DOI QR코드

DOI QR Code

A Review of Electronic Devices Based on Halide Perovskite Materials

할라이드 페로브스카이트 소재를 이용한 전자 소자에 관한 리뷰

  • Hyeong Gi Park (The Institute of Basic Science, Kunsan National University) ;
  • Jungyup Yang (Department of Energy Science and Engineering, Kunsan National University)
  • 박형기 (군산대학교 기초과학연구소) ;
  • 양정엽 (군산대학교 에너지신산업학부)
  • Received : 2024.05.09
  • Accepted : 2024.05.29
  • Published : 2024.09.01

Abstract

This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.

Keywords

Acknowledgement

이 성과는 2023년 종부(과학기술정보통신부)의 재원으로 한국연구재단의 국가반도체연구실 지원을 받아 수행된 연구입니다 (RS-2023-00281286).

References

  1. L. M. Herz, ACS Energy Lett., 2, 1539 (2017). doi: https://doi.org/10.1021/acsenergylett.7b00276
  2. J. Shamsi, A. S. Urban, M. Imran, L. De Trizio, and L. Manna, Chem. Rev., 119, 3296 (2019). doi: https://doi.org/10.1021/acs.chemrev.8b00644
  3. C. Otero-Martinez, N. Fiuza-Maneiro, and L. Polavarapu, ACS Appl. Mater. Interfaces, 14, 34291 (2022). doi: https://doi.org/10.1021/acsami.2c01822
  4. Y. Zhou and Y. Zhao, Energy Environ. Sci., 12, 1495 (2019). doi: https://doi.org/10.1039/C8EE03559H
  5. Y. Zhou, J. Chen, O. M. Bakr, and O. F. Mohammed, ACS Energy Lett., 6, 739 (2021). doi: https://doi.org/10.1021/acsenergylett.0c02430
  6. Y. Wu, J. Feng, Z. Yang, Y. Liu, and S. Liu, Adv. Sci., 10, 2205536 (2023). doi: https://doi.org/10.1002/advs.202205536
  7. H. Dong, C. Ran, W. Gao, M. Li, Y. Xia, and W. Huang, eLight, 3, 3 (2023). doi: https://doi.org/10.1186/s43593-022-00033-z
  8. Y. Mu, Z. He, K. Wang, X. Pi, and S. Zhou, iScience, 25, 105371 (2022). doi: https://doi.org/10.1016/j.isci.2022.105371
  9. C. He and X. Liu, Light: Sci. Appl., 12, 15 (2023). doi: https://doi.org/10.1038/s41377-022-01010-4
  10. S. T. Ha, R. Su, J. Xing, Q. Zhang, and Q. Xiong, Chem. Sci., 8, 2522 (2017). doi: https://doi.org/10.1039/C6SC04474C
  11. D. Duan, C. Ge, M. Z. Rahaman, C. H. Lin, Y. Shi, H. Lin, H. Hu, and T. Wu, NPG Asia Mater., 15, 8 (2023). doi: https://doi.org/10.1038/s41427-023-00465-0
  12. W. Yang, L. Dou, H. Zhu, and Y. Y. Noh, Small Struct., 5, 2300393 (2024). doi: https://doi.org/10.1002/sstr.202300393
  13. H. G. Park, D. Y. Kim, and J. Yi, J. Korean Inst. Electr. Electron. Mater. Eng., 37, 133 (2024). doi: https://doi.org/10.4313/JKEM.2024.37.2.2
  14. C. R. Kagan, D. B. Mitzi, and C. D. Dimitrakopoulos, Science, 286, 945 (1999). doi: https://doi.org/10.1126/science.286.5441.945
  15. D. B. Mitzi, C. D. Dimitrakopoulos, and L. L. Kosbar, Chem. Mater., 13, 3728 (2001). doi: https://doi.org/10.1021/cm010105g
  16. T. Matsushima, F. Bencheikh, T. Komino, M. R. Leyden, A.S.D. Sandanayaka, C. Qin, and C. Adachi, Nature, 527, 502 (2019). doi: https://doi.org/10.1038/s41586-019-1435-5
  17. S. Chu, W. Chen, Z. Fang, X. Xiao, Y. Liu, J. Chen, J. Huang, and Z. Xiao, Nat. Commun., 12, 147 (2021). doi: https://doi.org/10.1038/s41467-020-20433-4
  18. K. Ji, M. Anaya, A. Abfalterer, and S. D. Stranks, Adv. Opt. Mater., 9, 2002128 (2021). doi: https://doi.org/10.1002/adom.202002128
  19. L. Zhang, C. Sun, T. He, Y. Jiang, J. Wei, Y. Huang, and M. Yuan, Light: Sci. Appl., 10, 61 (2021). doi: https://doi.org/10.1038/s41377-021-00501-0
  20. H. Kwon, S. Park, S. Kang, S. Park, Y. J. Pu, and J. Park, Appl. Surf. Sci., 588, 152875 (2022). doi: https://doi.org/10.1016/j.apsusc.2022.152875
  21. H. D. Lee, S. J. Woo, S. Kim, J. Kim, H. Zhou, S. J. Han, K. Y. Jang, D. H. Kim, J. Park, S. Yoo, and T. W. Lee, Nat. Nanotechnol., 19, 624 (2024). doi: https://doi.org/10.1038/s41565-023-01581-2
  22. Y. Mei, C. Zhang, Z. V. Vardeny, and O. D. Jurchescu, MRS Commun., 5, 297 (2015). doi: https://doi.org/10.1557/mrc.2015.21
