• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.11
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• pp.6821-6829
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• 2014

The use of semiconductor devices as a component of eco-friendly motor vehicles has increased and their widespread use as high voltage switches is expected. On the other hand, in the case of high-voltage switches, reliability test equipment is not localized. To test high voltage switches, this paper analyzed the relevant test standards for developing power supplies. In particular, for the automotive semiconductor reliability test, the AEC (Automotive Electronic Council) Q101 was analyzed. Based on that, the standard specifications of the power supply were determined. For the main power circuit, the pull bridge converter was adopted and based on the specification, the circuit parameters were determined and verified by simulation. The interface for the parallel and pattern operation was designed. The characteristics of the power supply were tested.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.12
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• pp.6434-6440
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• 2013

In this paper, an integrated control system is proposed for automatic control and remote monitoring of pipeline type UV sterilizer. The proposed system can control the cleaning wiper in the sterilizer with various cleaning motions, and periodically check the contamination level of the UV lamps with the UV power sensors. Therefore, sterilizer repair and maintenance can be more effectively done. In addition, the control system based on the open-source processor can communicate with external smart devices via Bluetooth, and thus wirelessly exchange control commands and sensor data. Furthermore, the system is able to flexibly cope with changes of cleaning motions and sensors since its firmware can be wirelessly upgraded by using the smart device. Consequently, the proposed system is suitable to construct a smart sewage treatment system in small towns.

• Journal of Advanced Navigation Technology
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• v.19 no.5
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• pp.395-402
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• 2015

This paper introduces the design details and test procedures of the lightning induced transient protection device for protecting the damage caused by indirect lightning strike on the computer mounted on the aircraft. Lightning induced surge voltage is bring a malfunction or damage to the aircraft electrical and electronic equipment, that is referred to indirect effects of lightning. In order to protect the electronic equipment on aircraft from the indirect effects of lightning, that is achieved by analyzing the effect on aircraft from lightning and protect design for each devices. In this paper, we introduce an indirect lightning strike level decisions, the protection circuit design method according to the chosen level through the RTCA DO-160G Section 22 category analysis and selection was performed in order to protect the damage caused by indirect lightning strikes in the protected equipment. In addition, we show the indirect lightning effects verification test performed to validate the designed protection circuits.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.619-622
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• 2007

PDA provides an opportunity for users to study anytime and anywhere because it is portable and convenient thanks to its relatively small size. However, users may face difficulties to fully recognize the characters provided through lecture videos, due to its low resolution and small scaled screen. This thesis proposes a system of remote lecture in which the size of videos can be adjusted and transmitted on the basis of contents necessary for study, using detection of region-of-interest(ROI) image, and a method of image scaling in a bid to solve such a problem of PDAs. The experiment on 802.11b wireless network shows that the proposed system is able to provide more optimized lecture videos than in existing method.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2410-2416
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• 2016

Recently, most countries in the world have pursued a denuclearization. So it has been of interest to increase to Nuclear weapon in such as North Korea's continued nuclear test. Pulsed gamma rays produced in the nuclear explosion and the space environment can give the big damage to the electronic device in a very short period of time. To confirm the extent of damage of these electronic devices, pulsed gamma irradiation facility that can occur in nuclear weapon or space environment are required. In this paper, we implemented the pulsed gamma-ray detection module and analyzed output of the irradiation test. We have experimented using an electron beam accelerator research facilities in Pohang Accelerator similar conditions to equip and Nuclear weapon. As a result, we confirmed that the pulsed gamma rays emitted by the gamma radiation and electron beam conversion device. The results of this paper will contribute to improve the reliability and accuracy of studies for utilizing pulsed gamma rays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.486-492
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• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• The Journal of Engineering Research
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• v.6 no.1
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• pp.111-124
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• 2004

The advanced semiconductor technology and electronic design automation(EDA) tools make it possible to implement the system on the programmable logic devices. The electronic design method is also changing from schematic capture to hardware description language. In this paper, I present the architecture of multi-dimensional digital filter which can be efficiently implemented on PLDs. This is based on the former research results which are called algorithm decomposition technique. Algorithm decomposition technique is used to obtain the computational primitive from the state space equations of the multi-dimensional digital filtering algorithm. The obtained computational primitive is designed with VHDL. This can be used to implement the filtering system as a component. The designed filtering system is implemented on the PLD. Therefore, the filter can be upgradable on system. It is greatly reduced the time-to-market time of the system that is based on the multi-dimensional filter.