• Title/Summary/Keyword: Electronic Device

Search Result 4,576, Processing Time 0.039 seconds

Design of Embedded System for Controlling Condensation System of the car

  • Lee, Dmitriy;Nam, Hyo-Duk;Seo, Hee-Don
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
    • /
    • 2007.06a
    • /
    • pp.281-286
    • /
    • 2007
  • Road traffic accidents kill more than one million people a year. ESCC represents a new device, that hasn't any analogue. This embedded system, heats the car glasses, when it's needed, that makes more safety driving. It's build on Atmega128L CPU, using high-performance EEPROM CPLD ATF1504AS. Source code was written in C language. Algorithm of work was written by dew-point table. This system is not only clearing the glass from condensation, but averts condensation. ESCC began working, when input information became close to dew-point table information. Thankful this device, field of view is more widely, that increase safety level.

  • PDF

Epitaxial Layer Design for High Performance GaAs pHEMT SPDT MMIC Switches

  • Oh, Jung-Hun;Mun, Jae-Kyoung;Rhee, Jin-Koo;Kim, Sam-Dong
    • ETRI Journal
    • /
    • v.31 no.3
    • /
    • pp.342-344
    • /
    • 2009
  • From a hydrodynamic device simulation for the pseudomorphic high electron mobility transistors (pHEMTs), we observe an increase of maximum extrinsic transconductance and a decrease of source-drain capacitances. This gives rise to an enhancement of the switching speed and isolation characteristics as the upper-to-lower planar-doping ratios (UTLPDR) increase. On the basis of simulation results, we fabricate single-pole-double-throw transmitter/receiver monolithic microwave integrated circuit (MMIC) switches with the pHEMTs of two different UTLPDRs (4:1 and 1:2). The MMIC switch with a 4:1 UTLPDR shows about 2.9 dB higher isolation and approximately 2.5 times faster switching speed than those with a 1:2 UTLPDR.

  • PDF

A Study on the Mechanism of Photoluminescence in Poly(3-hexylthiophene) (Poly(3-hexylthiophene)의 PL 발광 메카니즘에 관한 연구)

  • 김주승;서부완;구할본
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.2
    • /
    • pp.133-138
    • /
    • 2001
  • We studied the optical properties of poly(3-hexylthiophene) for applying to the emitting material of organic electro luminescent device. The infrared spectrum and NMR of synthesized polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. We confirmed that poly(3-hexylthiophene) contains the HT(head-to-tail)-HT(head-to-Tail) linkage larger than 65% based on NMR analysis. FTIR and raman spectroscopy show that poly(3-hexylthiophene) has two main vibration levels which have an energy about 0.18eV and 0.36eV. Electronic absorption spectra shifted to the shorter wavelength with increasing temperature, which is related to a conformational transition of the polymer. Photoluminescence spectrum generated at low temperature(10K) is separated at 669nm, 733nm and 812nm that it's because of phonon energy generated from the lattice vibration.

  • PDF

Measurement error reduction technique for the Semiconductor Device DC Characteristic Measurement System (반도체 소자의 직류특성 측정 시스템에서의 저전류 측정 오차 감소 기법)

  • Choi, In-Kyu;Jung, Hae-Yone;Park, Jong-Sik
    • Proceedings of the KIEE Conference
    • /
    • 2001.11c
    • /
    • pp.352-355
    • /
    • 2001
  • In this paper, we proposed measurement error reduction technique for the semiconductor device DC characteristic measurement system. Implemented system is composed of 4 SMUs, 2 VSUs, and 2 VMUs. Various efforts in hardware and software have been made to reduce the measurement errors due to the leakage current in measurement circuits. Internal and external sources of errors in measurement system especially in pA range measurement have been identified and removed. Experimental results show that the implemented system can be measure the DC characteristic of semiconductor devices in pA level.

