• 제목/요약/키워드: Electronic Device

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Fe-Si 전기강판 폐스크랩을 이용한 연자성 분말 및 테이프 제조기술 (Manufacturing Technology for Tape Casting and Soft Magnetic Powder Using by Recycling Scrap of Fe-Si Electrical Sheet)

  • 홍원식;김상현;박지연;오철민;이우성;김승겸;한상조;심금택;김휘준
    • 마이크로전자및패키징학회지
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    • 제23권2호
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    • pp.11-18
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    • 2016
  • This study focused on examining the possibility for recycling of Fe-Si electric sheet. We manufactured Fe-6.5Si mother alloy using by Fe-Si electric sheet scrap for transformer core materials. And then, soft magnetic alloy powder which diameter and shape were $45{\sim}150{\mu}m$ and sphere type was prepared by gas atomization process. As we compared to commercial Fe-6.5Si powder, its diameter distribution and microstructure of recycled powder was a similar. To investigate the possibility of reusing the soft magnetic composite sheet for electronics, recycled powder was treated to have a high aspect ratio (AR), and we finally obtained the 65~66 AR and $2.3{\mu}m$ thickness powder. To release the residual stress of powder, heat treatment was conducted under $300{\sim}400^{\circ}C$, $N_2$ gas. And then, soft magnetic sheet was made by tape casting process using by those powders. After the density and permeability of tape was measured, and we confirmed that the recycled Fe-Si electric sheet scrap was possible to reuse the soft magnetic materials of electronics.

그래핀/구리폼과 그래파이트 하이브리드 구조체의 열전도 특성 연구 (The study of thermal properties of graphene/Cu foam hybrid structures)

  • 김희진;김형근;김예나;이우성;윤대호;양우석
    • 한국결정성장학회지
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    • 제23권5호
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    • pp.235-240
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    • 2013
  • 그래핀(Graphene)은 전기 전도성 및 열전도성이 우수하고 1 nm 수준의 초 박막 형 필름 소재를 제조할 수 있다는 장점으로 인하여, 차세대 트랜지스터 소자 및 디스플레이 장치에 적용 가능한 방열 소재로서 많은 연구가 활발히 진행되고 있다. 또한 CVD(chemical vapor deposition)제조법으로 합성된 그래파이트(Graphite)는 구조의 단순성 및 유연성 때문에 안정하고 열에 강한 탄소계 방열소재로 주목 받고 있다. 본 연구는 열전도도가 우수한 폼(foam)형태의 구리를 촉매로 상압과 진공에서의 CVD법을 이용하여 그래핀을 성장시킨 후 구리 폼의 기공 안에 다양한 종류의 그래파이트(Natural graphite, expandable(/expanded) graphite, etc)를 복합 및 안정화시켜 기존보다 높은 열전도도를 가지는 방열소재를 개발하였다. 제조된 금속폼/그래파이트 소재를 OM(optical microscopy)과 SEM(scanning electron microscopy)을 이용하여 표면을 확인하였고 DSC(Differential Scanning Calorimetry), 아르키메데스 법을 활용한 비열, 밀도 결과를 확보하였다. 또한 LFA(Laser Flash Analysis)를 이용하여 열 확산계수 예측을 통한 열전도 특성을 평가하였다.

Fe-Si 전기강판 폐스크랩을 이용한 3원계 Fe-9.8Si-6.0Al 합금의 연자성 특성 (Soft Magnetic Property of Ternary Fe-9.8Si-6.0Al Alloy Using by Recycling Fe-Si Electrical Steel Sheet Scrap)

