• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.586-589
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• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer far electronic and optoelectronic devices. In this study, $\alpha$ -sexithiophene($\alpha$-6T) thin films and various electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned fur measurements. Electrical characterization of the thin film transistor with various channel length were measured, and field effect mobility is calculated by formula.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.11a
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• pp.333-337
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• 2005

We have studied the loss characteristics of the electronic ballast for the 250 watt HID lamps. The researched electronic ballast has a low loss, a low THD for input current and the other reliable characteristics. By the experrimental results and the analytical method, we concluded that the switching devices loss is 33%, and the Inductances loss is 42.6% of the total losses.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.273-277
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the electronic and transport properties of graphene nanoribbons (GNRs) co-doped with boron-nitrogen, nitrogen-phosphorus and boron-phosphorus. We analyze the structures and charge transport properties of co-doped GNRs and particularly focus on the novel effects that are absent for the single N-, B-, or P-doped GNRs. It is found that co-doped GNRs tend to be doped at the edges and the electronic structures of co-doped GNRs are very sensitive to the doping sites. Also, in case of B-N and B-P co-doped GNRs, conductance dips of single-doped GNRs disappeared with the disappearance of localized states associated with doped atoms. This may lead to a possible method of band engineering of GNRs and benefit the design of graphene electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.798-804
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• 2012

This paper focuses on thermal properties of a newly prepared composite material by nano-silica and micro-silica mixture. Nano-silica and micro-silica mixture composites were made by dispersing surface treated nano-silica(average radius: 10 nm) and micro-size silica in epoxy resin. To investigate the effects of nano-silica and micro-size silica mixture(ENMC), the glass transition temperature (Tg), coefficients of thermal expansion(CTE) and elastic modulus of DMA properties by DSC, TMA and DMA devices were measured for the ENMC according to increase nano-silica addition contents and EMC. All properties of the neat epoxy were improved by the addition of micro-silica, which was improved much further by the addition of surface treated nano-silica to the EMC system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.954-958
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• 2000

The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.5-8
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• 1997

A study on the electrical conduction characteristics of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir- Blodgett(LB) technique has recently been attracted interest as a method of the deposition ultrathin films. We hate fabricated N-docosyl N\`-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the molecular orientation and electrical conduction characteristics. We have measured infrared transmission-reflection spectra. The alkyl chain is found to he well-ordered with the tilt angle of 13$^{\circ}$ with respect to the substrate surface normal and the TCNQ plane is tilted at 76$^{\circ}$ the surface normal. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on the incident angle, which indicates conducting species change. The in-plane conductivity of 31 lagers is approximately 1.33$\times$10$^{-6}$ S/cm. The ohmic behaviour was observed below 0.6 V, when current-voltage(I-V) characteristics was measured verically.

• Journal of the Korea Institute of Military Science and Technology
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• v.9 no.2 s.25
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• pp.5-10
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• 2006

The heavy thermal load to battle tanks can cause electronic components' malfunction and crew to be put out of action. The thermal load is generated from Internal heat sources such as electronic devices installed in the room as well as extremely hot weather. In this study, heat and flow analysis for the cabin room of a battle tank was performed to deal with this thermal problem. This study presented the validation of simulation results in comparison with those of test, the investigation of optimal flow design for effective cooling in cabin room and finally the evaluation of thermal comforts to crew.

• Journal of information and communication convergence engineering
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• v.11 no.2
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• pp.112-117
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• 2013

In order to reuse a register transfer level (RTL)-based IP block, it takes another architectural exploration in which the RTL will be put, and it also takes virtual platforms to develop the driver and applications software. Due to the increasing demands of new technology, the hardware and software complexity of organizing embedded systems is growing rapidly. Accordingly, the traditional design methodology cannot stand up forever to designing complex devices. In this paper, I introduce an electronic system level (ESL)-based approach to designing complex hardware with a derivative of SystemVerilog. I adopted the concept of reuse with higher levels of abstraction of the ESL language than traditional HDLs to design multiplication server farms. Using the concept of ESL, I successfully implemented server farms as well as a test bench in one simulation environment. It would have cost a number of Verilog/C simulations if I had followed the traditional way, which would have required much more time and effort.

• Journal of Power Electronics
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• v.15 no.2
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• pp.319-326
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• 2015

In this paper, a cost-effective single switch multi-channel LED (light emitting diode) driver is proposed. While conventional LED drivers require as many non-isolated DC/DC converters as the number of LED channels, the proposed LED driver needs only one power switch and several balancing capacitors instead of expensive non-isolated DC/DC converters. Therefore, the proposed driver features a simpler structure, with a lower cost and a higher efficiency. Because its power switch can be turned off under the zero current switching condition, it has very desirable advantages such as improved electromagnetic interference characteristics and high efficiency. Moreover, it uses only a small number of DC blocking capacitors with no additional active devices for the current balancing of multi-channel LEDs. As a result, the proposed driver exhibits high reliability and is cost effective. To confirm the validity of the proposed driver, a theoretical analysis is performed, and design considerations and experimental results obtained from a prototype that is applicable to a 46" LED-TV are presented.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.860-868
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• 2016

A bidirectional DC-DC converter (BDC) is an indispensable electrical unit for the electric vehicles (EVs). High efficiency, high power density, isolation, light weight and reliability are all essential requirements for BDC. In this paper, a 3 kW BDC for the battery charger of EVs is proposed. The proposed converter consists of a half-bridge structure on the primary side and an isolation transformer and a synchronous rectifier structure on the secondary side. With this topology, minimum number of switching devices are required for bidirectional power flow between the two dc buses of EVs. The easy implementation of the synchronous rectification gives advantages in terms of efficiency, cost and flexibility. The proposed BDC achieves high efficiency when operating in both modes (step-up and step-down). A 3 kW prototype is implemented to verify theoretical analysis and the performance of the proposed converter.