  • PDF

A Study on Powder Electroluminecscent Device for High Brightness (고휘도 후막 전계발광소자에 관한 연구)

  • Oh, Joo-Youl;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the KIEE Conference
    • /
    • 1998.07d
    • /
    • pp.1382-1384
    • /
    • 1998
  • Electroluminescence is occurred when phosphor is located in electric field. Object of this research show new type of powder electroluminescent device (PELD) for high brightness compared with conventional PELD. New type of PELD structured as follow ITO/phosphor + dielectric/Silver paste). To investigate optical properties of PELDs, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in new type of PELD was 7:3(phosphor:dielectric). At 200 V 400 Hz, new type of PELD which had ratio of 7:3 was 5700 cd/$m^2$.

  • PDF

A Study on the Hot Carrier Effect Improvement by HLDBD (High-temperature Low pressure Dielectric Buffered Deposition)

  • Lee, Yong-Hui;Kim, Hyeon-Ho;Woo, Kyong-Whan;Kim, Hyeon-Ki;Yi, Jae-Young;Yi, Cheon-Hee
    • Proceedings of the IEEK Conference
    • /
    • 2002.07b
    • /
    • pp.1042-1045
    • /
    • 2002
  • The scaling of device dimension and supply voltage with high performance and reliability has been the main subject in the evolution of VLSI technology, The MOSFET structures become susceptible to high field related reliability problems such as hot-electron induced device degradation and dielectric breakdown. HLDBD(HLD Buffered Deposition) is used to decrease junction electric field in this paper. Also we compared the hot carrier characteristics of HLDBD and conventional.

  • PDF

Graphene Based Nano-electronic and Nano-electromechanical Devices

  • Lee, Sang-Wook
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.13-13
    • /
    • 2011
  • Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

  • PDF

Joint Mode Selection and Resource Allocation for Device-to-Device Communication Underlaying OFDMA Cellular Networks (OFDMA 셀룰러 네트워크에서의 D2D 통신을 위한 모드 선택 및 자원 할당 기법)

  • Kim, Taehyoung;Min, Kyungsik;Choi, Sooyong
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.39A no.10
    • /
    • pp.622-624
    • /
    • 2014
  • In this letter, the joint mode selection and resource allocation method is proposed for D2D communication underlaying OFDMA based cellular networks. In the proposed scheme, D2D mode possible region is determined which satisfies QoS. Then we solve the optimization problem utilizing primal-dual algorithm. The proposed scheme shows better performance than conventional schemes.

Design and Implementation of Inter-IC Bus Interface for Efficient Bus Control in the Embedded System (임베디드 시스템에서 효율적인 주변장치 관리를 위한 Inter-IC Bus Interface 설계 및 구현)

  • Seo, Kyung-Ho;Seong, Kwang-Su;Choi, Eun-Ju
    • Proceedings of the IEEK Conference
    • /
    • 2006.06a
    • /
    • pp.535-536
    • /
    • 2006
  • In the embedded system, external device interface that operates serial protocol with lower speed than the general computers is used commonly. This paper describes I2C bus protocol that is a bi-directional serial bus with a two-pin interface. The I2C bus requires a minimum amount of hardware to relay status and reliability information concerning the processor subsystem to an external device.

  • PDF

Performance-Based EMC Design Using a Maximum Radiated Emissions Calculator

  • Hubing, Todd H.
    • Journal of electromagnetic engineering and science
    • /
    • v.13 no.4
    • /
    • pp.199-207
    • /
    • 2013
  • Meeting electromagnetic compatibility (EMC) requirements can be a significant challenge for engineers designing today's electronic devices. Traditional approaches rely heavily on EMC design rules. Unfortunately, these design rules aren't based on the specific EMC requirements for a particular device, and they don't usually take into account the specific function of the circuits or the many design details that will ultimately determine whether the device is compliant. This paper describes a design methodology that relates design decisions to the product's EMC requirements. The goal of performance-based EMC design is to ensure that electronic designs meet EMC requirements the first time the product is tested. More work needs to be done before this concept reaches its full potential, but electronic system designers can already derive significant benefit by applying this approach to products currently under development.