• Title/Summary/Keyword: Electronic devices

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Molybdenum Oxides as Diffusion Barrier Layers against MoSe2 Formation in A Nonvacuum Process for CuInSe2 Solar Cells (비진공법 CuInSe2 태양전지에서 MoSe2의 생성을 억제하기 위한 산화 몰리브데늄 확산장벽 층)

  • Lee, Byung-Seok;Lee, Doh-Kwon
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.85-90
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    • 2015
  • Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

Development of an Inexpensive Black Box with Transmission of SOS and Theft Signal for an Agricultural Tractor (도난방지 및 구조신호 전송기능이 있는 저가형 농용트랙터 블랙박스 개발)

  • Kim, YuYong;Shin, Seung-Yeoub;Kim, Byounggap;Kim, Hyung Kweon;Cho, Yongho;Kim, Jinoh
    • Journal of Biosystems Engineering
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    • v.37 no.6
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    • pp.352-358
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    • 2012
  • Purpose: The inexpensive black box system was developed to acquire and save driving information, to give the slope information, and to transmit SOS and theft signal. Method: The device consists of a main micro controller to acquire and save data, a GPS sensor module, a CDMA module, a touch LCD module, a RF (Radio Frequency) ID module, a SD (Secure Digital) card module, an emergency electric power source, a theftproof circuit, and a sensing device. The sensing device consists of a 8 bit micro controller, a accelerometer to detect impulse, two slope sensors to detect roll and pitch angle and a circuit to detect operation of 6 lighting devices. Results: Test results are as follows: 1) a tractor can be start up only with an electronic key (password or RFID card), 2) theft signal was transmitted when a tractor moved without an electronic key, 3) SOS was transmitted at conditions that rollover or crash happened. 4) 5 more than per 1s data are recorded at 5 minute intervals as new file name in SD card. Conclusions: This system can be used to save travelling record, reduce accident, prevent theft and rescue life in the accidents.

Thin Film Multijunction Thermal Converter for Low Input Voltage with Low Frequency (저주파수 및 저입력전압용 박막형 다중접합 열전변환기)

  • Hwang, Chan-Soon;Lee, Hyung-Ju;Kim, Jin-Sup;Lee, Jung-Hee;Park, Se-Il;Kwon, Sung-Won
    • Journal of Sensor Science and Technology
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    • v.11 no.3
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    • pp.145-154
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    • 2002
  • NiCr-heaters with three different thicknesses ranging from 400 nm to 800 nm were fabricated and their characteristics were compared for the purpose of developing a chromel-alumel multijunction thermal converter for low input voltage with low frequency. The thermoelectric effect-induced AC-DC voltage transfer difference of the thermal converter with a built-in NiCr-heater of 400 nm-thickness was ${\pm}0.51{\sim}1.69\;ppm$ in the DC reversing frequency of $40\;Hz{\sim}10\;kHz$ with appling $0.5\;V_{rms}$ and the difference was increased to ${\pm}40{\sim}{\pm}115\;ppm$ in the frequency of $40\;Hz{\sim}1\;MHz$, when both thermoelectric effects and frequency effects were considered, showing the thermal converter would be suitable for the low input voltage application with low frequency.

2D Adjacency Matrix Generation using DCT for UWV Contents (DCT를 통한 UWV 콘텐츠의 2D 인접도 행렬 생성)

  • Xiaorui, Li;Kim, Kyuheon
    • Journal of Broadcast Engineering
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    • v.22 no.3
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    • pp.366-374
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    • 2017
  • Since a display device such as TV or digital signage is getting larger, the types of media is getting changed into wider view one such as UHD, panoramic and jigsaw-like media. Especially, panoramic and jigsaw-like media is realized by stitching video clips, which are captured by different camera or devices. However, a stitching process takes long time, and has difficulties in applying for a real-time process. Thus, this paper suggests to find out 2D Adjacency Matrix, which tells spatial relationships among those video clips in order to decrease a stitching processing time. Using the Discrete Cosine Transform (DCT), we convert the each frame of video source from the spatial domain (2D) into frequency domain. Based on the aforementioned features, 2D Adjacency Matrix of images could be found that we can efficiently make the spatial map of the images by using DCT. This paper proposes a new method of generating 2D adjacency matrix by using DCT for producing a panoramic and jigsaw-like media through various individual video clips.

Prognostics and Health Management for Battery Remaining Useful Life Prediction Based on Electrochemistry Model: A Tutorial (배터리 잔존 유효 수명 예측을 위한 전기화학 모델 기반 고장 예지 및 건전성 관리 기술)

  • Choi, Yohwan;Kim, Hongseok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.42 no.4
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    • pp.939-949
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    • 2017
  • Prognostics and health management(PHM) is actively utilized by industry as an essential technology focusing on accurately monitoring the health state of a system and predicting the remaining useful life(RUL). An effective PHM is expected to reduce maintenance costs as well as improve safety of system by preventing failure in advance. With these advantages, PHM can be applied to the battery system which is a core element to provide electricity for devices with mobility, since battery faults could lead to operational downtime, performance degradation, and even catastrophic loss of human life by unexpected explosion due to non-linear characteristics of battery. In this paper we mainly review a recent progress on various models for predicting RUL of battery with high accuracy satisfying the given confidence interval level. Moreover, performance evaluation metrics for battery prognostics are presented in detail to show the strength of these metrics compared to the traditional ones used in the existing forecasting applications.

