• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.289-294
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• 2014

The stability of a solid oxide fuel cell (SOFC) stack is strongly dependent on the magnitude and profile of the internal chemical potential of the solid electrolyte. If the internal partial pressure is too high, the electrolyte can be delaminated from the electrodes. The formation of high internal pressure is attributed to a negative cell voltage, and this phenomenon can occur in a bad cell (with higher resistance) in a stack. This fact implies that the internal chemical potential plays an important role in determining the lifetime of a stack. In the present work, we fabricate planar type anode-supported cells ($25cm^2$) with a bi-layer electrolyte (with locally increased electronic conduction at the anode side) to prevent high internal pressure, and we test the fabricated cells under a negative voltage condition. The results indicate that the addition of electronic conduction in the electrolyte can effectively depress internal pressure and improve the cell stability.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.396-403
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• 1996

In this paper, the (S $r_{0.85}$.C $a_{0.15}$)Ti $O_{3}$ of paraelectric grain boundary layer (GBL) ceramics were fabricated, and the analysis of microstructuye and the thermally stimulated current(TSC) were investigated for understanding effects of GBL's interfacial phenomenon on variations of electrical properties. As a result, the three peaks of .alpha., .alpha. and .betha. were obtained at the temperature of -20 [.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20[.deg. C] appears to show up by detrap of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase. and second phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.207-210
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• 1998

Surface electrical conduction in insulator is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the widely used materials for outdoor insulator - porcelain, EPDM, Silicone rubber - were discussed by measuring properties of average leakage current and scintillation discharge pulses under artificial contamination conditions. The artificial contaminations used were deionized distilled water fog, 0.5wt% NaCl salt fog of light pollution and 2wt% NaCl salt fog of medium pollution. The average leakage current was appeared linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage was most different to that in case of dry and clean condition. In case of salt fog pollution condition. The leakage current was increased above critical voltage. The scintillation discharges were also activated at the level the leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.758-762
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• 1998

Electrical conduction property of insulator surface is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the materials to be used for outdoor insulator such as porcelain, EPDM, silicone rubber was discussed by measuring properties of average leakage current and scintillation discharge pulses under salt fog conditions. The fog was applied by nozzle in chamber and fogging fluids were deionized distilled water, 0.5wt% NaCI solution and 2wt% NaCl solution. The average leakage current showed linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage were much different to those in case of dry and clean condition with 2wt% salt fog. In case of slat fog pollution condition, the leakage current was increased above critical voltage. the scintillation discharges were also activated at the level. The leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.574-578
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• 2006

Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 77 K should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. Recently, research and development concerning application of the conduction-cooled HTS SMES that is easily movement are actively progressing in Korea. Electrical insulation under cryogenic temperature is a key and an important element in the application of this apparatus. Using multi wrapped copper by Polyimide film for HTS SMES, the breakdown characteristics of models for turn-to-turn, that is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on breakdown voltage under at and impulse voltage in $LN_2$ was carried.

• Journal of Electrical Engineering and Technology
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• v.12 no.3
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• pp.1156-1165
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• 2017

A high performance interleaved bridgeless boost power factor correction (PFC) rectifier operating under the critical current conduction mode (CrM) is proposed in this paper to improve the efficiency and system performance of various applications, such as nano-grid systems. By combining the interleaved technique with the bridgeless topology, the circuit contains two independent branches without rectifier diodes. The branches operate in interleaved mode for each respective half-line period. Moreover, when operating in CrM, all the power switches take on soft-switching, thereby reducing switching losses and raising system efficiency. In addition, the input current flows through a minimum amount of power devices. By employing a commercial PFC controller, an effective control scheme is used for the proposed circuit. The operating principle of the proposed circuit is presented, and the design considerations are also demonstrated. Simulations and experiments have been carried out to evaluate theoretical analysis and feasibility of the proposed circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.468-472
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• 2011

Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.934-937
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• 2003

Glasses in the system $CuO-P_2O_5-V_2O_5$ were prepared by a press-quenching method on the copper plate. The glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from $10^{-6}s.Cm^{-1}$ at room temperature, but the conductivities of the glass-ceramics were $10^{-3}s.Cm^{-1}$ increased by $10^3$ order. The crystalline product in the glass-ceramics was $CuV_2O_6$. Heat-treatment conditions influenced the crystal growth of $CuV_2O_6$ and conductivity. The linear relationship between in (${\sigma}T$) and $T^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.418-421
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• 2023

Multilayer Ceramic Capacitors (MLCCs) are essential passive components in the electronics industry, known for their high capacitance due to the multilayer structure comprising inner electrodes and dielectric layers. Nickel electrodes are commonly used in MLCCs as the inner electrodes, and to prevent oxidation during the co-firing of the dielectric layers with nickel electrodes, reducing atmosphere is required. However, reducing atmosphere sintering can also induce a reduction of the dielectric, necessitating precise control of oxygen partial pressure. To explore the possibility of using oxide electrodes that do not require reducing atmosphere sintering, we analyze the electrical properties of nickel oxide (NiO) as a potential candidate. As a preliminary study on its use as an alternative inner electrode, the correlation between microstructure and electrical properties of bulk NiO under different sintering conditions was investigated to gain insights into the conduction mechanisms of the material.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.87-87
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• 2011

Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.