• Journal of Korean Society for Atmospheric Environment
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• v.17 no.2
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• pp.223-231
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• 2001

In order to provide some insights into the influence of electric field, gas composition, and gas temperature on electron energy distribution and electron transport characteristics, the Boltzmann equation was solved by using cross section data for electron collisions, Critical electric fields for the corona development in dry air and flue gas are 150 and 80 Td, respectively. It was seen that the decrease of critical electric field in flue gas is mainly caused by the $H_2O$ addition through the comparison of ionization and attachment coefficients of gas components. Increase of $O_2$, $H_2O$, and $CO_2$ contents in gas affected discharge characteristics according to their reciprocal characteristics between lowering the ionization threshold and increasing the electro-negativity. As electric field increases, electrons with higher energies in the electron energy distribution also increase. The mean and characteristic electron energies also linearly increase with electric field. The variation of flue gas temperature did rarely affect on the electron energy distribution function and electron transport characteristics, because the gas temperature is several hundreds or thousands times lower than the electron temperature.

• 전기의세계
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• v.27 no.3
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• pp.36-42
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• 1978

It has been investigates that electric characteristics of plasma electron beam in N$_{2}$, H$_{2}$ and Ar gas jars under various gas pressures during electron beams are formed. The results are as follows: 1)Electron beam is formed in the region of positive resistance on the characteristic curve. This phenomenon is identical in N$_{2}$, H$_{2}$ and Ar gases. 2)But in Ar gas, electron beam is formed at relatively lower gas pressure than in H$_{2}$ and N$_{2}$. 3)In pure gas either N$_{2}$, H$_{2}$ and N$_{2}$ the lower the gas pressure, the higher the voltage drop for the same electron beam current. 4)The region in which electron beam is formed is limited at a given pressure. 5)Beyond the limit mentioned above, it becomes glow discharge state and the current increases radically. 6)At a given gas pressure, electron beam voltage, that is, electrical power input increases with gap length.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.3
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.636-639
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• 2010

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1582-1583
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• 2011

Recently, it has been found that trifluoroiodomethane ( $CF_3I$) gas can replace $SF_6$ gas as a prospective substitute gas. For quantitative understanding of gas discharge phenomena, we should know electron collision cross sections and electron transport coefficients. Using electron collision cross sections of $CF_3I$ and Xe, we calculated elecron drift velocity, longitudinal coefficient, effective ionization coefficient in $CF_3I$-Xe mixtures using a two-term approximation of the Boltzmann equation. We also compared the electron transport coefficients in pure gas and those of 10%, 20%, 50%, and 70% $CF_3I$-Xe mixture gases. The present data may be showed appropriate ratios of $CF_3I$-Xe mixture gas for replacing the $SF_6$ gas.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.462-472
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• 1994

In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.1
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• pp.19-23
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• 2014

This paper describes the electron transport characteristics in $SF_6$-He gas calculated E/N values 0.1~700[Td] by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters obtained by TOF method. This study gained the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients for $SF_6$-He gas at a range of E/N. A set of electron collision cross section has been assembled and used in Monte Carlo simulation to predict values of swarm parameters. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.167-172
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• 1997

The electron swarm parameters and Energy distribution function have been calculated for electrons motion through CH$_4$ pure gas under the action of uniform electric field for 0.1$\leq$E/N(Td)$\leq$300, at the 300( $^{\circ}$K), using MCS method and Boltzmann transport equation. And then the resulting values of electron drift velocity were compared to experimental data and adjustment made in assumed cross sections until good agreement was obtained. The electron drift velocity is very useful in the fields of study relating to the conductive and dielectric phenomena of gas medium. The electron energy distribution in gas discharge are generally nonmaxwellian , and must be calculated by a numerical solution of the Boltzmann equation which takes in the elastic and inelastic collisions. To analyze the physical phenomena and properties (or electron swarm motion in a gas under the influence of an electric field, the energy distribution function of electrons and the theoretical deriveration of the electron drift velocity are calculated by the Backward Prolongation with respect to the Boltzmann transport equation as a parameter of E/N(Td).

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.