• Journal of the Korean Applied Science and Technology
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• v.36 no.4
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• pp.1253-1258
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• 2019

The solid-state electrolyte based on polymer is applicable to various electrochemical devices including supercapacitor, battery, sensor, actuator and has great attention to develop its ionic conductivity from conventional polymer electrolyte by uisng wide range of ionic liquids. The research about ion gel as a solid state electrolyte with the ionic liquid has focused on the wearable and flexible electronic device to use as the high electrical and electrochemical performances, mechanical strength of polymer. In this work, we have investigated and developed solid-state electrolyte based on the ionic liquid and polymer with enhanced ionic conductivity and stability.

• Polymer(Korea)
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• v.25 no.3
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• pp.399-405
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• 2001

Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]s were synthesized in 2:1, 1:1, and 1:2 mole ratios, and organic electroluminescent devices were fabricated using the copolymers. The opto-electrical properties of the copolymers were studied by PL, EL spectra, I-V, and V-L curves of the organic electroluminescent devices in conjunction with the energy band diagrams which were obtained from the cyclic voltammogram and the electronic absorption spectra. The LUMO energy level of P(OT/FPT)(1:1) is the lowest as -3.35 eV. In the copolymers P(OT/FPT)(2:1) and P(OT/FPT)(1:1) the ${\lambada}_{max}$ in the PL and EL spectra red-shifted as the mole ratio of fluorophenyl group increased while in P(OT/FPT)(1:2) it showed a blue-shift. This indicates that the backbone chain is twisted due to the steric hinderance of the fluorophenyl group leading to shorter ${\pi}$-conjugation length. P(OT/FPT)(1:1) showed the highest EL intensity and the highest power efficiency among the three copolymers. In P(OT/FPT)(1:2) the roughness of the film surface causes unusually high local leakage current leading to the low efficiency of electroluminescence.

• Journal of the Korean Society of Marine Environment & Safety
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• v.25 no.6
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• pp.802-808
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• 2019

DC motors are used extensively on shipboard, including as the ship's winch operating motor, owing to their simple speed control and excellent output torque characteristics. Moreover, they were used as propulsion motors in the early days of electric propulsion ships. However, mechanical rectifiers, such as brushes, used in DC motors have certain disadvantages. Hence, brushless DC (BLDC) motors are increasingly being used instead. While the electrical characteristics of both types of motors are similar, BLDC motors employ electronic rectifying devices, which use semiconductor elements, instead of mechanical rectifying devices. The inverter system for driving conventional BLDC motors uses a two-phase excitation method so that the waveform of the back electromotive force becomes trapezoidal. This causes harmonics and torque ripple in the phase current switching period in which the winding wire through which the current flows is changed. Researchers have studied and presented various methods to reduce the harmonics and torque ripple. This study applies a cascaded H-bridge multilevel inverter, which implements a proportional-integral speed current controller algorithm in the driving circuit of the BLDC motor for electric propulsion ships using a power analysis program. The simulation results of the modeled BLDC motor show that the driving method of the proposed BLDC motor improves the voltage waveform of the input side of the motor and remarkably reduces the harmonics and torque ripple compared with the conventional driving method.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.1 s.307
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• pp.45-52
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• 2006

In this paper, authors propose a step-up converter of pulse width modulation (PWM) and power factor correction (PFC) by using a novel loss-less snubber. The proposed converter for a discontinuous conduction mode (DCM) eliminates the complicated circuit control requirement and reduces the size of components. The input current waveform in the proposed converter is got to be a sinusoidal form of discontinuous pulse in proportion to magnitude of ac input voltage under the constant duty cycle switching. Thereupon, the input power factor is nearly unity and the control method is simple. In the general DCM converters, the switching devices are fumed-on with the zero current switching (ZCS), and the switching devices must be switched-off at a maximum reactor current. To achieve a soft switching (ZCS and ZVS) of the switching turn-off, the proposed converter is constructed by using a new loss-less snubber which is operated with a partial resonant circuit. The result is that the switching loss is very low and the efficiency of converter is high. Some simulative results on computer and experimental results are included to confirm the validity of the analytical results.

