• Journal of Power Electronics
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• v.15 no.3
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• pp.644-651
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• 2015

This paper introduces a novel digital one cycle control (DOCC) boost power factor correction (PFC) converter. The proposed PFC converter realizes the FPGA-based DOCC control approach for single-phase PFC rectifiers without input voltage sensing or a complicated two-loop compensation design. It can also achieve a high power factor and the operation of low harmonic input current ingredients over universal loads in continuous conduction mode. The trailing triangle modulation adopted in this approach makes the acquisition of the average input current an easy process. The controller implementation is based on a boost topology power circuit with low speed, low-resolution A/D converters, and economical FPGA development board. Experimental results demonstrate that the proposed PFC rectifier can obtain a PF value of up to 0.999 and a minimum THD of at least 1.9% using a 120W prototype.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.8-8
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• 2009

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ ratio from 1.2 to 1.8%. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.99.1-99.1
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• 2016

The materials for an electronic packaging provide diverse important functions including electrical contact to transfer signals from devices, isolation to protect from the environment and a path for heat conduction away from the devices. The packaging materials composed of metals, ceramics, polymers or combinations are crucial to the device operating properly and reliably. The demand of effective charge and heat transfer continuous to be challenge for the high-speed and high-power devices. Nanomaterials including graphene, carbon nanotube and boron nitride, have been designed for the purpose of exploiting the high thermal, electrical and mechanical properties by combining in the matrix of metal or polymer. In addition, considering the inherent electrical and surface properties of graphene, it is expected that graphene would be a good candidate for the surface layer of a template in the electroforming process. In this talk, I will present recent our on-going works in nanomaterials for microelectronic packaging: 1) porous graphene/Cu for heat dissipations, 2) carbon-metal composites for interconnects and 3) nanomaterials-epoxy composites as a thermal interface materials for electronic packaging.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.504-510
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• 1994

In this work the crystal structure, optical absorption and photoluminescence of Cd$_{4}$GeSe$_{6}$ single srystals grown by the vertical bridgman method are investigated. From the observed results of the PICTS, we proposed on energy band model which contains deep levels between the conduction band and the valence band. The energy band model permit us to explain the mechanism of the radiative recombination for the Cd$_{4}$GeSe$_{6}$ single crystals.als.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.802-807
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• 2007

We have developed red phosphorescent top emission organic light-emitting diodes with transparent metal cathodes deposited by using thermal evaporation technique. Phosphorescent guest molecule, BtpIr(acac), was doped in host CBP for the red phosphorescent emission, Ca/Ag, Ba/Ag, and Mg/Ag double layers were used as cathode materials of top emission devices, which were composed of glass/Ni/2TNATA(15 nm)/${\alpha}$-NPD(35 nm)/CBP:BtpIr(acac)(40 nm, 10%)/BCP(5 nm)/$Alq_3$(5 nm)/cathodes. The optical transparencies of these metal cathodes strongly depend on underlying Ca, Ba, and Mg layers. These layers also strongly affect the electrical conduction and emission properties of the red phosphorescent top emission devices.

• Electrical & Electronic Materials
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• v.2 no.1
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• pp.52-64
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• 1989

본 연구에서는 고분자-고분자 및 고분자-금속-고분자의 구조를 갖는 2층고분가물질에 관한 전도전류특성이 조사되었다. 그 결과 2층고분자시료의 전도전류는 인가전압의 극성에 따라 차이가 있었으며 폴리에틸렌과 산화폴리에틸렌으로 구성되는 2층시료 PE-OxPE의 경우 OxPE의 산화도가 증대될 수록 전도전류값이 증가하는 것으로 나타났다. 또한 2충시료 PE-EVA에 대한 전도전류의 극성효과는 (+)극으로부터의 전하주입성이 뛰어난 EVA의 특성에 기인한다. 2층 고분자시료의 중간에 금속(Al)이 삽입된 PE-Al-EVA계의 전도전류특성은 Maxell-Wagner모델에 의한 이론에 대체로 부합되지만 이때의 전도전류는 PE-EVA의 구조보다 낮게 관측되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.76-77
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• 2009

In this paper, We have studied Electron Transport Layer(ETL) in the New Organics applied to Red phosphorescent organic light-emitting devices. The structure of ITO/2-TNATA(15nm)/CBP;$Ir(piq)_3$/DPVBi(30nm)/New ETL(60nm)/LiF(0.5nm)/Al(100nm) has been used, measured changing doping concentration of EML. The results of OLED turn-on voltage at 2.2V, and Maximum Luminance at 2.8V was $1000cd/m^2$. This high luminance at low voltage results from a high electron. conduction of the new electron transport layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.324-327
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• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.1970-1979
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• 2017

Ultra Lift Luo Converter (ULC) gained considerable research interest in recent years. The stability analysis of voltage mode and peak current mode controlled ULC in continuous conduction mode is analyzed in this paper. The Eigen value theory is used for the stability analysis of voltage mode controlled ULC. Then to characterize the dynamics of inner current loop, the expressions of closed loop transfer function and loop gain are determined. An algorithm has been developed to analyze the stability of the peak current mode controlled ULC. The theoretical results are correlated with the simulation results obtained using PSIM 9.1(SMARTCTRL 1.0) software. Finally it is proposed to fabricate a prototype and validate the performance by suitable experimental setup.