• Title/Summary/Keyword: Electron diffusion

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Nucleation and Growth of Bismuth Electrodeposition from Alkaline Electrolyte

  • Zhou, Longping;Dai, Yatang;Zhang, Huan;Jia, Yurong;Zhang, Jie;Li, Changxiong
    • Bulletin of the Korean Chemical Society
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    • v.33 no.5
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    • pp.1541-1546
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    • 2012
  • The early stages of bismuth (Bi) electrodeposition on glass carbon electrode from alkaline electrolyte were studied by cyclic voltammetry, chronoamperometry, scanning electron microscopy, atomic force microscopy and X-ray diffraction. The CV analysis showed that the electrodeposition of Bi was determined to be quasireversible process with diffusion controlled. The current transients for Bi electrodeposition were analyzed according to the Scharifker-Hills model and the Heerman-Tarallo model. It can be concluded that the nucleation and growth mechanism was carried out under a 3D instantaneous nucleation, which was confirmed by SEM analysis. The kinetic growth parameters were obtained through a nonlinear fitting. In addition, the Bi film obtaining at -0.86 V for 1 hour was of compact and uniform surface with good smoothness, small roughness and a very high purity. The Bi film were indexed to rhombohedral crystal structure with preferred orientation of (0 1 2) planes to growth.

Oxidation Process of GaN Schottky Diode for High-Voltage Applications (고전압 응용분야를 위한 GaN 쇼트키 다이오드의 산화 공정)

  • Ha, Min-Woo;Han, Min-Koo;Hahn, Cheol-Koo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2265-2269
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    • 2011
  • 1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

Growth Mechanism and Crystal Ordering of Spherulitic Patterns in a Belousov-Zhabotinsky Type Reaction System

  • Yadav, Narendra;Majhi, S.S.;Srivastava, P.K.
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3397-3406
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    • 2012
  • Three types of spherulitic morphologies have been investigated in dual substrate mode of Belousov-Zhabotinsky (BZ) type reaction system. Prior to growth of spherulites, three distinct patterning behaviors have been observed sequentially during the reaction process. Initial and the early-phase of reaction showed the emergence of concentric ring-like wave patterns. A colloidal-state of reaction consists of numerous fine solid particles, which forms primarily some nucleation centers of dendritic characters. The nucleation centers were found to grow in sizes and shapes with the progress of reaction. It leads to growth of dendritic-like spherulitic crystal patterns. The resultant spherulites showed transitions in their morphologies, including sea-weeds and rhythmic spherulitic crystal patterns, by the effects substituted organic substrate and in the higher concentration of bromate-initiator respectively. The branching mechanism and crystal ordering of spherulitic textures were studied with help of optical microscope (OPM) and scanning electron microscope (SEM). Characteristics of crystal phases were also evaluated using X-ray diffraction (XRD) and differential thermal analysis (DTA). Results indicated that the compositions of reactants and crystal orderings were interrelated with morphological transitions of spherulites as illustrated and described.

Effect of Titanium Nanorods in the Photoelectrode on the Efficiency of Dye Sensitized Solar Cells

  • Rahman, Md. Mahbubur;Kim, Hyun-Yong;Jeon, Young-Deok;Jung, In-Soo;Noh, Kwang-Mo;Lee, Jae-Joon
    • Bulletin of the Korean Chemical Society
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    • v.34 no.9
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    • pp.2765-2768
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    • 2013
  • The effect of $TiO_2$ nanorods (TNR) and nanoparticles (TNP) composite photoelectrodes and the role of TNR to enhance the energy conversion efficiency in dye-sensitized solar cells (DSSCs) was investigated. The 5% TNR content into the TNP photoelectrode significantly increased the short-circuit current density ($J_{sc}$) and the open-circuit potential ($V_{oc}$) with the overall energy conversion efficiency enhancement of 13.6% compared to the pure TNP photoelectrode. From the photochemical and impedemetric analysis, the increased $J_{sc}$ and $V_{oc}$ for the 5% TNR/TNP composite photoelectrode was attributed to the scattering effect of TNR, reduced electron diffusion path and the suppression of charge recombination between the composite photoelectrode and electrolyte or dye.

Polarographic Behavior of Azo Series Organic Compounds (Ⅰ). Reduction of 4-(2-Pyridylazo)resorcinol in Acetonitrile (Azo계 유기화합물의 폴라로그래프법적 거동 (제1보). 아세토니트릴 중에서 4-(2-Pyridylazo) resorcinol의 환원)

  • Heung Lark Lee;Zun Ung Bae
    • Journal of the Korean Chemical Society
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    • v.26 no.6
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    • pp.389-395
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    • 1982
  • The polarographic behavior of 4-(2-pyridylazo)-resorcinol(PAR) in acetonitrile solution was studied. In order to investigate the type of reduction current at every reduction step, dependence of limiting current on the height of mercury head, solution temperature, and concentration of PAR have been examined. The results were shown that the reduction current was controlled by diffusion. And the effect of proton donor such as water and phenol on DC polarograms of PAR and the reversibility of every reduction wave have been evaluated. Based on the experimental results, the polarographic reduction of PAR in acetonitrile solution occurred in two one-electron steps.

