• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.144-150
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• 2008

Recently, there has been growing interest in low loss and low dielectric constant material for LTCC application, as the frequency range for electronic devices increases. This study was designed to evaluate the effect of cordierite filler for low dielectric constant LTCC material. From the previous experiments, two glass compositions of B-Si-Al-Zn-Ba-Ca-O and B-Si-Al-Sr-Ca-O system, were chosen. Each powder of two glass compositions was sintered respectively with commercial cordierite powder in temperature range from $800^{\circ}C\;to\;900^{\circ}C$. Crystalline cordierite and glass peaks were affected only with two factors of composition and sintering temperature among various factors. With the optimized condition of two cordierite/glass compositions, obtained dielectric constant was below 5.5 and quality factor was above 1,000. Closed pore of sintered body was controled by sintering temperature and sintering time. When cordierite/glass composite with ratio of 5.5:4.5 was sintered at $900^{\circ}C$, densification was sufficient with good dielectric characteristics of ${\epsilon}_r<5.1,\;Q{\ge}1,000$. Residual fine closed pores could be reduced with control of sintering temperature and time. 3 point bending strength and chemical durability were evaluated to obtain feasibility for substrate material.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.961-966
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• 2003

A quantum-chemical study of conformations and electronic structures of polyheterocyclic derivatives with vinylenediheteroatom substituents at the 3- and 4-positions was performed to search for novel blue-lightemitting conjugated polymers. Conformational potential energy curves of the polymers were constructed as a function of the helical angle (a) through semiempirical Hartree-Fock band calculations at the Austin model 1 level. It is found that poly(3,4-vinylenedioxythiophene) possesses a quite flat curve in the range of α = 51.4°- 120°. Replacing S atoms for O atoms greatly increases repulsion between the neighboring units, and thereby the units become perpendicular to one another. Because of the hydrogen bonding between O and NH, poly(3,4- vinylenedioxypyrrole) is predicted to be anti-coplanar and poly(3,4-vinylenediaminofuran) to be nearly anticoplanar. According to the modified extended Huckel band calculations, the HOMO-LUMO gaps (HLGs) of the polymers, unless the polymer chains are twisted, are close to or slightly smaller than those of their respective mother polymers. Among the polymers, poly(3,4-vinylenedioxythiophene) is presumed to be the most probable candidate for a blue-light emitter because its HLG is within the range of the electronic requirement for blue-light emitters.

• Journal of Institute of Control, Robotics and Systems
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• v.12 no.6
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• pp.614-620
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• 2006

Today the automobile has been changed from a mechanical system to an electronic control system fly the development of the electronic technology. In the automobile body, most of these electronic control devices are networked and managed fully by the CAN protocol. But, when a network system is overloaded, unexpected transmission delay for relative low priority objects occurs due to the static priority definition of the CAN protocol. To resolve this problem, this paper proposes a dynamic precedence queue mechanism that creates a queue for the low priority object and its relevant objects to be transmitted, which becomes urgent in an overloaded network system to keep the maximum allowable time delay. For the generated queue, the highest priority is assigned to transmit the queued objects within the shortest time. The mechanism is implemented in the logical link layer of CAN, which does not require any modification of the old CAN hardware. Effectiveness of the proposed mechanism is verified by the real experiments with an automobile network system.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.2
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• pp.3-8
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• 2017

This paper considers an application of distributed antenna system (DAS) to a system of intra-vehicle wireless energy transfer (WET). The intra-vehicle WET system has features such as limited mobility of energy receiver, static channel environment and short distance between transmitter and human body. Under these conditions, location of transmitter highly affects the amount of energy received by human body and the energy received by energy receiving devices. We compare centralized antenna system (CAS) and the DAS in intra-vehicle WET system by simulation. The results show the DAS has superior performance to the CAS.

• International journal of advanced smart convergence
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• v.4 no.2
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• pp.145-153
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• 2015

Development of IT technology, in combination with the medical area, a number of developments have been made of the digital advanced medical devices, also increased interest in health, sharing of medical information has become increasingly necessary. Standardization for medical information sharing to satisfy these requirements have been studied. However, the medical information system is to build a system independent hospital itself, is difficult to share and exchange medical data with other medical institutions. In this paper, we provide a medical cloud system that can share medical information. Use DBaaS of cloud services. And is an international standard to have a HL7 share information by forming a meta-schema, each of the data transfer, the format of the document oriented data solves the heterogeneity between hospitals. Extracts the required field name of examination information, to exchange information with each of the local information and mapping. Health diagnostic information in the present study and diagnosis through accurate information sharing and exchange is possible ongoing management.

• Journal of the Semiconductor & Display Technology
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• v.8 no.1
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• pp.13-17
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• 2009

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.

• Journal of Power Electronics
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• v.16 no.1
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• pp.249-258
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• 2016

Given that elastic connection is often used between motor drives and load devices in industrial applications, vibration often occurs at the load side. Vibration suppression is a crucial problem that needs to be addressed to achieve a high-performance servo-control system. Scholars have presented many strategies to suppress vibration. In this study, we propose a method to diminish vibration by using a torque feed-forward and disturbance torque observer. We analyze the system performance and explain the principle of the proposed vibration suppression method based on the transfer functions of the system. The design of controller parameters is another important issue in practical applications. We accordingly provide a succinct outline of the design specifications based on the coefficient diagram method. Furthermore, we build a model under the Simulink environment and conduct experiments to validate the proposed method. Results show that speed and position vibrations are successfully suppressed by the proposed method.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1426-1427
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• 2006

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.25-28
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• 2016

We investigate the effect of interface states on the endurance of a charge trap flash (CTF) NOR array using charge pumping methods. The endurance test was completed from one cell selected randomly from 128 bit cells, where the memory window value after 10² program/erase (P/E) cycles decreased slightly from 2.2 V to 1.7 V. However, the memory window closure abruptly accelerated after 10³ P/E cycles or more (i.e. 0.97 V or 0.7 V) due to a degraded programming speed. On the other hand, the interface trap density (Nit) gradually increased from 3.13×10¹¹ cm⁻² for the initial state to 4×10¹² cm⁻² for 10² P/E cycles. Over 10³ P/E cycles, the Nit increased dramatically from 5.51×10¹² cm⁻² for 10³ P/E cycles to 5.79×10¹² cm⁻² for 10⁴ P/E cycles due to tunnel oxide damages. These results show good correlation between the interface traps and endurance degradation of CTF devices in actual flash cell arrays.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.365-369
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• 2016

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.