• Nuclear Engineering and Technology
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• 제51권3호
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• 한국정밀공학회지
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• 제25권4호
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• pp.53-60
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• 2008

Electron detectors used in scanning electron microscope accept electrons emitted from the specimen and convert them to an electrical signal that, after amplification, is used to modulate the gray-level intensities on a cathode ray tube, producing an image of the specimen. Electron detector is one of the key components dominating the performance of scanning electron microscope so that the development of electron detectors having high performance is indispensable to acquire high quality images using scanning electron microscope. In this paper, we designed and manufactured an electron detector and conducted a couple of image capture experiments using it. In particular, scintillator which generates light photons when it is struck by high-energy electrons was manufactured and experimental studies on the optimization of manufacturing condition was carried out. From experiments to evaluate the performance of our detector, it was verified that the performance of our detector is equivalent to or better than that of the conventional one.

• 천문학회보
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• 제36권2호
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• pp.94.2-94.2
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• 2011

Electron microbursts, energetic electron precipitation having duration less than 1 sec, have been thought to be generated by chorus wave and electron interactions. While the coincidence of chorus and microburst occurrence supports the wave-particle interaction theory, more crucial evidences have not been observed to explain the origin of microbursts. We propose the measurement of energy dispersion of microbursts could be an evidence supporting wave-particle theory. During chorus waves propagate along magnetic field, the resonance condition should be satisfied at different magnetic latitude for different energy electrons. If we observed electron microbursts at low altitude, the arrival time of different energy electrons should make unique dispersion structures. In order to observe such energy dispersion, we need a detector having fast time resolution and wide energy range. Our study is motivated from defining the time resolution and energy range of the detectors required to measure microburst energy dispersions. We performed test particles simulation to investigate how electrons interact with simple coherent waves like chorus waves. We compute a large number of electron's trajectories and successfully produce energy dispersion structures expected when microbursts are observed with 10 msec time resolution detectors at the altitude of 600 km. These results provide useful information in designing electron detectors for the future mission.

• Progress in Superconductivity
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• 제14권2호
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• pp.92-95
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• 2012

Superconducting detectors are promising as ion detectors for time-of-flight mass spectrometers (TOF MS). They can achieve mass-independent detection efficiency even for macromolecular bombardments, because output signals are produced through the deposited kinetic energy at ion impact instead of secondary electron emission that is the ion detection mechanism of conventional microchannel plate (MCP) detectors or secondary electron multipliers (SEM). Among the superconducting detectors, the superconducting strip ion detectors (SSIDs), which consist of several hundreds of superconducting lines with a width of a few hundreds nm and a thickness of a few tens of nm, have a fast response time of less than 1 ns. Inherently, the response time of SSIDs is determined by kinetic inductance, so that it was difficult to realize a fast SSID with a large detection area. However, we succeeded in realizing the detector size up to $5{\times}5mm^2$ without response time degradation by using a parallel configuration.

• Applied Microscopy
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• 제46권1호
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• pp.1-5
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• 2016

Recent cryo-electron microscopy (EM) studies reported the structure of various types of proteins at high resolution which is sufficient to visualize the intermolecular interaction at near atomic level. There are two main factors that cause the advances in cryo-EM; the development of image processing techniques, such as single particle analysis, and the improved electron detection devices. Although the atomic structures of small and asymmetric proteins are not yet to be determined by cryo-EM, this striking improvement implies the bright prospect of the application in biomedical studies. This study reviews the recently published studies reported high resolution structures using improved imaging analysis techniques and electron detectors. Furthermore, we will discuss about the future aspects of cryo-EM application.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.285-288
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• 2002

In this study, we investigate electron transport properties in xenon gas by using a Monte Carlo technique for electrons with energies below 10 keV. First of all, we determine a set of electron collision cross sections with xenon by scrutinizing the cross section data taken from many publications. Then, the W value and the Fano factor for electrons in gaseous xenon are computed by the Monte Carlo simulation on the assumption that electrons undergo single collision events including elastic, excitation and ionization processes. We also evaluate the production number of excited atoms.

• 천문학회지
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• 제51권4호
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• pp.111-117
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• 2018

A numerical method is proposed to calculate the response of detectors measuring particle energies from incident isotropic fluxes of electrons and positive ions. The isotropic flux is generated by injecting particles moving radially inward on a hypothetical, spherical surface encompassing the detectors. A geometric projection of the field-of-view from the detectors onto the spherical surface allows for the identification of initial positions and momenta corresponding to the clear field-of-view of the detectors. The contamination of detector responses by particles penetrating through, or scattering off, the structure is also similarly identified by tracing the initial positions and momenta of the detected particles. The relative contribution from the contaminating particles is calculated using GEANT4 to obtain the geometric factor of the instrument as a function of the energy. This calculation clearly shows that the geometric factor is a strong function of incident particle energies. The current investigation provides a simple and decisive method to analyze the instrument geometric factor, which is a complicated function of contributions from the anticipated field-of-view particles, together with penetrating or scattered particles.

• 한국군사과학기술학회지
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• 제1권1호
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Nuclear Engineering and Technology
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• 제29권6호
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• 한국콘텐츠학회논문지
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• 제10권6호
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• pp.329-335
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• 2010

디지털 방사선시스템에서의 의료영상 획득의 방법은 X선을 조사하고, 반도체 디텍터(Detector)를 이용하여 직접 및 간접으로 변환하여 기존 업체마다 여러 가지 알고리즘을 적용하여 적절한 이미지 프로세싱을 거쳐서 임상의 적정한 영상을 획득한다. 방사선과에서 적절한 의료 영상 형성을 위하여 적용하는 이미지 프로세싱 파라미터(Image Processing Parameters)는 Edge, Frequency, Contrast, Latitude, LUT, Noise 등의 영상 증강의 과정은 기술력 및 업체 알고리즘에 따라 다르게 적용되고 있다. 따라서 본 논문에서는 디지털 방사선 환경에서의 최종의 임상 영상을 위한 이미지 증강의 파라미터들의 적정 세팅 값의 기준을 제시하고자 한다. 그리고 각 병원들의 의료 영상을 바탕으로 이미지 프로세싱 파라미터들을 변화하여 각 파라미터들의 세부적인 기준 세팅값을 연구하며, 실제적인 파라미터 변화에 대한 적합한 의료 영상을 디지털방사선시스템의 영상 평가 방법을 도식화하여 결과를 제시하고, 향후 임상에서 적응 및 활용 가능한 객관적인 영상 파라미터에 대한 특성 평가의 응용을 정립하고자 한다. 또한 다양한 표본 병원의 디지털 방사선 환경에서 적정 파라미터 값들을 조사하여 임상에서 영상의 화질에 미치는 영향으로 특성 평가의 객관적인 기준의 변조전달함수(MTF)의 공간해상력을 제시하고 한다.