• 제목/요약/키워드: Electronic Material Use

검색결과 887건 처리시간 0.022초

몬테카를로 시뮬레이션을 이용한 X선 변환물질의 특성 연구 (Characteristic Study of X-ray convert material by Monte Carlo Simulation)

  • 김진영;박지군;강상식;김소영;정은선;남상희;강신원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.418-421
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    • 2003
  • Today, much terminologies such as noise spectrum, Sharpness, contrast, MTF had been defined for Image quality revaluation of radiation Image. Since development of Xeroradiography In the 1970s, Digital radiation detector that use amorphous selenium was developed. The aim of this research is to analyze physical phenomenon of digital radiation detector that use amorphous selenium. Result of Monte Carlo simulations on amorphous selenium based on physical properties(creation of electron-hole pairs) by induced x-ray are described. From the simulation, intrinsic point spread function(PSF) was found and used to observe modulation transfer function(MTF). We investigated how PSF and MTF changed with various x-ray energy. This result can be used to design digital x-ray detector based on a-Se.

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복합구조의 압전 에너지 하베스터를 위한 공정연구 (Processing Study for the Piezoelectric Energy Harvest of Composit Structure)

  • 이경수;신동진;고중혁
    • 한국전기전자재료학회논문지
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    • 제25권4호
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    • pp.286-289
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    • 2012
  • In this paper, we have proposed piezoelectric energy harvester employing the pillar structure with the diameter size of 500 um. So we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the $500{\mu}m$. Simultaneously, we tried to make a comparative study to use ceramic bulk - polymer structure In this paper, we will report the process and properties of micro pillar structure based on the PMN-PZT ($Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrTiO_3$) materials. Finally, We will propose a method for generating electrical energy with a piezoelectric element using vibration, an energy source can be obtained from the "clean" energy.

3전극형 반사형 디스플레이의 단일컬러 구현 및 구동방법 (Single Color Realization and Driving Method of Three-Electrode Type Reflective Display)

  • 이상일;김영조
    • 한국전기전자재료학회논문지
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    • 제28권2호
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    • pp.109-114
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    • 2015
  • We realize a color reflective display without any color filter and sub-pixelation concept, by which the full or single color realization is basically impossible. In this study, we use a 3-electrode on the lower substrate with indium tin oxide (ITO) glass. The width of a rib is $30{\mu}m$, a cell size is $150{\mu}m{\times}150{\mu}m$, and the space of lower electrodes is $10{\mu}m$. To get the single color, we drive this panel by a identical algorithm based on the movement of charged particle in color fluid within a cell with hermetic seal. According to the driving method, the lifetime of panel is different.

CuPc 유도체를 사용한 OFET의 전기적 특성 연구 (Electrical Properties of CuPc Field-effect Transistor Using CuPc Derivate Material)

  • 이호식;박용필;천민우;김태곤;김영표
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.279-280
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    • 2009
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

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A Study on the Thermal, Electrical Characteristics of Ge-Se-Te Chalcogenide Material for Use in Phase Change Memory

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • 제9권6호
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    • pp.223-226
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    • 2008
  • $Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

ZnO 세라믹 바리스터의 미세구조에 미치는 $TiO_2$의 영향 (Influence of $TiO_2$ Addition on Microstructure of ZnO Ceramic Varistor)

  • 소병문;홍진웅
    • 한국전기전자재료학회논문지
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    • 제11권3호
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    • pp.214-220
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    • 1998
  • ZnO varistors are characterized by the features of excellent nonlinearity and surge withstand capability. In this paper, in order to investigate the use of ZnO varistor as surge absorption device in low voltage, metal oxide material($TiO_2$) was selected as control material of grain growth. Samples of ZnO varistors were fabricated with varying the contents, and then the microstructures and V-I characteristics were measured. It was observed by SEM that the mean grain size increased with the increase of the additive. From the measurement of V-I characteristics, it was observed that according to the increase of the quantity of $TiO_2$ as additive, the operating voltage was lowered.

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탄성체의 크기 변화에 따른 L1-B4형 초음파 리니어 모터의 구동 특성 (Driving Characteristic of L1-B4 Type Ultrasonic Linear Motor by Varying the Size of Elastic Material)

  • 김행식;박태곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.93-96
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    • 2004
  • An ultrasonic linear motor was composed of a slider and a stator vibrator including piezoelectric material and elastic material. The ultrasonic linear motors mainly consist of an ultrasonic vibrator which generates elliptical oscillations. L1-B4 ultrasonic linear motor use longitudinal and bending multi-vibration. In order to design stators which has high efficiency and driving characteristics, The finite element method was used to optimize dimension of ultrasonic vibrator and direction of vibratory displacement. stator vibrator of respectively width 3, 5, 7[mm] was fabricated and experimented. as results When width was 5[mm], the driving characteristics was good.

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The Elimination Characteristics by Impressed Voltage of Holography Grating in Chacogenide Thin Film

  • Lee Ki-Nam;Yeo Cheol-Ho;Yang Sung-Jun;Chung Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • 제5권6호
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    • pp.219-222
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    • 2004
  • This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

초음파 리니어 모터의 구동특성 (Driving characteristic of ultrasonic linear motor)

  • 김태열;김범진;박태곤;김명호;권오영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.204-207
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    • 2000
  • An ultrasonic linear motor was composed of a slider and a stator vibrator including piezoelectric material and elastic material. The ultrasonic linear motors mainly consist of an ultrasonic vibrator which generates elliptical oscillations. L$_1$-B$_4$ ultrasonic linear motor use longitudinal and bending multi-vibration. In order to low driving voltage and improve the life time of the ultrasonic oscillator, we used stacked piezoceramics. Stacked piezoceramics are adhered to aluminum elastic material. The finite element method was used to optimize dimension of ultrasonic vibrator and direction of vibratory displacement. As a result of estimating the characteristics of the ultrasonic linear motor, no-load velocity was 2.04[m/s] when applied voltage was 70[V$\sub$rms/] in resonance frequency.

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Sb 광도핑에 의한 Ge1Se1Te2 박막의 상변화 메모리 특성 (The Phase-change Memory Characteristics of Ge1Se1Te2 Thin Films for Sb Photo Doping)

  • 남기현;김장한;정홍배
    • 한국전기전자재료학회논문지
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    • 제25권5호
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    • pp.329-333
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    • 2012
  • For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.