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Molecular Beam Epitaxial Growth of GaAs on Silicon Substrate (실리콘 기판위에 분자선속법으로 생장한 GaAs 에피층)

  • 이동선;우덕하;김대욱;우종천
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.1
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    • pp.82-91
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    • 1991
  • Molecular beam epitaxial growth of GaAs on Si substrate and the results on its analysis are reported. Epitaxy was performed on two different types of the substrate under various grwth conditions, and was analyzed by scanning and transmission electron microscopes, X-ray diffractometer, photoluminescence and Hall measurements. GaAs epitaxial layer has better crystalline quality when it was grown on a tilt-cut substrate. The stress seems to be releaxed more easily when multi-quantum well was introduced in the buffer layer. The epilayer was doped unintentionally with Si during growth due to the diffusion of the substrate. Also observed is that the quantum efficiency of excitonic radiative recombination of the heteroepitaxy is not as good as that of the homoepitaxy in the same doping level.

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Ni-assisted growth of transparent and single crystalline indium-tin-oxide nanowires

  • Kim, Hyeon-Gi;Kim, Jun-Dong;Park, Hyeong-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.259-259
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    • 2015
  • Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

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The Microsponge Delivery System of Itraconazole: Preparation, Characterization and Release Studies (이트라코나졸 마이크로스폰지의 약물 전달 시스템: 제조, 특성 및 방출 연구)

  • Cho, Young-Ho;Lee, Jong-Hwa;Kim, Hak-Hyung;Lee, Gye-Won
    • KSBB Journal
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    • v.26 no.3
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    • pp.217-222
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    • 2011
  • Itraconazole is a triazole antifungal agent to inhibit most fungal pathogens. To improve the oral absorption and dissolution of poorly water-soluble itraconazole, microsponge system composed of $Eudragit^{(R)}$ E100 and polyvinyl alcohol(PVA) formulated by quasi-emulsion solvent diffusion method, and its physicochemical properties and pharmacokinetic parameters of itraconazole were studied. The microsponge of itraconazole were discrete free flowing micro sized particles with perforated orange peel like morphology as visualized by scanning electron microscope (SEM). Results showed that the drug loading efficiency, production yield, and particle size of itraconazole microsponge were affected by drug to polymer ratio, the volume of internal phase containing methylene chloride, stirring rate and the concentration of PVA used. Also, the results showed that the dissolution rate of itraconazole from the microsponges was affected by drug to polymer ratio. In other words, the release rate of itraconazole from microsponges was increased from at least 27.43% to 64.72% after 2 h. The kinetics of dissolution mechanism showed that the dissolution data followed Korsmeyer-Peppas model. Therefore, these results suggest that microsponge system can be useful for the oral delivery of itraconazole by manipulating the release profile.

Petunia Asteroid Mosaic Virus Isolated from Petunia hybrida Vilm. (폐츄니아에서 분리한 Petunia Asteroid Mosaic Virus)

  • 노궤미;최충원;최장경
    • Korean Journal Plant Pathology
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    • v.11 no.4
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    • pp.361-366
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    • 1995
  • A virus was isolated from petunia (Petunia hybrida Vilm.) plants showing chlorotic ring spots on the leaves and color breaking on the flowers, and was identified as petunia asteroid mosaic virus (PAMV). Identification of the PAMV was established by host range test, electron microscopy, serological reaction, and physical properties of the virus. In the host range test, Nicotiana glutinosa, N. rustica, N. clevelandii, P. hybrida, Gomphrena globosa, and Chenopodium amaranticolor were systemically infected with the virus. The virus produced local lesions on inoculated leaves of N. tabacum‘Samsun’, N. tabacum‘Xanthi nc’, Datura stramonium, Vigna unguiculata‘White eye’, C. quinoa, Capsicum annuum, Vicia faba, and Lycopersicon esculentum‘Rutgers’. However, Cucurbita sativus and C. moschata did not show any symptoms. PAMV particles were isometric with 30 nm in diameter. The crude sap from G. globosa infected with the virus reacted positively with antiserum to tomato bushy stunt virus (TBSV) in agar gel double diffusion test. Thermal inactivation point of the virus was 8$0^{\circ}C$ and the virus retained its infectivity at the dilution of 10-4. Longevity in vitro of the virus was estimated longer than 35 days.

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A Study on The Photoelectric Characteristics of Dye-sensitized Solar Cell according to Expanding Photo-electrode (염료감응형 태양전지의 광전극 확장에 따른 광전특성 연구)

  • Seo, Hyun-Woong;Kim, Mi-Jeong;Park, Je-Wook;Kim, Ho-Sung;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.305-308
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    • 2007
  • The field of dye-sensitized solar cell (DSC) is being researched actively at present. Because DSC has several advantages to pass the limits of Si solar cells such as a low manufacturing expense, a simple manufacturing process and its transparency. A lot of researches are underway about materials and processes in the field of dye-sensitized solar cell but its structure has been fixed up as the sandwich structure that both edges are used as positive and negative terminals. But the structure as of present is a factor of decreasing efficiency because the more electrons are recombined the further distance from terminal, considering about the characteristic of dye-sensitized solar cell that electrons generated inside cell are moved by diffusion. In this study, we made experiment on expanding the terminal to shorten internal moving distance of electron and compared the results according to the variation of active area to find out the effect of this trial. As a result, we achieved about 15.5% improvement of maximum power and 0.5% improvement of efficiency from terminal-expanded dye-sensitized solar cell of $2cm^{2}$ active area and concluded that the increasing rate of efficiency is raised as the active area becomes wider.

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