• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.10
• /
• pp.943-949
• /
• 2008

We report on the development of transition edge sensors for x-ray detection. The sensor technology was based on the fabrication of a superconducting film on a thin membrane. A bilayer of a superconductor, Ti, and a noble metal, Au, was e-beam evaporated on a micromachined SiNx. Another Au layer was evaporated on the two side edges of the bilayer in order not to be affected by structural imperfections at the boundaries. With the method described in the present report, the superconducting transition temperature of the device was consistently achieved to near 80 mK with a sharp transition. The energy spectrum ueasured with the device provided 37 eV FWHM for 5.9 x-rays. We also discuss the design and fabrication considerations as well as the performance of the device in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.351-352
• /
• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.2
• /
• pp.114-118
• /
• 2013

In this study, coupled mode piezoelectric devices for AE sensor application with excellent displacement and piezoelectric characteristics were simulated using ATILA FEM program, and then fabricated. Displacements and electromechanical coupling factors of the piezoelectric devices were investigated. The simulation results showed that excellent displacement and electromechanical coupling factor were obtained when the ratio of diameter/thickness was 1.0. The piezoelectric device of ${\Phi}/T$= 1.0 exhibited the optimum values of fr= 406 kHz, displacement= $6.11{\times}10^{-8}[m]$, $k_{eff}$= 0.648. The results show that the coupled vibration mode piezoelectric device is a promising candidate for the application of AE sensor piezoelectric device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.11
• /
• pp.720-724
• /
• 2016

Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.63-66
• /
• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• Proceedings of the KSME Conference
• /
• 2002.08a
• /
• pp.725-728
• /
• 2002

A separate type thermosyphon can be utilized as a cooling device of electronic equipments (such as CPU of a personal computer or notebook). This study was carried out to investigate the cooling effect of separate type thermosyphon and to find the adequate parameters affecting the separate type thermosyphon. The heat transfer characteristics of separate type thermosyphon were obtained from experimental results. A $50{\times}50{\times}2 mm$ heat source was copied after CPU for the experiments. The results indicate that the device is capable of dissipating 60W of thermal energy and keeping the heat plate surface temperature under 50'E and the device can transfer heat from the evaporator to the condenser through natural circulation (without any external driving forces). Some transport phenomena of the working fluid and the heat transfer characteristics of the loop were observed in the experiments and are discussed in detail below.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.5
• /
• pp.467-470
• /
• 2007

Application field of neutron beam is very broad including industry, medicine and science. But the research and development and use of neutron beam is restricted within in narrow limits in this country, because neutron beam facility is insufficient - a big research facility of nuclear reactor(HANARO) and some small industrial facilities which use radioisotope neutron source are available. This paper compare and investigate the results of experiment and numerical analysis of the discharge in the spherically convergent beam fusion device which were expected as a portable neutron source. The spherically convergent beam fusion device will offer stability in neutron production, possibility of movement for convenience, low construction cost and higher neutron flux than radioisotope neutron source. The star mode discharge which efficiently generate neutron, were observed at both results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.21-22
• /
• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AlGaN/GaN SBD showed high forward current of 88.61 mA at 3.5 V while that of the conventional device was 14.1 mA at the same condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.3
• /
• pp.255-259
• /
• 2008

Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.221-225
• /
• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate