• Proceedings of the KIEE Conference
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• 2004.11b
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• pp.252-254
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• 2004

This paper studies power quality problem of utility interconnected distributed generation. Recently, electronic devices that are sensitive to power quality have been increasing. Both utility and customer are interested in power quality problem. Therefore, we studied an effect of utility power quality caused by distributed generation. We detect and analysis voltage sag which is one of power quality indicator. Also, we used Matlab to simulate power quality problem.

• Polymer Science and Technology
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• v.25 no.3
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• pp.205-213
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• 2014

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1993.10a
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• pp.157-161
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• 1993

Optical devices and electronic equipments used in the laboratory of the synchrotron light source building of the accelerator have stringent vibration limits. In order to control the vibration of the building structure and HVAC systems which are main vibration sources are evaluated using experimental modal analysis. Double anti-vibration system is used for the HVAC system and results show that the double anti-vibration system reduces the vibrations of the building to acceptable levels.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.106-107
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• 2003

The interest of THz technology has been growing fast due to the potential of its vast applications. Today´s THz technology pursues semiconductor based miniature electronic devices operating at undeveloped electromagnetic frequency band between 100 GHz and 10 THz. Tremendous research progresses on THz technology have been made for decades. However, it is limited in the power and performance of THz sources and systems for real applications. (omitted)

• Journal of IKEEE
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• v.13 no.1
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• pp.19-29
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• 2009

For two input ESD protection schemes utilizing the NMOS protection device or the lvtr_thyristor protection device, which is suitable for high-frequency CMOS ICs, we attempt an in-depth comparison study on the HBM ESD protection level in terms of lattice heating inside the protection devices and the peak voltage applied to the gate oxides in the input buffer through DC, mixed-mode transient, and AC analyses utilizing the 2-dimensional device simulator. For this purpose, we suggest a method for the equivalent circuit modeling of the input HBM test environment for the CMOS chip equipped with the input ESD protection circuit. And by executing mixed-mode simulations including up to four protection devices and analyzing the results for five different test modes, we attempt a detailed analysis on the problems which can be occurred in a real HBM test. In this procedure, we explain about the strength and weakness of the two protection schemes as an input protection circuit for high-frequency ICs, and suggest guidelines relating to the design of the protection devices.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.1
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• pp.63-70
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• 2008

As the number of cell phone users become growing, some researchers have presented that the imprudent use of mobile phones exerts harmful influence on electronic devices such as medical appliances, takeoff and landing system of aircraft. In this paper, we propose a usage model based on context-awareness which can be applied to mobile devices. The model controls the usage of both mobile devices themselves and mobile contents according to some context information like location, time, the circumference noise, etc. The proposed usage control model includes a dynamic role-based access control approach. To show the effectiveness of the proposed model, we have implemented a prototype system on an embedded board and PC server, and evaluated the performance of the system.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.300-306
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• 2012

In this paper, we propose a vision based hand motion recognition method for an untouchable user interface of smart devices. First, an original color image is converted into a gray scaled image and its spacial resolution is reduced, taking the small memory and low computational power of smart devices into consideration. For robust recognition of hand motions through separation of horizontal and vertical motions, the horizontal principal area (HPA) and the vertical principal area (VPA) are defined respectively. From the difference images of the consecutively obtained images, the center of gravity (CoG) of the significantly changed pixels caused by hand motions is obtained, and the direction of hand motion is detected by defining the least mean squared line for the CoG in time. For verifying the feasibility of the proposed method, the experiments are carried out with a vision system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.8
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• pp.841-848
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• 2013

In order for unlicensed devices to co-exist on the same frequency band, the frequency interference mitigation policy is necessary. Because the effects of frequency interference between unlicensed devices may vary depending on the analysis layer, exact interference analysis must be proceeded before making any related spectrum policy. In this paper, a frequency interference between WLAN and WPAN systems that operate at 2.4 GHz ISM band were analyzed in the physical layer and MAC layer, respectively. From the results, we confirmed that the interference analysis in MAC layer is closer to the measured results. Based on these investigations, we suggest a new co-existence criterion for unlicensed devices in MAC layer.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.35-43
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• 2002

In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.75-82
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• 1999

TE$_{01\;{\delta}}$ mode Cavity Resonators with a low loss dielectric rod and YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) endplates were prepared and their microwave properties were studied at temperatures above 30 K. Both sapphire and rutile were used as the dielectrics. The TE$_{01\;{\delta}}$ mode Q$_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the dielectric rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K and .the resonant frequency of 19.56GHz when a sapphire rod was used for the dielectric. The TE$_2Cu_3O_{7-{\delta}}$ mode resonant frequency (f$_0$) appeared to decrease as the temperature is raised. Meanwhile, the temperature dependence of the TE$_2Cu_3O_{7-{\delta}}$ mode f$_0$ of the rutile-loaded resonator appeared different with f$_0$ increasing according to the temperature and Q$_0$ more than 300000 at 30 K and f$_0$ = 8.56 CHz. Comparisons were made between the microwave properties of the sapphire-loaded and the rutile-loaded resonators. Also, applications of the TE$_2Cu_3O_{7-{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q$_0$ as · well as a characterization tool for surface resistance measurements of HTS films are described.