• Title/Summary/Keyword: Electronic devices

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Improved sensitivity of surface acoustic wave gas sensor by using polyurethane absorption layer (폴리우레탄 감지막에 의한 표면탄성파 가스 센서의 감지능 향상)

  • Yoo, Beom-Keun;Park, Yong-Wook;Choi, Doo-Jin;Kim, Hyun-Jai;Kim, Jin-Sang;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.364-364
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    • 2007
  • This paper presents characteristics of surface acoustic wave (SAW) gas sensor for detecting volatile gases such as ethanol gas by measuring phase shift of output signal. A delay-line with a center frequency of 400MHz was fabricated on 128o Y-Z $LiNbO_3$ substrates. Experimental results, which show the phase change of output signal under the absorption of volatile gas on sensor surface, were presented. The sensitivities of SAW delay lines coated with polyurethane films are greatly increased compared to those for uncoated devices. This SAW gas sensor system may be well suited for a high sensitivity electronic nose system.

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Electrical and Optical Properties on Thickness of Ag and Chalcogenide Thin Films at Programmable Metallization Cell Device (Programmable Metallization Cell(PMC) 소자에서 Ag와 칼코게나이드 박막의 두께에 따른 전기적 광학적 특성)

  • Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.24-24
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

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Electric Circuits Modeling of Magnetoelectric Bulk Composites in Low Frequency (ME 소자의 저주파 등가회로 모델링)

  • Chung, Su-Tae;Ryu, Ji-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.7
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    • pp.515-521
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    • 2013
  • Magnetoelectric(ME) bulk composites with PZT-PNN-PZN/$Fe_2O_4$ were prepared by using a conventional ceramic methods and investigated on the ME voltage vs frequency of ac magnetic fields. We made the electric equivalent circuits by using the Maxwell-Wagner model and simulated the frequency dependence of ME voltage in low frequency region. ME devices were described by a series of two equivalent circuits of piezoelectric and magnetic, which have the relaxation time ${\tau}$ due to the interaction between ME device and load resistor. Equivalent circuit of piezoelectric material is independent of frequency. However ferrite magnetic materials have Debye absorption and dipolar dispersion, whose equivalent circuit is a function of frequency. Therefore we suggest the resistance in the equivalent circuit is proportion to $1+{\omega}^2{\tau}^2$ and the capacitance is in inverse proportion to $1+{\omega}^2{\tau}^2$ in the magnetic materials.

Study of Low Temperature Solution-Processed Al2O3 Gate Insulator by DUV and Thermal Hybrid Treatment (DUV와 열의 하이브리드 저온 용액공정에 의해 형성된 Al2O3 게이트 절연막 연구)

  • Jang, Hyun Gyu;Kim, Won Keun;Oh, Min Suk;Kwon, Soon-Hyung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.286-290
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    • 2020
  • The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

Capacitance Properties of $Poly-\gamma-Benzyl\;_L-Glutamate$ in Organic Ultra Thin Films ($Poly-\gamma-Benzyl\;_L-Glutamate$ 유기초박막의 정전용량특성)

  • Kim, Byung-Geun;Kim, Chang-Bok;Kim, Young-Keun;Choi, Young-Il;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.147-149
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    • 2002
  • Recently, the study on development of electrical and electronic device is done to set miniature, high degrees of integration and efficiency by using inorganic materials the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

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Hand Gesture Recognition Using an Infrared Proximity Sensor Array

  • Batchuluun, Ganbayar;Odgerel, Bayanmunkh;Lee, Chang Hoon
    • International Journal of Fuzzy Logic and Intelligent Systems
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    • v.15 no.3
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    • pp.186-191
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    • 2015
  • Hand gesture is the most common tool used to interact with and control various electronic devices. In this paper, we propose a novel hand gesture recognition method using fuzzy logic based classification with a new type of sensor array. In some cases, feature patterns of hand gesture signals cannot be uniquely distinguished and recognized when people perform the same gesture in different ways. Moreover, differences in the hand shape and skeletal articulation of the arm influence to the process. Manifold features were extracted, and efficient features, which make gestures distinguishable, were selected. However, there exist similar feature patterns across different hand gestures, and fuzzy logic is applied to classify them. Fuzzy rules are defined based on the many feature patterns of the input signal. An adaptive neural fuzzy inference system was used to generate fuzzy rules automatically for classifying hand gestures using low number of feature patterns as input. In addition, emotion expression was conducted after the hand gesture recognition for resultant human-robot interaction. Our proposed method was tested with many hand gesture datasets and validated with different evaluation metrics. Experimental results show that our method detects more hand gestures as compared to the other existing methods with robust hand gesture recognition and corresponding emotion expressions, in real time.

