• Journal of Digital Contents Society
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• v.10 no.2
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• pp.233-238
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• 2009

The advances in the digital communication and network technology, Internet technology and the proliferation of smart appliances in home, have dramatically increased the need for a high speed/high quality home network. As consumer electronic devices and computing devices are increasing in the home network, it is obvious that the data traffic of home network increases as well. Various home network devices want to access Internet servers to get multimedia contents. Therefore, we introduce TLC(Telephone Line Carrier) system for networked digital consumer electronic appliances within a house using Ethernet or wire/wireless technology. In the future home network environment, the primary purposes of the smart home network based TLC are to create low-cost, easily deployable, high performance, and wide coverage throughout the home. In this paper, the channel capacity of telephone line communication system is evaluated and compared as a function of transmission power, number of OFDM carrier, channel loss, and noise loss for smart home network.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.1
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• pp.203-211
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• 2012

Network security infrastructure is constantly developing based on the combination and blending of various types of devices. From the form of distributed control, the phased defense policy such as fire walls, virtual private communication network, invasion prevention system, invasion detection system, corporate security management, and TSM (Telebiometrics System Mechanism), now it consolidates security devices and solutions to be developed to the step of concentration and artificial intelligence. Therefore, this article suggests network security infrastructure design types concentrating security devices and solutions as platform types and provides network security infrastructure design selecting methodology, the foundational data to standardize platform design according to each situation so as to propose methodology that can realize and build the design which is readily applied and realized in the field and also can minimize the problems by controlling the interferences from invasion.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.981-984
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• 2005

This study is to realize its threshold voltage shift after programming operation in charge trap type SONOS memory by simulation. SONOS devices are charge trap type nonvolatile memory devices in which charge storage takes place in traps in the nitride-blocking oxide interface and the nitride layer. For simulation of their threshold voltage as a function of the memory states, traps in the nitride layer have to be defined. However, trap models in the nitride layer are not developed in commercial simulator. So, we propose a new method that can simulate their threshold voltage shift by an amount of charges induced to the electrodes as a function of a programming voltages and times as define two electrodes in the tunnel oxide-nitride interface and the nitride-blocking oxide interface of SONOS structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.362-366
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• 2018

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.403-406
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• 2000

The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.2
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• pp.323-330
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• 2019

Recently, as the growth of the Internet has led to a rapid increase in the consumption of multimedia such as photographs and moving images, the importance of metadata has been emphasized. In the case of existing metadata, only limited information such as GPS value or focal length according to the format is stored. However, with the development of mobile devices and multimedia acquisition devices, various sensors can be used in the devices. Therefore, this paper describes a method that can store not only the existing metadata format information at the time of multimedia acquisition but also another existing format of metadata such as information of various sensors which is the gyroscope and acceleration sensor of the device. We propose an application program that provides moving location information. The proposed method is expected to provide various applications such as image matching and effective image classification.

• Journal of the Korean Applied Science and Technology
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• v.37 no.6
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• pp.1591-1596
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• 2020

The solid-state electrolyte based on polymer has great attention to develop its ionic conductivity from conventional polymer electrolyte by using wide range of ionic liquids with remarkable processability, flexibility and is applicable to various electrochemical devices including batteries, supercapacitor. Polymer electrolyte based on Ionic liquid with high conductivity, wide electrochemical stability, thermal stability is used in various electronic devices. In this work, we have investigated and developed solid-state electrolyte based on ionic liquid and polymer with enhanced ionic conductivity and electrochemical performances to conduct to various electronic devices including secondary battery. The ionic conductivity of polymer based solid state electrolyte with optimized ratio of the ionic liquid was 1.46-2 S/cm. The ionic liquid and polymer based electrolyte with enhanced ionic conductivity is promising candidates to utilize in wide range of secondary batteries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.56-62
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• 2021

In this study, we created a DBD plasma device and a MnO2 catalyst mesh filter for evaluating ozone reduction of devices via the catalyst method. The DBD plasma device was manufactured by applying Ag paste to soda lime glass via the screen-printing method. The MnO2 catalyst mesh filter was manufactured by mixing MnO2 powder with binder with a 10% difference in concentration from 10% to 50% and then applying it using the dip-coating method. Finally, we sintered a MnO2 catalyst mesh filter in an electric furnace. We evaluated the characteristics of ozone generation according to the Ar gas flow of DBD plasma devices, the opening ratio, and ozone reduction performance of the MnO2 catalyst filters. Ozone reduction performance was approximately 20.4% at MnO2 10 wt%, 37.8% at MnO2 30 wt% and 50% at MnO2 50 wt%.