• Polymer(Korea)
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• v.33 no.5
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• pp.397-406
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• 2009

We have fabricated source-drain electrodes for OTFTs using a screen-printing technique with carbon-black pastes as conductive paste. And effects of dispersants contents (SOP 10-40%) on the dispersity of carbon-black pastes and characteristics of screen-printed source-drain electrodes for OTFTs using two types of dispersants (DB-2150, DB-9077) were investigated. As contents of both dispersants were increased the dispersity of carbon-black mill-bases was improved, whereas the carbon-black pastes exhibited different dispersion characteristics. For the case of DB-2150, the dispersity of the pastes was improved with increasing dispersant content and the storage modulus G' in their rheology characteristics were reduced. But, for the DB-9077, the storage modulus G' of pastes were increased with dispersant content due to the flocculated network structure formed by interactions among carbon-black powders and dispersants. But, since this flocculated network structure of the pastes using DB-9077 resulted in the conduction path of carbon-black structures, the conductivities of screen-printed electrodes and mobilities of the OTFTs with them were better than those using pastes with DB-2150.

• Journal of the Korean Electrochemical Society
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• v.2 no.2
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• pp.88-92
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• 1999

The apparent density. self-separation of the electrode composite from current collector in the electrolyte solution and specific resistance of electronic conduction of the electrode composite were examined by the variation of content of conductive material such as graphitic and black carbons in $LiCoO_2$ composite electrode for lithium ion battery. Increasing the content of conductive material, the apparent density of Lico02 composite electrode was decreased and that of $LiCoO_2$ in composite electrode was only rapidly decreased compared to that of composite. $LiCoO_2$ composite electrodes containing more than 4.1 weight percent of super s black as a conductive material were seU-separated by the immersion into 1 mol/I $LiPF_6$ in propylene carbonate and diethyl carbonate (1:1 volume ratio). Specific resistances related to the electronic conduction of composite electrode were decreased by the increasing the content i)f conductive material. Specific resistance of the composite electrode including $2\~3\%w/w$ of super s black as conductive material was similar to that of $12\%w/w$ of Lonza KS6. In the range of this study, super s black as conductive material is better than Lonza KS6 on battery capacity because of apparent density of $LiCoO_2$ in electrode composite including super s black is higher than that of Lonza KS6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.1
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• pp.1-10
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• 2020

The atomic structures of silicate liquids at high pressure provide insights into the transport properties including thermal conductivities or elemental partitioning behavior between rocks and magmas in Earth's interior. Whereas the local electronic structure around silicon may vary with the arrangement of the nearby oxygens, the detailed nature of such relationship remains to be established. Here, we explored the atomic origin of the pressure-induced changes in the electronic structure around silicon by calculating the partial electronic density of states and L₃-edge X-ray absorption spectra of SiO₂ polymorphs. The result showed that the Si PDOS at the conduction band varies with the crystal structure and local atomic environments. Particularly, d-orbital showed the distinct features at 108 and 130 eV upon the changes in the coordination number of Si. Calculated Si XAS spectra showed features due to the s,d-orbitals at the conduction band and varied similarly with those observed in s,d-orbitals upon changes in the crystal structures. The calculated Si XAS spectrum for α-quartz was analogous to the experimental Si XRS spectrum for SiO₂ glass, implying the overall similarities in the local atomic environments around the Si. The edge energies at the center of gravity of XAS spectra were closely related to the Si-O distance, thus showing the systematic changes upon densification. Current results suggest that the Si L_2,3-edge XRS, sensitive probe of the Si-O distance, would be useful in unveiling the densification mechanism of silicate glasses and melts at high pressure.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

• Journal of Power Electronics
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• v.15 no.3
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• pp.621-633
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• 2015

