• 제목/요약/키워드: Electronic Transport Data

검색결과 131건 처리시간 0.024초

로테르담 규칙의 운송서류 전자화에 대한 영향 평가 (Evaluation on the Impact of the Rotterdam Rules on Facilitating the Use of Electronic Transport Reocrds)

  • 서백현
    • 무역상무연구
    • /
    • 제75권
    • /
    • pp.71-94
    • /
    • 2017
  • The Rotterdam Rules is the first international maritime carriage of goods Convention that acknowledge electronic records of contracts of carriage. The Rules have developed separate chapter in relation to electronic transport records' issuing, transfer, etc. This paper aims to evaluate Rotterdam Rules' contribution to the use of electronic transport records. To achieve the aims firstly this paper have examined the related articles of Rotterdam Rules, Secondly in practical aspects, this paper explores the opportunities and obstacles which could be happened in practical procedures, applicable to transport industry, shipper and holder of electronic transport records. Findings could be summarized as follows, first the Rules shows high acceptability to whom it may involved in transport industry by simplify the contents of the Rules to avoid conflict with each countries' national laws. The Rules acknowledge the functional equivalence between paper and electronic transport records in specific provisions. This could be important development to facilitate the use of electronic transport records. But the Rules have not mentioned liability limit of transport industry when the problems arise from issuing, tele-transmission, transfer of the records. And the secure of the functional equivalence between paper and electronic transport records also could be remained in uncertain regime due to different stance of each national laws.

  • PDF

유기발광 소자의 수송층 두께 변화에 따른 발광효율 연구 (Study of OLED luminescence efficiency by Hole Transport layer change)

  • 이정호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
    • /
    • pp.1002-1006
    • /
    • 2004
  • The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

  • PDF

SF$_6$+$N_2$혼합기체의 전자 이동속도 측정 및 수송계수 해석 (The measurement of electron drift velocity and analysis of transport coefficients in SF$_6$+$N_2$ gas)

  • 하성철;하영선
    • E2M - 전기 전자와 첨단 소재
    • /
    • 제7권6호
    • /
    • pp.462-472
    • /
    • 1994
  • In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

  • PDF

Reverse-bias Leakage Current Mechanisms in Cu/n-type Schottky Junction Using Oxygen Plasma Treatment

  • Kim, Hogyoung
    • Transactions on Electrical and Electronic Materials
    • /
    • 제17권2호
    • /
    • pp.113-117
    • /
    • 2016
  • Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. VP possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

디지털 방송 서비스에서 트랜스포트 스트림 분석 및 파싱 능력 향상에 관한 연구 (A Study on Transport Stream Analysis and Parsing Ability Enhancement in Digital Broadcasting and Service)

  • 김장원
    • 한국정보전자통신기술학회논문지
    • /
    • 제10권6호
    • /
    • pp.552-557
    • /
    • 2017
  • 유 무선 디지털 방송이 고화질 TV의 탄생과 함께 2010년 이후로 급격하게 확산되었으며, 단방향 콘텐츠 이용뿐만 아니라 양방향 콘텐츠 이용이 급격하게 증가되고 있다. 현재 우리나라 위성 통신망에서는 유럽 디지털 방송 표준화기구의 DVB를 국내 데이터 방송의 표준으로 채택하고 있으며, IPTV의 발전에 의해 선택적 콘텐츠의 이용방법도 또한 다양하게 연구되었다. 디지털 방송에서는 MPEG-2 system의 비디오, 오디오, 그리고 데이터 등의 멀티미디어 정보를 전송하기 위해 정보를 다중화 하는 방식으로 Transport Stream Packet(TSP)을 이용한 방식을 사용하는데, 이 Stream에는 비디오, 오디오 정보는 물론, TV 편성표와 프로그램에 대한 상세한 정보까지도 포함되어 있다. 본 연구에서는 이러한 데이터 방송 시스템을 이해하기 위하여 Linux 환경에서 Transport Stream(TS)을 Packet별로 구분하고 각각의 기능별로 분석, 출력해주는 TS Analyzer를 구현하였으며, TS의 이해를 돕고 Stream Parsing 능력향상을 이룰 수 있었다.