• 한국HCI학회:학술대회논문집
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• 2008.02b
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• pp.131-135
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• 2008

Nowadays various information devices using electronic technology has been released. And these digital devices will be continuously developed to make a satisfaction of customer's needs. So digital device will support network service using communication technology, so users will use the internet service anywhere, anytime. Also the networked device which is used in ubiquitous computing environment should be evaluated by new evaluation framework. Therefore previous usability evaluation framework need to reflect the characteristics of ubiquitous computing. However most of pervious research about ubiquitous computing was about conceptual issues like rules and characteristics of ubiquitous computing, so the research of usability testing and evaluation method for ubiquitous computing is rarely conducted. This research's purpose is developing the evaluation framework for ubiquitous computing device and usability model for ubiquitous computing. To develop the evaluation framework, we collect the evaluation indexes which have need used in GUI evaluation And we extract evaluation indexes for ubiquitous computing based on literature review.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.2
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• pp.219-226
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• 2010

The stamping process is widely used in fabricating various sheet-parts for vehicle, airplane, and electronic devices due to its low processing cost and high productivity. Recently the use of thin sheets with corrugated structures has rapidly increased for the production of energy devices, e.g., heat exchangers and fuel cells. However, it is very difficult to make corrugated structures directly in the stamping process due to their geometrical complexity. To solve this problem, this paper proposes a multi-step stamping process with a combined heat treatment process: a sequence of the first stamping, heat treatment, and second stamping. By multi-stamping, we obtained successful results in fabricating very thin corrugated structures with thicknesses of $100{\mu}m$; these are applicable as part of a plate-type heat exchanger.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.1
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• pp.69-76
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• 2017

Bluetooth Low Energy (BLE), also known as Bluetooth Smart, has ultra-low power consumption; in fact, BLE-enabled devices can run on a single coin cell battery for several years. In addition, BLE can estimate the approximate distance between two devices using the Received Signal Strength Indication (RSSI) feature, enabling relatively precise navigation in indoor and small outdoor areas where GPS is not an option. In this paper, an experimental setup is presented in which BLE is used for navigation within a small outdoor area. BLE-based beacons are installed in fixed positions, which periodically transmit a universally unique identifier (UUID). A smart device receives the UUID and sends it to a database server using cellular or Wi-Fi technology. The server returns fixed position information corresponding to the received UUID codes, and the smart device uses that information to compute its current position based on relative signal strengths, and display it on a map. These results demonstrate the successful application of BLE technology for navigation in small outdoor areas. This system can be implemented for indoor navigation as well.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.49 no.4
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• pp.58-66
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• 2012

Currently many devices reproduce electronic images in the various ways. However, the color that is reproduced in any device is different from the original color due to the differences in the gamut between devices. A recent trend in gamut mapping algorithms is the use of spatial information to compute the color transformation of pixels from the input to the output gamut. However, these techniques share the problem of preserving details, and avoiding halos, and hue shift. In this paper, spatial gamut mapping for preserving the details of the input image is proposed. Our approach improves visibility of detail that is not effectively represented with conventional spatial gamut mapping. In proposed method, initially, we gamut map the input image using gamut clipping and obtain a detail layer for both the input and the gamut mapped images. Next, we calculate the difference between the two detail layers, obtaining the details of the out of gamut region. Finally, we add the details of out of gamut region to the gamut mapped image. Since the resulting image has out of gamut colors, we obtain resulting image of proposed method by using a gamut clipping method. Consequently, the printed output image was more consistent with the corresponding monitor image.

• Journal of IKEEE
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• v.18 no.4
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• pp.544-551
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• 2014

This paper suggests an algorithm to measure low-level radiation by radiation measuring devices, and the other algorithm to improve reaction speed of the device to better respond to dramatic changes in radiation amount. The former algorithm to improve the accuracy of measuring low-level radiation takes advantage of a dual window radiation measurement method which is based on accumulated average of pulses gathered by a radiation measuring sensor. The latter algorithm is to enhance reaction speed of a measuring device to more sensitively react to dramatic changes in radiation amount by adopting a dual window radiation measurement method which analyzes data patterns newly put into for six seconds. To verify the suggested algorithms, a hardware-which consists of sensor and high-voltage generator, controller, charger and power supply circuit, wireless communication part, and display part-was used. Tests conducted on the dual window radiation measurement method as used in the suggested algorithm have proved that accuracy improves to measure low-level radiation of 5uSv/h, and linearity also gets better. Other tests were conducted to see whether the suggested algorithm enhances the reaction speed of a radiation measuring device so that the device responds better to dramatically changing radiation amount. The experimental results have shown meaningful changes in numbers after six seconds. Therefore, the conclusions are made that the algorithm enhances the reaction speed of the device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.