• Journal of the Korean Institute of Intelligent Systems
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• v.14 no.7
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• pp.927-933
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• 2004

This paper proposes an alternative observation scheme, T-S fuzzy model based indirect adaptive fuzzy observer. Nonlinear systems are represented by fuzzy models since fuzzy logic systems are universal approximators. In order to estimate the unmeasurable states of a given nonlinear system, T-S fuzzy modeling method is applied to get the dynamics of an observation system. T-S fuzzy system uses the linear combination of the input state variables and the modeling applications of them to various kinds of nonlinear systems can be found. The adaptive fuzzy scheme estimates the parameters comprising the fuzzy model representing the observation system. The proposed indirect adaptive fuzzy observer based on T-S fuzzy model can cope with not only unknown states but also unknown parameters. In the process of deriving adaptive law, the Lyapunov theory and Lipchitz condition are used. To show the performance of the proposed observation method, it is applied to an inverted pendulum on a cart.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.102-102
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• 2009

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.12-12
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• 2008

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.551-557
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• 1996

To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.810-812
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• 1998

We studied on the $\pi$-A isotherm of the L-$\alpha$-DLPC was measured at the air-water interface varying with the compressing speed and amounts of solutions for spreading. The molecular arrangement of deposited films were evaluated by measuring the absorption with the UVspectrometer. We made structures of metal(Au)/organic thin films (L-$\alpha$-DLPC)/Metal(Au), the number of accumulated layers are 3. And I-V characteristic of the device examined.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.4
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• pp.685-694
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• 2018

In this paper, we designed and fabricated the frequency mixer, which is the core parts of high frequency head in Ku-band tracking radar. To overcome the problem of single-ended and single-balanced resistive structure, we designed the fine-line structure with balanced mixer, to generate IF signal without distortion in L-band, after receiving the RF signal of the Ku-band. The prototype mixer showed a Noise Figure Max of 6.823dB, Gain of 4.1598~4.676dB and Band Pass of 61MHz in 5 Ku-band samples frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.743-749
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• 2002

A 1.5V 70㏈ 100MHz CMOS class-AB complementary operational amplifier is presented. For obtaining the high gain and the high unity gain frequency, the input stage of the amplifier is designed with rail-to-rail complementary differential pairs which are symmetrically parallel-connected with the NMOS and the PMOS differential input pairs, and the output stage is designed to the rail-to-rail class-AB output stage including the elementary shunt stage technique. With this design technique for output stage, the load dependence of the overall open loop gain is improved and the push-pull class-AB current control can be implemented in a simple way. The designed operational amplifier operates perfectly on the complementary mode with 180$^{\circ}$ phase conversion for 1.5V supply voltage, and shows the push-pull class-AB operation. In addition, the amplifier shows the DC open loop gain of 70.4 ㏈ and the unity gain frequency of 102 MHz for $C_{L=10㎊∥}$ $R_{L=1㏁}$ Parallel loads. When the resistive load $R_{L}$ is varied from 1 ㏁ to 1 ㏀, the DC open loop gain of the amplifier decreases by only 2.2 ㏈.a$, the DC open loop gain of the amplifier decreases by only 2.2 dB.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1545-1547
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-Sic-$TiB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_{5}Y_{3}O_{12}$). The relative density and the mechanical properties of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_3$ contents because YAG of reaction between $Al_{2}O_3$ and $Y_{2}O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism. the fracture toughness showed 7.1MPa${\cdot}m^{1/2}$. For composites added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature The electrical resistivity and the resistance temperature coefficient respectively showed the lowest of 6.0${\sim}10^{-4}{\Omega}{\cdot}$ cm and 3.1${\times}10^{-3}/^{\circ}C$ for composite added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of 25$^{\circ}C$ to 700$^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.4
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• pp.599-604
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• 2021

In the information age, internet was developed from the wired access to the wireless Internet access. When a surge in demand for wireless Internet access, efficiency and performance of 2.4 and 5GHz band which leads to saturation of the communication was significantly fall. In this paper, we studied the design and fabrication of slot patch antenna to be used in wireless communication systems operating at around 10GHz band. To obtain optimal antenna parameters such as patch size, inter patch space, sL, sW, feed L, feed w, slot patch antenna was simulated by HFSS(High Frequency Structure Simulator). From these parameters, slot and patch antenna is fabricated using FR-4 substrate of dielectric constant 4.4. The characteristics of fabricated antenna were analyzed by network analyzer. The fabricated slot patch antenna showed a center frequency as 10.23GHz, the minimum return loss as -32dB, and -10dB bandwidth as 420MHz respectively.