• The Korean Journal of Ceramics
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• 제4권2호
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• pp.141-145
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• 1998

The electrical properties of the mixed conducting yttria(8 mol%) stabilized zirconia(YSZ)-nickel oxide(NiO) composites were examined by a.c. impedance, 4-probe d.c. conductivity between 400 and $1000^{\circ}C$. The oxygen partial pressure dependence of conductivity, and electromotive force measurement of galvanic cell enabled to determine the electronic contribution to the conduction. Up to 6 vol% NiO addition, the conductivity decreased since the electronic NiO acted as an insulator in ionic matrix. However the ionic transport was dominant until NiO content reaches 26 vol%. Mixed conduction was observed between 26 and 68 vol% of NiO. The effect of composition on the electrical property was explained by the microstructure and thus by the distribution of two phases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.281-285
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• 1998

The microstructure and conduction characteristics of ZnO varistor fabricated in the range of 0.0 ~ 4.0mol% $Y_20_3$ were investigated. With increasing$Y_20_3$ content, distribution of spinel phase decreased, whereas Y-rich phase segregated to the nodal point increased, as a result, the average grain size decreased in the range of $20.0 ~ 4.8{\mu}m$. $Y_20_3$ content showing relatively good conduction characteristics was l.Omol%, then nonlinear exponent and leakage current was 55.3, 0.66mA.respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.729-732
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• 2001

In this study, the effect of oxygen partial pressure on the electrical properties of vanadium oxide(VO$_{x}$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from V$_2$O$_{5}$ target in a gas mixture of argon and oxygen. The oxygen partial pressure ratio is changed from 0% to 8%. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.ure.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1007-1010
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• 2003

We made use of $Alq_3$ which is the representative light-emitting material. Electric conduction mechanism and luminance characteristics were analyzed in this paper. We have also measured current density-thickness-voltage characteristics with thickness variation from 60 to 400nm. we analyzed the low electric and the high electric field in theoretically. Also, maximum luminous efficiency is the thickness 200 nm of $Alq_3$ in luminous-thickness characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.358-359
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• 2008

The heat generated in the high-Tc superconducting (HTS) devices is related with the cost efficiency and safe factor of HTS devices. This paper deals with the quench at the conduction-cooled joint between the HTS wire and copper terminals. The 3-D numerical simulation of this phenomenon was implemented and compared with the experimental results. The experiment was implemented with the HTS wire mounted on the copper blocks cooled with a Gifford McMahon (GM) cryocooler.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.763-765
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• 1988

Thermally stimulated current, cubical expension, capability change were measured by temperature variation. According to the capability change, TSC peak value was increased. We found that the crystal dissolution is 375 K and amorphous state becomes 388K. Charged partical behavior in the dipole and electronic trop were found iomic conduction in the low field and electronic conduction in the high field. Charged particle in the semiconduction storey was aceumulated in the interface by electron injection which can be arise TSC.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.832-837
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• 2006

Antennas were fabricated by physical(adhesive) and chemical(deposition+plating) method on organic-inorganic composite material. And antennas were measured dielectric constant and gain. Dielectric constant of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness and number of conduction material composition. But antennas were fabricated by chemical method was reached to 90 % of dielectric material. Gain of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness. But they were unrelated with conduction material composition. The other side antennas were fabricated by chemical method excelled more 0.8 dBic than antennas were fabricated by physical method in gain of antenna. Finally, chemical method can expect excellent product process because it can produce smaller size, higher gain and elimination of many handworks.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.763-767
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• 1998

In this paper, it is investigated how the morphology and electrical properties in Polyphenylene Sulfide(PPS) changed by uniaxial elongation. XRD(X-ray diffraction) pattern shows that interplanar distance and crystallinities are decreased by increasing elongation ratio. electrical conduction mechanism of PPS is explained as Schottky emission mechanism. the electrical current is decreased by increasing elongation ratio. The conductivity is changed considerably above the glass transition temperature around 82(>$^{\circ}C$). The band gap of PPS is evaluated as 3.7~4(eV)

• 대한기계학회논문집
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• 제13권4호
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• pp.726-733
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• 1989

본 연구에서는 전력 다이오드 칩이 방산판에 부착되어 있는 형상을 기준하여 열전달 모형을 설정하고 해석적 해가 존재하는 단수형상으로 이상화하여 국부적 온도 상승을 일으키는 조건을 파악하고 실제형상의 모형에 대하여 유한요소해석에 의한 온도분포 계산결과를 제시한다.또한 발열체가 인접해 있는 경우에 대한 온도 집중 현상의 결과도 아울러 검토한다.