be in the range of $5{\sim}20\;{\mu}m$ at $50^{\circ}C$. The emissivity of the carbon materials coated on the aluminum sheet was shown to be over 0.8 and varied according to carbon type. The maximum thermal emissivity on the carbon black coated-aluminum surface was shown to be 0.877. The emissivity of the anodized aluminum sheets that were used as heat releasing materials of the electronic parts was reported to be in the range of 0.7~0.8. Therefore, the use of a coating of carbon material can be a potential solution that facillitates heat dissipation for electronic parts.

Effects of $SiO_2$ or SiON tunneling gate oxide on Au nano-particles floating gate memory (Au 나노 입자를 이용한 floating gate memory에서 $SiO_2$ or SiON 터널링 게이트 산화막의 영향)

  • Koo, Hyun-Mo;Lee, Woo-Hyun;Cho, Won-Ju;Koo, Sang-Mo;Chung, Hong-Bay;Lee, Dong-Uk;Kim, Jae-Hoon;Lee, Min-Seung;Kim, Eun-Kyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.67-68
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    • 2006
  • Floating gate non-volatile memory devices with Au nano-particles embedded in SiON or $SiO_2$ dielectrics were fabricated by digital sputtering method. The size and the density of Au are 4nm and $2{\times}10^{-12}cm^{-2}$, respectively. The floating gate memory of MOSFET with 5nm tunnel oxide and 45nm control oxide have been fabricated. This devices revealed a memory effect which due to proGrainming and erasing works perform by a gate bias stress repeatedly.

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Heart Rate Monitoring Using Motion Artifact Modeling with MISO Filters (MISO 필터 기반의 동잡음 모델링을 이용한 심박수 모니터링)

  • Kim, Sunho;Lee, Jungsub;Kang, Hyunil;Ohn, Baeksan;Baek, Gyehyun;Jung, Minkyu;Im, Sungbin
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.8
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    • pp.18-26
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    • 2015
  • Measuring the heart rate during exercise is important to properly control the amount of exercise. With the recent advent of smart device usage, there is a dramatic increase in interest in devices for the real-time measurement of the heart rate during exercise. During intensive exercise, accurate heart rate estimation from wrist-type photoplethysmography (PPG) signals is a very difficult problem due to motion artifact (MA). In this study, we propose an efficient algorithm for an accurate estimation of the heart rate from wrist-type PPG signals. For the twelve data sets, the proposed algorithm achieves the average absolute error of 1.38 beat per minute (BPM) and the Pearson correlation between the estimates and the ground-truth of heart rate was 0.9922. The proposed algorithm presents the strengths in an accurate estimation together with a fast computation speed, which is attractive in application to wearable devices.

Directional Alignment and Printing of One Dimensional Nanomaterials Using the Combination of Microstructure and Hydrodynamic Force (마이크로 구조 및 동유체력을 이용한 나노와이어 미세 정렬 및 프린팅 기법)

  • Chung, Yongwon;Seo, Jungmok;Lee, Sanggeun;Kwon, Hyukho;Lee, Taeyoon
    • Korean Journal of Materials Research
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    • v.23 no.10
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    • pp.586-591
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    • 2013
  • The printing of nanomaterials onto certain substrates is one of the key technologies behind high-speed interconnection and high-performance electronic devices. For the printing of next-generation electronic devices, a printing process which can be applied to a flexible substrate is needed. A printing process on a flexible substrate requires a lowtemperature, non-vacuum process due to the physical properties of the substrate. In this study, we obtained well-ordered Ag nanowires using modified gravure printing techniques. Ag nanowires are synthesized by a silver nitrate ($AgNO_3$) reduction process in an ethylene glycol solution. Ag nanowires were well aligned by hydrodynamic force on a micro-engraved Si substrate. With the three-dimensional structure of polydimethylsiloxane (PDMS), which has an inverse morphology relative to the micro-engraved Si substrate, the sub-micron alignment of Ag nanowires is possible. This technique can solve the performance problems associated with conventional organic materials. Also, given that this technique enables large-area printing, it has great applicability not only as a next-generation printing technology but also in a range of other fields.

Characteristics of ZnO thin films by RF magnetron sputtering for FBAR application (RF 마그네트론 스퍼터링을 이용한 FBAR 소자용 ZnO 박막의 특성)

  • Kim, S.Y.;Lee, N.H.;Kim, S.G.;Park, S.H.;Jung, M.G.;Shin, Y.H.;Ji, S.H.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1523-1525
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    • 2003
  • Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

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Laser Fabrication of Graphene-based Materials and Their Application in Electronic Devices (레이저 유도에 의한 그래핀 합성 및 전기/전자 소자 제조 기술)