Kalman Filtering-based Traffic Prediction for Software Defined Intra-data Center Networks

  • Mbous, Jacques;Jiang, Tao;Tang, Ming;Fu, Songnian;Liu, Deming
    • KSII Transactions on Internet and Information Systems (TIIS)
    • /
    • 제13권6호
    • /
    • pp.2964-2985
    • /
    • 2019
  • Global data center IP traffic is expected to reach 20.6 zettabytes (ZB) by the end of 2021. Intra-data center networks (Intra-DCN) will account for 71.5% of the data center traffic flow and will be the largest portion of the traffic. The understanding of traffic distribution in IntraDCN is still sketchy. It causes significant amount of bandwidth to go unutilized, and creates avoidable choke points. Conventional transport protocols such as Optical Packet Switching (OPS) and Optical Burst Switching (OBS) allow a one-sided view of the traffic flow in the network. This therefore causes disjointed and uncoordinated decision-making at each node. For effective resource planning, there is the need to consider joining the distributed with centralized management which anticipates the system's needs and regulates the entire network. Methods derived from Kalman filters have proved effective in planning road networks. Considering the network available bandwidth as data transport highways, we propose an intelligent enhanced SDN concept applied to OBS architecture. A management plane (MP) is added to conventional control (CP) and data planes (DP). The MP assembles the traffic spatio-temporal parameters from ingress nodes, uses Kalman filtering prediction-based algorithm to estimate traffic demand. Prior to packets arrival at edges nodes, it regularly forwards updates of resources allocation to CPs. Simulations were done on a hybrid scheme (1+1) and on the centralized OBS. The results demonstrated that the proposition decreases the packet loss ratio. It also improves network latency and throughput-up to 84 and 51%, respectively, versus the traditional scheme.

Optimization of the Profiles in MeV Implanted Silicon Through the Modification of Electronic Stopping Power

  • Jung, Won-Chae
    • Transactions on Electrical and Electronic Materials
    • /
    • 제14권2호
    • /
    • pp.94-100
    • /
    • 2013
  • The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

유기발광 소자의 수송층 두께 변화에 따른 수치적 해석 (Numerical Analysis of OLED Luminescence Efficiency by Hole Transport Layer Change)

  • 이정호
    • 한국전기전자재료학회논문지
    • /
    • 제17권12호
    • /
    • pp.1341-1346
    • /
    • 2004
  • The OLED research is gone for two directions. One is material development research, and another one is structural improvement part. All two are thing to heighten luminescence efficiency of OLED. n other to improve luminescence efficiency of OLED Electron - hole pairs must consist much more in the device Their profiles are sensitive to mobility velocity of electrons and holes. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We suggest improving the efficiency of OLEDS would be to balance the injection of electrons and holes into light emission layer of the device. And, we improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in variable hole carrier transport layer's thickness.

몬테칼로법을 이용한 Ar기체의 전자수송계수에 관한 연구 (A study on the electron transport coefficients using monte carlo method in argon gas)

  • 하성철;전병훈
    • E2M - 전기 전자와 첨단 소재
    • /
    • 제8권6호
    • /
    • pp.685-692
    • /
    • 1995
  • The electron transport coefficients in argon gas is studied over the range of E/N values from 85 to 566 Td by the Monte Carlo method considering the latest cross section data. The result of the Monte Carlo method analysis shows that the value of the electron transport coefficients such as the electron drift velocity, the ratio of the longitudinal and transverse diffusion coefficients to the mobility. It is also found that the electron transport coefficients calculated by the two-term approximation analysis agree well with those by Monte Carlo calculation. The electron energy distributions function were analysed in argon at E/N=283, and 566 Td for a case of the equilibrium region in the mean electron energy. A momentum transfer cross section for the argon atom which was consistent with both of the present electron transport coefficients was derived over the range of mean electron energy from 10.3 to 14.5 eV, also suggested as a set of electron cross section for argon atom. The validity of the results obtained has been confirmed by a Monte Carlo simulation method.

  • PDF

시뮬레이션에 의한 $SF_6-N_2$ 혼합기체의 전자수송특성 (Electron Transport Characteristic in $SF_6-N_2$ Mixture Gases by MCS-BEq Simulation)

  • 김상남
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
    • /
    • pp.507-508
    • /
    • 2006
  • $SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

  • PDF