• 제목/요약/키워드: Electronic Device

검색결과 4,555건 처리시간 0.038초

SAW device를 이용한 900MHz 대역 수동형 RFID system의 인식거리 향상 연구 (Improve distance of Passive RFID system for 900MHz Using SAW device)

  • 박주용;김재권;김경환;여준호;범진욱
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.975-976
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    • 2006
  • The passive type RFID (Radio Frequency Identification) System using Surface Acoustic Wave (SAW) tag at 900 MHz in the range of more than 1 m was fabricated. To improve interrogation range of the system propose a method to increase isolation between transmitter and receiver. This method using a direct conversion architecture achieves a leakage rejection of 10 dB increased compared with conventional system. Measured interrogation range is more than 1 m.

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측면 연마 광섬유를 이용한 용액의 광학 특성 측정 (Measurement of Optical Properties of a Liquid Based on a Side-polished Optical Fiber)

  • 이현진;김광택
    • 한국전기전자재료학회논문지
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    • 제27권3호
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    • pp.195-198
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    • 2014
  • In this paper, a measurement method to obtain the optical properties of a liquid base on a side-polished single mode fiber was proposed and demonstrated. The device showed periodic resonance coupling against wavelengths. The refractive index and dispersion characteristics of a liquid were calculated by use of the spacings of periodic resonance wavelengths of the device. The thermo-optic coefficient of the liquid was obtained by monitering the shift of resonance wavelengths of the devices with change of environmental temperature.

Characteristics of a Tunable Microstrip Bandpass Filter Under the Influence of Magnetic Field

  • Chow, Hwang-Cherng;Chatterjee, P.;Lin, Kuei-Hung;Feng, Wu-Shiung
    • Journal of Magnetics
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    • 제22권2호
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    • pp.275-280
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    • 2017
  • A magnetic-field tunable 2.4 GHz microwave bandpass filter having insertion loss < -5dB on an FR4 substrate with the flaky magnetic material was designed and characterized. The tunability in the designed bandpass filter was achieved by adhering soft magnetic materials on top of the device. This soft magnetic material can be composed of ferromagnetic substance or ferrimagnetic substance. The performance of the designed bandpass filter under its influence is investigated. The frequency offset ratio changes over 30 %. There is over 20 % change in the center frequency towards the lower frequency region due to this application. These magnetic material layers achieved the center frequency shift and bandwidth extension without actually changing the original structure of the device.

An optical micro-magnetic device: magnetic-spatial light modulator

  • Inoue, Mitsuteru;Cho, J.K.;Park, J.H.;Uchida, H.;Nishimura, K.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.13-13
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    • 2002
  • A Spatial light modulator (SLM) is a real-time programmable device having the modulation function of the amplitude, phase or polarization of an optical wavefront as a function of position via electrical or optical control signals. Various types of reusable SLMs with two-dimensional pixel arrays are centrally important devices in volumetric recording, data processing, pattern recognition, optical computer and other optical system. (omitted)

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Influence of Emitter Width on the Performance of 975-nm (In,Ga)(As,P)/(Al,Ga)As High-power Laser Diodes

  • Yang, Jung-Tack;Kim, Younghyun;Pournoury, Marzieh;Lee, Jae-Bong;Bang, Dong-Soo;Kim, Tae-Kyung;Choi, Woo-Young
    • Current Optics and Photonics
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    • 제3권5호
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    • pp.445-450
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    • 2019
  • The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation's accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and $90{\mu}m$. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

할라이드 페로브스카이트 소재를 이용한 전자 소자에 관한 리뷰 (A Review of Electronic Devices Based on Halide Perovskite Materials)

  • 박형기;양정엽
    • 한국전기전자재료학회논문지
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    • 제37권5호
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    • pp.519-526
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    • 2024
  • This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.

비휘발성 메모리 적용을 위한 $SiO_2/Si_3N_4/SiO_2$ 다층 유전막과 $HfO_2$ 전하저장층 구조에서의 열처리 효과 (Effect of heat treatment in $HfO_2$ as charge trap with engineered tunnel barrier for nonvolatile memory)

  • 박군호;김관수;정명호;정종완;정홍배;조원주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.24-25
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    • 2008
  • The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

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RTA 방법에 의해 Zn 도핑된 InP의 오믹저항 특성연구 (Study on Ohmic resistance of Zn-doping InP using RTA method)

  • 김효진;김인성;김태언;김상택;김선훈;기현철;이경민;양명학;고항주;김회종
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.237-238
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    • 2008
  • 본 연구에서는 APD 소자 제작시 주로 쓰이는 RTA에 의한 Zn 확산방법에 사용할 경우 undoped InP의 V/III비율에 따른 Zn원자의 확산, 도핑, 오믹저항의 성장을 조사하였다. RTA에 의한 확산 및 활성화 열처리 시 도핑 농도의 프로파일은 확산열처리만 한 경우보다 활성화 처리한 경우 더 커짐을 볼 수 있었다. SIMS 결과 활성화 처리 후 표면쪽에 Zn원자의 약간의 결핍현상을 보이는 데 이는 표면쪽에 Zn원자의 탈착이 약간 이루어지는 것으로 보인다. 이 원인은 결과적으로 오믹저항의 증가를 가져왔다.

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분자전자기구의 제작을 위한 유기물의 성질에 관한 기호 연구 (Fundamental Study on the Properties of Organic Molecules for the Preparation of Molecular Electronic Device.)

  • 신동명
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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    • pp.19-20
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    • 1989
  • The Orientation and distribution of stilbenes and azobenzenes in bilayer membranes are disoussed. The micropolarity that the organic molecules experience is rather polar.

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