This paper proposes the analysis and design of a DC-side symmetrical zero-current-switching (ZCS) Class-D current-source driven resonant rectifier to improve the low power-factor and high line current harmonic distortion of lighting applications. An analysis of the junction capacitance effect of Class-D ZCS rectifier diodes, which has a significant impact on line current harmonic distortion, is discussed in this paper. The design procedure is based on the principle of the symmetrical Class-D ZCS rectifier, which ensures more accurate results and provides a more systematic and feasible analysis methodology. Improvement in the power quality is achieved by using the output characteristics of the DC-side Class-D ZCS rectifier, which is inserted between the front-end bridge-rectifier and the bulk-filter capacitor. By using this symmetrical topology, the conduction angle of the bridge-rectifier diode current is increased and the low line harmonic distortion and power-factor near unity were naturally achieved. The peak and ripple values of the line current are also reduced, which allows for a reduced filter-inductor volume of the electromagnetic interference (EMI) filter. In addition, low-cost standard-recovery diodes can be employed as a bridge-rectifier. The validity of the theoretical analysis is confirmed by simulation and experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.295-299
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• 2015

In this paper to improve the ionic conduction properties, lanthanum silicate apatite $La_{9.33}(SiO_4)_6O_2$ ceramic, which substituted by V ions at Si-site, were fabricated by the mixed-oxide method. And we investigated the structural and electrical properties of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens with variation of dopants for the application of solid oxide fuel cells. The sintering temperature of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens decreased from $1,600^{\circ}C$ to $1,400^{\circ}C$. As results of X-ray diffraction patterns, all $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens showed the formation of a complete solid solution in a apatite polycrystallin structure. But the specimens doped with more than 1.5mol% showed the second phase, $La_2SiO_5$ and $SiO_2$. The specimen dopants with 1.0 mol% showed the maximum ion conductivity. Ion conducting and activation energy of the $La_{9.33}(Si_5V_1)O_26$ specimens were about $7.8{\times}10^{-4}S/cm$ 1.62 eV at $600^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.962-968
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• 2011

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.60-63
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• 2012

Enhancement of efficiency and luminance of organic light-emitting diodes was investigated by the introduction of a lithium carbonate ($Li_2CO_3$) electron-injection layer. Electron-injection layer is used in organic light-emitting diodes to inject electrons efficiently between a cathode and an organic layer. A device structure of ITO/TPD (40 nm)/$Alq_3$ (60 nm)/$Li_2CO_3$ (x nm)/Al (100 nm) was manufactured by thermal evaporation, where the thickness of $Li_2CO_3$ layer was varied from 0 to 3.3 nm. Current density-luminance-voltage characteristics of the device were measured and analyzed. When the thickness of $Li_2CO_3$ layer is 0.7 nm, the current efficiency and luminance of the device at 8.0 V are improved by a factor of about 18 and 3,000 compared to the ones without the $Li_2CO_3$ layer, respectively. The enhancement of efficiency and luminance of the device with an insertion of $Li_2CO_3$ electron-injection layer is thought to be due to the lowering of an electron barrier height at the interface region between the cathode and the emissive layer. This is judged from an analysis of current density-voltage characteristics with a Fowler-Nordheim tunneling conduction mechanism model. In a study of lifetime of the device that depends on the thickness of $Li_2CO_3$ layer, the optimum thickness of $Li_2CO_3$ layer was obtained to be 1.1 nm. It is thought that an improvement in the lifetime is due to the prevention of moisture and oxygen by $Li_2CO_3$ layer. Thus, from the efficiency and lifetime of the device, we have obtained the optimum thickness of $Li_2CO_3$ layer to be about 1.0 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.909-914
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• 2013

CIGS is one of thin film solar cell and has been studied so much, because of the possibility of low price and high efficiency. Until now, co-evaporation and sputtering were typical method to prepare CIGS absorption layer, and a few company commercialized solar cell by these method. However, non-vacuum process which has been studied for long time has not been progressed, though the merit of low price. Especially, aerosol deposition method has not been reported, because it is difficult to prepare a large quantity of various CIGS powder. In this study, CIGS powder was synthesized by mechanochemical method and CIGS absorption layer was deposited by aerosol deposition method. The thickness of the CIGS layer was controlled by the number of deposition and the surface roughness of it was affected by the amount of flow gas. And, also, I-V curve of it appeared metallic property in the case of 'as deposition'. After heat treatment in Se-rich atmosphere, the electrical property of it changed to a semiconductor. CdS and transparent conduction layer were formed by a typical method on it for solar cell. The efficiency of cell was appeared 0.19%. Though the efficiency was low because of the disharmony in the after-process, it was conformed that CIGS solar cell could be prepared by aerosol deposition.