  23. S. P. Senanayak, B. Yang, T. H. Thomas, N. Giesbrecht, W. Huang, E. Gann, B. Nair, K. Goedel, S. Guha, X. Moya, C. R. McNeill, P. Docampo, A. Sadhanala, R. H. Friend, and H. Sirringhaus, Sci. Adv., 3, e1601935 (2017). doi: https://doi.org/10.1126/sciadv.1601935
  24. A. M. Zeidell, C. Tyznik, L. Jennings, C. Zhang, H. Lee, M. Guthold, Z. V. Vardeny, and O. D. Jurchescu, Adv. Electron. Mater., 4, 1800316 (2018). doi: https://doi.org/10.1002/aelm.201800316
  25. S. P. Senanayak, M. Abdi-Jalebi, V. S. Kamboj, R. Carey, R. Shivanna, T. Tian, G. Schweicher, J. Wang, N. Giesbrecht, D. Di Nuzzo, H. E. Beere, P. Docampo, D. A. Ritchie, D. Fairen-Jumenez, R. H. Friend, and H. Sirrighaus, Sci. Adv., 6, eaaz4948 (2020). doi: https://doi.org/10.1126/sciadv.aaz4948
  26. X. J. She, C. Chen, G. Divitini, B. Zhao, Y. Li, J. Wang, J. F. Orri, L. Cui, W. Xu, J. Peng, S. Wang, A. Sadhanala, and H. Sirringhaus, Nat. Electron., 3, 694 (2020). doi: https://doi.org/10.1038/s41928-020-00486-5
  27. H. Zhu, W. Yang, Y. Reo, G. Zheng, S. Bai, A. Liu, and Y. Y. Noh, Nat. Electron., 6, 650 (2023). doi: https://doi.org/10.1038/s41928-023-01019-6
  28. Q. Chen, N. De Marco, Y. Yang, T. B. Song, C. C. Chen, H. Zhao, Z. Hong, H. Zhou, and Y. Yang, Nano Today, 10, 355 (2015). doi: https://doi.org/10.1016/j.nantod.2015.04.009
  29. J. S. Manser, J. A. Christians, and P. V. Kamat, Chem. Rev., 116, 12956 (2016). doi: https://doi.org/10.1021/acs.chemrev.6b00136
  30. L. Chu, W. Ahmad, W. Liu, J. Yang, R. Zhang, Y. Sun, J. Yang, and X. Li, Nano-Micro Lett., 11, 16 (2019). doi: https://doi.org/10.1007/s40820-019-0244-6
  31. C. C. Boyd, R. Cheacharoen, T. Leijtens, and M. D. McGehee, Chem. Rev., 119, 3418 (2019). doi: https://doi.org/10.1021/acs.chemrev.8b00336
  32. Y. Li, W. Zhou, Y. Li, W. Huang, Z. Zhang, G. Chen, H. Wang, G. H. Wu, N. Rolston, R. Vila, W. Chiu, and Y. Cui, Joule, 3, 2854 (2019). doi: https://doi.org/10.1016/j.joule.2019.08.016
  33. T. A. Chowdhury, M.A.B. Zafar, M.S.U. Islam, M. Shahinuzzaman, M. A. Islam, and M. U. Khandaker, RSC Adv., 13, 1787 (2023). doi: https://doi.org/10.1039/D2RA05903G
  34. F. Corsini and G. Griffini, J. Phys. Energy, 2, 031002 (2020). doi: https://doi.org/10.1088/2515-7655/ab8774
  35. G. Y. Kim, K. Kim, H. J. Kim, H. S. Jung, I. Jeon, and J. W. Lee, EcoMat, 5, e12319 (2023). doi: https://doi.org/10.1002/eom2.12319
  36. A.S.R. Bati, Y. L. Zhong, P. L. Burn, M. K. Nazeeruddin, P. E. Shaw, and M. Batmunkh, Commun. Mater., 4, 2 (2023). doi: https://doi.org/10.1038/s43246-022-00325-4
  37. M. Ding, X. Cai, and H. L. Jiang, Chem. Sci., 10, 10209 (2019). doi: https://doi.org/10.1039/C9SC03916C
  38. W. Shen, Y. Dong, F. Huang, Y. B. Cheng, and J. Zhong, Mater. Rep.: Energy, 1, 100060 (2019). doi: https://doi.org/10.1016/j.matre.2021.100060
  39. Z. Z. Li, C. Guo, W. Lv, P. Huang, and Y. Zhang, J. Phys. Chem. Lett., 15, 3835 (2024). doi: https://doi.org/10.1021/acs.jpclett.4c00320
  40. L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, Nano Lett., 15, 3692 (2015). doi: https://doi.org/10.1021/nl5048779
  41. S. Mourdikoudis, R. M. Pallares, and N.T.K. Thanh, Nanoscale, 10, 12871 (2018). doi: https://doi.org/10.1039/C8NR02278J
  42. M. Jost, L. Kegelmann, L. Korte, and S. Albrecht, Adv. Energy Mater., 10, 1904102 (2020). doi: https://doi.org/10.1002/aenm.201904102
  43. Y. T. Huang, S. R. Kavanagh, D. O. Scanlon, A. Walsh, and R.L.Z. Hoye, Nanotechnology, 32, 132004 (2021). doi: https://doi.org/10.1088/1361-6528/abcf6d
  44. M. H. Mohammadi, M. Eskandari, and D. Fathi, Sci. Rep., 13, 15905 (2023). doi: https://doi.org/10.1038/s41598-023-43137-3