  • 홍원식;양형우;박지연;오철민;이우성;김승겸;한상조;심금택;김휘준
    • 마이크로전자및패키징학회지
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    • 제24권1호
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    • pp.1-8
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    • 2017
  • Fe-9.8Si-6.0Al mother alloy was manufactured using by Fe-3.5Si recycled scrap and Si powder. And then, soft magnetic alloy powder of $D_{50}$ size and sphere type were prepared by gas atomization process. To obtain the soft magnetic powder of a high aspect ratio, in the first, we conducted the ball milling process for 8 hours. And heat treatment was performed under $650^{\circ}C$, 2 hours and $N_2$ atmosphere condition for reducing the residual stress of the powder. Based on these process, we made around $50{\mu}m$ diameter Fe-9.8Si-6.0Al powder, which morphology and shape was a similar to the commercial Fe-Si-Al powder. Finally, the soft magnetic sheets were prepared by tape casting process using by those powders. The permeability of the tape casting sheet was measured, and we confirmed the possibility of reusing to the soft magnetic materials of Fe-Si electric sheet scrap.

스마트윈도우 응용을 위한 FTO 기판 위에 증착된 VO2 박막의 광학적 특성 (Optical Properties of VO2 Thin Film Deposited on F:SnO2 Substrate for Smart Window Application)

  • 강소희;한승호;박승준;김형근;양우석
    • 한국재료학회지
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    • 제23권4호
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    • pp.215-218
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    • 2013
  • Vanadium dioxide ($VO_2$) is an attractive material for smart window applications where the transmittance of light can be automatically modulated from a transparent state to an opaque state at the critical temperature of ${\sim}68^{\circ}C$. Meanwhile, F : $SnO_2$ (F-doped $SnO_2$, FTO) glass is a transparent conductive oxide material that is widely used in solar-energy-related applications because of its excellent optical and electrical properties. Relatively high transmittance and low emissivity have been obtained for FTO-coated glasses. Tunable transmittance corresponding to ambient temperature and low emissivity can be expected from $VO_2$ films deposited onto FTO glasses. In this study, FTO glasses were applied for the deposition of $VO_2$ thin films by pulsed DC magnetron sputtering. $VO_2$ thin films were also deposited on a Pyrex substrate for comparison. To decrease the phase transition temperature of $VO_2$, tungsten-doped $VO_2$ films were also deposited onto FTO glasses. The visible transmittance of $VO_2$/FTO was higher than that of $VO_2$/pyrex due to the increased crystallinity of the $VO_2$ thin film deposited on FTO and decreased interface reflection. Although the solar transmittance modulation of $VO_2$/FTO was lower than that of $VO_2$/pyrex, room temperature solar transmittance of $VO_2$/FTO was lower than that of $VO_2$/pyrex, which is advantageous for reflecting solar heat energy in summer.

Analytical Modeling and Simulation for Dual Metal Gate Stack Architecture (DMGSA) Cylindrical/Surrounded Gate MOSFET

  • Ghosh, Pujarini;Haldar, Subhasis;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권4호
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    • pp.458-466
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    • 2012
  • A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.

재난 무선통신을 위한 D2D 단말탐색 기반 주파수 자원 확보 기술 (Frequency Resource Obtaining Method Based on D2D Device Discovery in Public Safety Communication Networks)

  • 오선애;신오순;신요안
    • 한국통신학회논문지
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    • 제41권11호
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    • pp.1440-1442
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    • 2016
  • LTE (Long Term Evolution) 네트워크를 기반으로 하는 공공안전 및 재난통신 관련 연구가 활발히 진행되고 있으며, 기지국의 도움 없이 직접통신이 가능한 D2D (Device-to-Device) 통신 기술은 차세대 공공안전 및 재난통신망의 기반 기술로 각광받고 있다. 본 논문에서는 재난 지역의 기지국이 붕괴되었거나 통신 폭주로 인해 자원 할당이 지연되는 경우에 D2D 단말 탐색을 활용하여 재난 지역 단말들의 통신을 위한 신속하고도 정확한 주파수 자원 확보 기술을 제안한다.

