Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Phase-change Memory Characteristics of Ge1Se1Te2 Thin Films for Sb Photo Doping

Sb 광도핑에 의한 Ge1Se1Te2 박막의 상변화 메모리 특성

  • Nam, Ki-Hyun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Jang-Han (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 남기현 (광운대학교 전자재료공학과) ;
  • 김장한 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Received : 2012.03.16
  • Accepted : 2012.03.26
  • Published : 2012.05.01
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Abstract

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

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