A Study on the Electrical Characteristics of Ultra Thin Gate Oxide

  • Eom, Gum-Yong
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.5
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    • pp.169-172
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    • 2004
  • Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ~ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes (고온 열처리 공정이 탄화규소 쇼트키 다이오드 특성에 미치는 영향)

  • Cheong, Hui-Jong;Bahng, Wook;Kang, In-Ho;Kim, Sang-Cheol;Han, Hyun-Sook;Kim, Hyeong-Woo;Kim, Nam-Kyun;Lee, Yong-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.9
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    • pp.818-824
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    • 2006
  • The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

The Comparison of Electric Characteristics of Radiation Detective Sensor(a-Se) with changing composition ratio of Arsenic (Arsenic의 첨가량에 따른 방사선 검출센서 (a-Se)의 전기적 특성 비교)

  • Seok, Dae-Woo;Kang, Sang-Sik;Lee, Dong-Gil;Kim, Jae-Hyung;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.391-394
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    • 2002
  • There has recently been much interest and research in developing digital x-ray systems based on using amorphous selenium(a-Se) photoconductors as the image receptor. The amorphous selenium layer that is currently being studied for use as an x-ray photoconductor is not pure a-Se but rather amorphous selenium alloyed with arsenic. We fabricated samples using the selenium and arsenic alloy with various concentrations of the arsenic. In this work, x-ray photoconductor using amorphous selenium alloyed with arsenic were fabricated with different concentrations of the arsenic (0.1 wt.%, 0.3wt.%, 0.5wt.%, 1wt.%, 1.5wt.%, 3wt.%, 5wt.%). The seven kind of samples was fabricated with a-Se alloyed with arsenic through vacuum thermal evaporation. We also investigate the arsenic concentration dependence on the device performance in radiation detector. The electric characteristics of radiation detector devices with changing additive ratio of the arsenic is performed by measuring the x-ray induced photocurrent and integrating it over time to find the total charge. The thickness of a-Se is $100{\mu}m$. Bias voltages $3V/{\mu}m$, $6V/{\mu}m$$9V/{\mu}m$ are applied at the samples. As results, the net charge of a-Se 0.3% As sample is $526.0pC/mR/cm^2$ at $9V/{\mu}m$ bias. The net charge is decreased as with the increasing additive ratio of arsenic.

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An multiple energy harvester with an improved Energy Harvesting platform for Self-powered Wearable Device (웨어러블 서비스를 위한 다중 발전소자 기반 에너지 하베스터 플랫폼 구현)

  • Park, Hyun-Moon;Kim, Byung-Soo;Kim, Dong-Sun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.13 no.1
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    • pp.153-162
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    • 2018
  • The importance of energy harvesting technique is increasing due to the elevated level of demand for sustainable power sources for wearable device applications. In this study, we developed an Energy Harvesting wearable Platform(EH-P) architecture which is used in the design of a multi-energy source based on TENG. The proposed switching circuit produces power with higher current at lower voltage from energy harvesting sources with lower current at higher voltage. This can powers microcontrollers for a short period of time by using PV and TENG complementarily placed under hard conditions for the sources such as indoors. As a result, the whole interface circuit is completely self-powered with this makes it possible to run of sensing on a Wearable device platform. It was possible to increase the wearable device life time by supplying more than 29% of the power consumption to wearable devices. The results presented in this paper show the potential of multi-energy harvesting platform for use in wearable harvesting applications, provide a means of choosing the energy harvesting source.

An Analysis System Using Big Data based Real Time Monitoring of Vital Sign: Focused on Measuring Baseball Defense Ability (빅데이터 기반의 실시간 생체 신호 모니터링을 이용한 분석시스템: 야구 수비능력 측정을 중심으로)

  • Oh, Young-Hwan
    • The Journal of the Korea institute of electronic communication sciences
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    • v.13 no.1
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    • pp.221-228
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    • 2018
  • Big data is an important keyword in World's Fourth Industrial Revolution in public and private division including IoT(Internet of Things), AI(Artificial Intelligence) and Cloud system in the fields of science, technology, industry and society. Big data based on services are available in various fields such as transportation, weather, medical care, and marketing. In particular, in the field of sports, various types of bio-signals can be collected and managed by the appearance of a wearable device that can measure vital signs in training or rehabilitation for daily life rather than a hospital or a rehabilitation center. However, research on big data with vital signs from wearable devices for training and rehabilitation for baseball players have not yet been stimulated. Therefore, in this paper, we propose a system for baseball infield and outfield players, especially which can store and analyze the momentum measurement vital signals based on big data.