• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• ETRI Journal
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• v.33 no.4
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• pp.645-647
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• 2011

In this study, a microcapillary pumped loop (MCPL) that can be used as a cooling device for small electronic and telecommunications equipment has been developed. For thin devices such as an MCPL, securing a vapor flow space is a critical issue for enhancing the thermal performance. In this letter, such enhancement in thermal performance was accomplished by eliminating condensed droplets from the vapor line. By fabricating the grooves in the vapor line to eliminate droplets, a decrease in thermal resistance of about 63.7% was achieved.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.67-71
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• 2015

Product of technology developed in this study is an external interface for controlling the equipment of pendant key remote control system circuit board, and it is used in the electronic component test equipment system. Main control system module is in the role as a device for controlling the various control devices that make up the integrated system for microscopic examination at the request of the host computer engineers to control the inspection equipment. The pentane-key interface module to its role as a device for controlling the various control devices that make up the integrated system for microscopic examination at the request of the host computer for the engineer to control the inspection equipment. Development of the control system can be expected in the configuration of a system for efficient and accurate inspection of high-precision parts.

• Proceedings of the KSRS Conference
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• 2003.11a
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• pp.1121-1123
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• 2003

The CCD (Charge coupled device) detector that is used to convert the light into electronic data is very important component in satellite camera. A Linear CCD Spectral detector shall be used in the MSC (Multi-Spectral Camera, to obtain data for high-resolution images) Payload. In this paper, the design concept of the CCD detector control module in the MSC CEU (Camera electronic unit) system which will be a payload on KOMPSAT is described in terms of H/W (clock speed and accuracy).

• Journal of the Optical Society of Korea
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• v.6 no.2
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• pp.27-32
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• 2002

An integrated optical 2$\times$2 add/drop multiplexer in X-cut, Y-propagating LiNbO$_3$ has been demonstrated. The device consists of passive polarization splitters and acousto-optical mode converters with weighted coupling utilizing tapered acoustical directional couplers; their specific design and properties are discussed. The insertion loss has been measured to be about -8.16 ㏈ and -8.6 ㏈ for TE and TM polarizations, respectively. The device shows a 3 ㏈ bandwidth of 2.3 nm, a tuning rate 8.34 nm/MHz around λ = 1554 nm, and a sidelobe suppression of about 14.5 ㏈. Optimum operation is achieved with a RF drive power of about 43 ㎽. Multi-wavelength operation has been demonstrated.

• Annual Conference of KIPS
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• 2019.05a
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• pp.178-181
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• 2019

IoT 기술은 대규모의 IoT 네트워크가 디바이스들로부터 수집되는 데이터들을 이용해 서비스를 제공하는 기술이다. 이러한 IoT 네트워크는 디바이스 상호 간 연결되어 있어 네트워크에 포함 되어있는 하나의 디바이스가 가지고 있는 취약점을 이용하면 IoT 네트워크 전체가 공격받을 수 있다. 따라서, IoT 디바이스는 사양의 높고 낮음에 관계없이 전체 네트워크의 보안 수준에 맞추어 보안 강도를 보장받아야 한다. 본 논문에서는 근래에 새롭게 제시된 "디바이스 DNA"를 이용하여 새로운 디바이스 인증 기술을 개발하는 것에 초점을 맞추어, "디바이스 DNA"로 디바이스 상에서 측정되는 Wi-Fi 신호강도(RSSI; Received Signal Strength Indication)를 사용할 수 있는 가능성을 보인다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.555-558
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• 2004

The efficiency of electron injection from the cathode is strongly dependent on the thickness of the LiF buffer-layer. We used LiF to electron Injection layer. We compared characteristics of organic light emitting device changing LiF thin film thickness from 1.0 m to 10.0 nm. Experiment result, we found that LiF thickness has the optimized electrical characteristics in 3.0 m. In this paper, we did research about electrical characteristics of organic light emitting device by LiF thickness change using method numerical analysis method. We proved adequate experimental results that compare results of numerical analysis, and come out through an experiment results is validity.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.159-160
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• 2018

본 논문에서는 인덕션 쿠커의 토폴로지 중 하나인 직렬 공진 하프-브릿지 컨버터에 Wide-Bandgap 전력 반도체를 적용하여 전력 손실을 평가한다. 전력 반도체의 발전으로 Si-기반의 전력반도체를 대체할 GaN과 SiC의 Wide-Bandgap 소자들이 양산되고 있다. Wide-Bandgap 소자의 장점은 고주파수에서의 동작과 낮은 손실에 있다. 이에 인덕션 쿠커의 직렬 공진 하프-브릿지 컨버터에 Wide-Bandgap 전력반도체를 적용하여 전력 손실을 PSIM Thermal Module을 통해 평가하고 인덕션 쿠커에 적합한 소자를 선정한다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.400-406
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• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.