  • Jeon, Sangheon;Park, Rowoon;Jeong, Jeonghwa;Hong, Suck Won
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.1
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    • pp.1-12
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    • 2021
  • Here, we introduce a laser-induced graphene synthesis technology and its applications for the electric/electronic device manufacturing process. Recently, the micro/nanopatterning technique of graphene has received great attention for the utilization of these new graphene structures, which shows progress developments at present with a variety of uses in electronic devices. Some examples of practical applications suggested a great potential for the tunable graphene synthetic manners through the control of the laser set-up, such as a selection of the wavelength, power adjustment, and optical techniques. This emerging technology has expandability to electric/electronic devices combined together with existed micro-packaging technology and can be integrated with the new processing steps to be applied for the operation in the fields of biosensors, supercapacitors, electrochemical sensors, etc. We believe that the laser-induced graphene technology introduced in this paper can be easily applied to portable small electronic devices and wearable electronics in the near future.

Recent Trends of MEMS Packaging and Bonding Technology (MEMS 패키징 및 접합 기술의 최근 기술 동향)

  • Choa, Sung-Hoon;Ko, Byoung Ho;Lee, Haeng-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.4
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    • pp.9-17
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    • 2017
  • In these days, MEMS (micro-electro-mechanical system) devices become the crucial sensor components in mobile devices, automobiles and several electronic consumer products. For MEMS devices, the packaging determines the performance, reliability, long-term stability and the total cost of the MEMS devices. Therefore, the packaging technology becomes a key issue for successful commercialization of MEMS devices. As the IoT and wearable devices are emerged as a future technology, the importance of the MEMS sensor keeps increasing. However, MEMS devices should meet several requirements such as ultra-miniaturization, low-power, low-cost as well as high performances and reliability. To meet those requirements, several innovative technologies are under development such as integration of MEMS and IC chip, TSV(through-silicon-via) technology and CMOS compatible MEMS fabrication. It is clear that MEMS packaging will be key technology in future MEMS. In this paper, we reviewed the recent development trends of the MEMS packaging. In particular, we discussed and reviewed the recent technology trends of the MEMS bonding technology, such as low temperature bonding, eutectic bonding and thermo-compression bonding.

Study on the characteristics of white organic light-emitting diodes using a new material

  • Shim, Hye-Yeon;Jeong, Ji-Hoon;Kwon, Hyuk-Joo;Cho, Young-Jun;Kim, Bong-Ok;Kim, Sung-Min;Kim, Chi-Sik;Yoon, Seung-Soo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.688-691
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    • 2004
  • In this study, we synthesized a new red emitting material of a Red225 doped into $Alq_3$ (tris(8-quinolinolato)aluminum (III)) and fabricated white organic light-emitting diodes (OLEDs) with a simple device structure. With a blue emitting material of DPVBi (4,4'-bis(2,2'-diphenylvinyl)1,1'-biphenyl) that can transfer effectively both a hole and an electron, OLEDs with a narrow emission layer could be possible without a hole-blocking layer. Consequently, the driving voltage and stability of devices have been improved. The devices show the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.35) at luminance of 2000 cd/$m^2$. The luminous efficiency is about 3.5 cd/A, luminance is about 12000 cd/$m^2$ and current density is about 350 mA/$cm^2$ at 12 V, respectively.

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Selective control of multiple devices via finger recognition (다중 디바이스에서 손 인식을 통한 선택적 제어)

  • Chang, Ho-Jung;Kim, Tae-Hyun;Yoon, Youngmi
    • Journal of Korea Multimedia Society
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    • v.17 no.1
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    • pp.60-68
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    • 2014
  • Extensive researches on PC control system via interaction between PC and users are being conducted recently, especially on human finger recognition in the electronic devices. Heretofore, researches on methods to improve the accuracy of finger recognition in a single device and to control the devices with it have been the mainstream, whereas many different industries where finger recognition become more utilized are demanding researches on methods to selectively control the system of multiple devices for applications in various environments and situations. This article demonstrates attempts to selectively control one of two devices through finger recognition. Along with this, experiments conducted with 6 variable conditions are demonstrated here, where the optimal condition to increase the rate of successful selective finger recognition between two devices is studied.

The Optimization of Efficient White Organic Light-Emitting Diodes Using a Blue Fluorescent and a Red Phosphorescent Dopant

  • Seo, Ji-Hoon;Kim, Jun-Ho;Seo, Ji-Hyun;Hyung, Gun-Woo;Park, Jung-Hyun;Lee, Kum-Hee;Yoon, Seung-Soo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1470-1473
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    • 2007
  • We have demonstrated the optimization of white organic light-emitting diodes with two separated emissive layers using a blue fluorescent and a red phosphorescent dopant. The maximum luminous efficiency of the devices showed 7.93, 9.70, 11.8, and 14.3 cd/A. The $CIE_{xy}$ coordinates also showed (x = 0.33, y = 0.36), (x = 0.33, y = 0.35), (x =0.31, y = 0.35), and (x = 0.29, y = 0.36) at 6V, respectively.

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