Knowing the Level of Information Security Awareness in the Usage of Social Media Among Female Secondary School Students in Eastern Makkah Al-Mukarramah- Saudi Arabia

  • Gharieb, Magdah Ezat
    • International Journal of Computer Science & Network Security
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    • v.21 no.8
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    • pp.360-368
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    • 2021
  • This study aims at knowing both the level of information security awareness in the use of social media among female secondary school students in Makkah Al-Mukarramah, and the procedures that students follow when exposed to hacking or other security problems. The study relied on the descriptive survey approach. The results showed a high percentage of social media use among the study sample, and the most used applications by the students are snapchat and Instagram applications successively. In fact, 48% of the study sample have awareness of information security, the majority of the students memorize the password in the devices, most of them do not change them, and they have knowledge of fake gates and social engineering. However, their knowledge of electronic hacking is weak, and students do not share passwords with anyone at a rate of 67%. At the same time, they do not update passwords. Moreover, most of the procedures followed by students when exposed to theft and hacking is to change the e-mail data and the password, and the results varied apart from that, which reflects the weak awareness of the students and the weakness of procedures related to information security. The study recommends the necessity to raise awareness and education of the importance of information security and safety, especially in light of what the world faces from data electronic attacks and hackings of electronic applications.

The Design and Test of the Electronic Arm Fire Device Circuit (전자식 점화안전장치 회로부 설계 및 검증)

  • Gim, Hakseong;Hwang, Jung-Min;Jang, Seung-gyo;Kim, Jae-Hoon;Hwang, Dae-Gyu
    • Journal of the Korea Institute of Military Science and Technology
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    • v.21 no.6
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    • pp.857-864
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    • 2018
  • This paper describes about the circuit design and test of the electronic Arm Fire Device. Electronic arm fire device consists of igniter, circuit and housing case and it operates without the actuator such as torque motor or solenoid. A high-voltage DC-DC converter was used to generate the voltage for initiating the LEEFI(Low Energy Exploding Foil Initiator). The MEMS switch was used to detect the acceleration that occurs when missile is launched, and the circuit was designed considering the size, performance, and specification of the electronic devices. The performance test was conducted to verify the designed circuit and we confirmed that it operates well.

Estimating Indoor Radio Environment Maps with Mobile Robots and Machine Learning

  • Taewoong Hwang;Mario R. Camana Acosta;Carla E. Garcia Moreta;Insoo Koo
    • International journal of advanced smart convergence
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    • v.12 no.1
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    • pp.92-100
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    • 2023
  • Wireless communication technology is becoming increasingly prevalent in smart factories, but the rise in the number of wireless devices can lead to interference in the ISM band and obstacles like metal blocks within the factory can weaken communication signals, creating radio shadow areas that impede information exchange. Consequently, accurately determining the radio communication coverage range is crucial. To address this issue, a Radio Environment Map (REM) can be used to provide information about the radio environment in a specific area. In this paper, a technique for estimating an indoor REM usinga mobile robot and machine learning methods is introduced. The mobile robot first collects and processes data, including the Received Signal Strength Indicator (RSSI) and location estimation. This data is then used to implement the REM through machine learning regression algorithms such as Extra Tree Regressor, Random Forest Regressor, and Decision Tree Regressor. Furthermore, the numerical and visual performance of REM for each model can be assessed in terms of R2 and Root Mean Square Error (RMSE).

Transient trap density in thin silicon oxides

  • Kang, C.S.;Kim, D.J.;Byun, M.G.;Kim, Y.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.6
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    • pp.412-417
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    • 2000
  • High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

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