Failure Prediction of Metal Oxide Varistor Using Nonlinear Surge Look-up Table Based on Experimental Data

  • Kim, Young Sun
    • Transactions on Electrical and Electronic Materials
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    • 제16권6호
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    • pp.317-322
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    • 2015
  • The metal oxide varistor (MOV) is a major component of the surge protection devices (SPDs) currently in use. The device is judged to be faulty when fatigue caused by the continuous inflow of lightning accumulates and reaches the damage limit. In many cases, induced lightning resulting from lightning strikes flows in to the device several times per second in succession. Therefore, the frequency or the rate at which the SPD is actually exposed to stress, called a surge, is outside the range of human perception. For this reason, the protective device should be replaced if it actually approaches the end of its life even though it is not faulty at present, currently no basis exists for making the judgment of remaining lifetime. Up to now, the life of an MOV has been predicted solely based on the number of inflow surges, irrespective of the magnitude of the surge current or the amount of energy that has flowed through the device. In this study, nonlinear data that shows the damage to an MOV depending on the count of surge and the amount of input current were collected through a high-voltage test. Then, a failure prediction algorithm was proposed by preparing a look-up table using the results of the test. The proposed method was experimentally verified using an impulse surge generator

유기 발광 소자의 광추출 효율 향상을 위한 마이크로 렌즈 어레이의 시뮬레이션 (Simulation of Microlens Array for the Improvement of Outcoupled Efficiency of Organic Light-emitting Diodes)

  • 황덕현;김혜숙;이원재;이승훈;김태완
    • 한국전기전자재료학회논문지
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    • 제26권10호
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    • pp.745-753
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    • 2013
  • Performance of organic light-emitting diodes incorporating microlens array was simulated using a Light Tools software. Use of microlens array can help the light to escape out of the device. We simulated a reference device that is consisted of reflection layer, emissive layer, and flat transparent substrate. And in this reference device, outcoupled efficiency of 22% was obtained. Several shapes of microlens were applied such as hemisphere, trapezoid, cone, and rectangular parallelepiped. The results showed the improvement of outcoupled efficiency of the device with microlens compared to that of the reference one. And from the analyses of the simulated data, the obtained appropriate shape of microlens is hemisphere, and the improvement of the device with hemispherical lens is 57% higher than that of the reference one.

규소강판 코어소재의 가공 방법에 따른 철손 특성 (Korean Institute of Electrical and Electronic Materials)

  • 김인성;정순종;민복기;김형욱;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.343-344
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    • 2006
  • 방향성 규소강판을 tape-wound core 형태로 제작하여 가공방법에 따른 자기적 특성을 조사 하였다. 그 결과 곡률반경이 40mm인 시료에서 보자력(Hc)과 포화자속밀도(Bs)는 우수한 값을 나타내었고, 보자력은 0.02Oe, 포화자속밀도는 1.85T 이었다. 현재 국내에서 생산되고 있는 방향성 규소강판의 자속밀도값 보다 우수한 값을 나타내었다. 본 연구로부터 방향성 규소강판을 이용하여 권자심을 제작할 때 도입되는 탄성변형에 대한 대책의 중요성과 코어 소재의 가공방법이 자기적 특성에 미치는 영향을 통해 고효율 방향성 규소강판 개발의 가능성을 확인하였다.

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Poly-crystalline Silicon Thin Film Transistor: a Two-dimensional Threshold Voltage Analysis using Green's Function Approach

  • Sehgal, Amit;Mangla, Tina;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권4호
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    • pp.287-298
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    • 2007
  • A two-dimensional treatment of the potential distribution under the depletion approximation is presented for poly-crystalline silicon thin film transistors. Green's function approach is adopted to solve the two-dimensional Poisson's equation. The solution for the potential distribution is derived using Neumann's boundary condition at the silicon-silicon di-oxide interface. The developed model gives insight into device behavior due to the effects of traps and grain-boundaries. Also short-channel effects and drain induced barrier lowering effects are incorporated in the model. The potential distribution and electric field variation with various device parameters is shown. An analysis of threshold voltage is also presented. The results obtained show good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of our model.