• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.858-867
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• 2018

Analytical modeling equations are proposed for the conventional and modified three-section branch-line couplers. The analytical equations are explicit and capable of determining the characteristic impedance of each branch line for the coupler at desired coupling level as well as the suitability of broadband S-parameters analysis. In addition, a bandwidth extension and miniaturization of three-section branch-line coupler using slow-wave and meandering line structures were designed. The modified coupler, which is able to operate within frequencies from 1.5 to 3.32 GHz has been fabricated, tested and compared. A bandwidth extension of 600 MHz and 53% reduced size of the modified coupler have been achieved compared to a conventional coupler. The modified coupler has roughly insertion loss and coupling of -4 dB and -3.2 dB, while the isolation and return loss, respectively less than -14 dB with fractional bandwidth of 77 %, as well as phase imbalances less than $2^{\circ}$ over the operating bandwidth. Overall, the derived analytical model, simulation and measurement results demonstrated a good agreement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.178-183
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• 2014

Recently, various type of nanomaterials such as nanorod, nanowire, nanotube and their core/shell nanostructures have attracted much attention in photocatalyst due to their unique properties. Among them, Type-II core/shell heterostructures have extensively studied because it has exhibited improved electrical and optical properties against their single-component nanostructure. Such structures are expected to offer high absorption efficiency and fast charge transport due to their stepwised energetic combination and large internal surface area. Thus, it has been considered as potential candidates for high efficient photocatalytic activity. In this work, we introduce a novel chemical conversion process to synthesize Type-II ZnO/ZnSe core/shell heterostructures. A plausible conversion mechanism to ZnO/ZnSe core/shell heterostructres was proposed based on SEM, XRD, TEM and XPS analysis. The ZnO/ZnSe heterostructures exhibited excellent photocatalytic activity toward the decomposition of RhB dye compared to the ZnO nanorod arrays due to enhanced light absorption and the type-II cascade band structure.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Journal of Advanced Navigation Technology
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• v.17 no.5
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• pp.491-496
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• 2013

In this paper, a half-wavelength folded-slot antenna, which can be applied to RF module for 3G mobile communications by which security lights are monitored and controlled, is proposed. The proposed antenna can be regarded as modified folded-slot structure which has the size reduced to a half of conventional ${\lambda}g$ folded-slot antenna and can be placed at the ground plane edge. In spite of that, the proposed antenna still maintain the advantage of conventional folded-slot antenna that input impedance is close to $50{\Omega}$. The antenna is designed and fabricated within the upper space of $40.5{\times}10mm^2$ on $40.5{\times}62mm^2$ substrate for 3G mobile communication frequency band. The measured impedance bandwidth and antenna gain are 390 MHz and 2 dBi respectively.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.127-130
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• 1999

The magnetism and electronic structure of Ru monolayer with square lattice is investigated using the FLAPW band method. The dependence of total energies on the lattice constant was calculated for three magnetic states, i.e.,para-,ferro-, and antiferromagnetic ones. It was found that there is no energy difference between para-and antiferromagnetic states for all the lattice constant. The possibility of antiferromagnetism in square Ru monolayer is thus excluded. The ferromagnetic state is most stable for the lattice constants greater than 7.30 a.u. The energy minimum is found at the lattice constant of 6.53 a.u. Where it is paramagenetic. It is calculated that the magenetic moment is 2.49 ${\MU}_B$ at 7.72 a.u., which is close to the lattice constant of Ag. The magnetic moment is almost saturated to be ${\MU}_B$ at the lattice constant of 7.86 a.u.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.4
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• pp.763-770
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• 2021

In this paper, in order to exclude the influence of BAN(Body Area Network) signals operating in the ISM band, the design and optimization process of an on-body microstrip patch antenna operating at 4.567 GHz is presented. The antenna for the monitoring of the lower legs with cancellous osteoporosis is designed to be lightweight and compact with improved return loss and bandwidth. The structure around the applied lower leg consisted of a five-layer dielectric plane. Taking into account losses, the complex dielectric constant of each layer is calculated using multi Cole-Cole model parameters, whereas a unipolar model is used for normal or osteoporotic cancellous bones. The return loss of the coaxial feed antenna on the phantom is -67.26 dB at 4.567 GHz, and in the case of osteoporosis, at the same frequency the return loss difference is 35.88 dB, and the resonance frequency difference is about 7 MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• International Journal of Computer Science & Network Security
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• v.22 no.12
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• pp.245-251
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• 2022

In this paper, a high gain, broadband planar vivaldi antenna (PVA) by utilizing a broadband stripline feed is developed for wireless communication for IoT systems. The suggested antenna is designed by attaching a tapered-slot construction to a typical vivaldi antenna, which improves the antenna's radiation properties. The PVA is constructed on a low-cost FR4 substrate. The dimensions of the patch are 1.886λ₀×1.42λ₀×0.026λ₀, dielectric constant Ɛ_r=4.4, and loss tangent δ=0.02. The width of the feed line is reduced to improve the impedance bandwidth of the antenna. The computed reflection coefficient findings show that the suggested antenna has a 46.2% wider relative bandwidth calculated at a 10 dB return loss. At the resonance frequencies of 6.5 GHz, the studied results show an optimal gain of 5.82 dBi and 85% optimal radiation efficiency at the operable band. The optometric analysis of the proposed structure shows that the proposed antenna can achieve wide enough bandwidth at the desired frequency and hence make the designed antenna appropriate to work in satellite communication and medical internet of things (M-IoT) healthcare applications.