• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.4
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• pp.53-60
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• 2008

Electron detectors used in scanning electron microscope accept electrons emitted from the specimen and convert them to an electrical signal that, after amplification, is used to modulate the gray-level intensities on a cathode ray tube, producing an image of the specimen. Electron detector is one of the key components dominating the performance of scanning electron microscope so that the development of electron detectors having high performance is indispensable to acquire high quality images using scanning electron microscope. In this paper, we designed and manufactured an electron detector and conducted a couple of image capture experiments using it. In particular, scintillator which generates light photons when it is struck by high-energy electrons was manufactured and experimental studies on the optimization of manufacturing condition was carried out. From experiments to evaluate the performance of our detector, it was verified that the performance of our detector is equivalent to or better than that of the conventional one.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.94.2-94.2
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• 2011

Electron microbursts, energetic electron precipitation having duration less than 1 sec, have been thought to be generated by chorus wave and electron interactions. While the coincidence of chorus and microburst occurrence supports the wave-particle interaction theory, more crucial evidences have not been observed to explain the origin of microbursts. We propose the measurement of energy dispersion of microbursts could be an evidence supporting wave-particle theory. During chorus waves propagate along magnetic field, the resonance condition should be satisfied at different magnetic latitude for different energy electrons. If we observed electron microbursts at low altitude, the arrival time of different energy electrons should make unique dispersion structures. In order to observe such energy dispersion, we need a detector having fast time resolution and wide energy range. Our study is motivated from defining the time resolution and energy range of the detectors required to measure microburst energy dispersions. We performed test particles simulation to investigate how electrons interact with simple coherent waves like chorus waves. We compute a large number of electron's trajectories and successfully produce energy dispersion structures expected when microbursts are observed with 10 msec time resolution detectors at the altitude of 600 km. These results provide useful information in designing electron detectors for the future mission.

• Progress in Superconductivity
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• v.14 no.2
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• pp.92-95
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• 2012

Superconducting detectors are promising as ion detectors for time-of-flight mass spectrometers (TOF MS). They can achieve mass-independent detection efficiency even for macromolecular bombardments, because output signals are produced through the deposited kinetic energy at ion impact instead of secondary electron emission that is the ion detection mechanism of conventional microchannel plate (MCP) detectors or secondary electron multipliers (SEM). Among the superconducting detectors, the superconducting strip ion detectors (SSIDs), which consist of several hundreds of superconducting lines with a width of a few hundreds nm and a thickness of a few tens of nm, have a fast response time of less than 1 ns. Inherently, the response time of SSIDs is determined by kinetic inductance, so that it was difficult to realize a fast SSID with a large detection area. However, we succeeded in realizing the detector size up to $5{\times}5mm^2$ without response time degradation by using a parallel configuration.

• Applied Microscopy
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• v.46 no.1
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• pp.1-5
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• 2016

Recent cryo-electron microscopy (EM) studies reported the structure of various types of proteins at high resolution which is sufficient to visualize the intermolecular interaction at near atomic level. There are two main factors that cause the advances in cryo-EM; the development of image processing techniques, such as single particle analysis, and the improved electron detection devices. Although the atomic structures of small and asymmetric proteins are not yet to be determined by cryo-EM, this striking improvement implies the bright prospect of the application in biomedical studies. This study reviews the recently published studies reported high resolution structures using improved imaging analysis techniques and electron detectors. Furthermore, we will discuss about the future aspects of cryo-EM application.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.285-288
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• 2002

In this study, we investigate electron transport properties in xenon gas by using a Monte Carlo technique for electrons with energies below 10 keV. First of all, we determine a set of electron collision cross sections with xenon by scrutinizing the cross section data taken from many publications. Then, the W value and the Fano factor for electrons in gaseous xenon are computed by the Monte Carlo simulation on the assumption that electrons undergo single collision events including elastic, excitation and ionization processes. We also evaluate the production number of excited atoms.

• Journal of The Korean Astronomical Society
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• v.51 no.4
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• pp.111-117
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• 2018

A numerical method is proposed to calculate the response of detectors measuring particle energies from incident isotropic fluxes of electrons and positive ions. The isotropic flux is generated by injecting particles moving radially inward on a hypothetical, spherical surface encompassing the detectors. A geometric projection of the field-of-view from the detectors onto the spherical surface allows for the identification of initial positions and momenta corresponding to the clear field-of-view of the detectors. The contamination of detector responses by particles penetrating through, or scattering off, the structure is also similarly identified by tracing the initial positions and momenta of the detected particles. The relative contribution from the contaminating particles is calculated using GEANT4 to obtain the geometric factor of the instrument as a function of the energy. This calculation clearly shows that the geometric factor is a strong function of incident particle energies. The current investigation provides a simple and decisive method to analyze the instrument geometric factor, which is a complicated function of contributions from the anticipated field-of-view particles, together with penetrating or scattered particles.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Nuclear Engineering and Technology
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• v.29 no.6
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• The Journal of the Korea Contents Association
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• v.10 no.6
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• pp.329-335
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• 2010

Digital imaging detectors can use a variety of detection materials to convert X-ray radiation either to light or directly to electron charge. Many detectors such as amorphous silicon flat panels, CCDs, and CMOS photodiode arrays incorporate a scintillator screen to convert x-ray to light. The digital radiography systems based on semiconductor detectors, commonly referred to as flat panel detectors, are gaining popularity in the clinical & hospital. The X-ray detectors are described between a-Silicon based indirect type and a-Selenium based direct type. The DRS of detectors is used to convert the x-ray to electron hole pairs. Image processing is described by specific image features: Latitude compression, Contrast enhancement, Edge enhancement, Look up table, Noise suppression. The image features are tuned independently. The final enhancement result is a combination of all image features. The parameters are altered by using specific image features in the different several hospitals. The image in a radiological report consists of two image evaluation processes: Clinical image parameters and MTF is a descriptor of the spatial resolution of a digital imaging system. We used the edge test phantom and exposure procedure described in the IEC 61267 to obtain an edge spread function from which the MTF is calculated. We can compare image in the processing parameters to change between original and processed image data. The angle of the edge with respect to the axes of detector was varied in order to determine the MTF as a function of direction. Each MTF is integrated within the spatial resolution interval of 1.35-11.70 cycles/mm at the 50% MTF point. Each image enhancement parameters consists of edge, frequency, contrast, LUT, noise, sensitometry curve, threshold level, windows. The digital device is also shown to have good uniformity of MTF and image parameters across its modality. The measurements reported here represent a comprehensive evaluation of digital radiography system designed for use in the DRS. The results indicate that the parameter enables very good image quality in the digital radiography. Of course, the quality of image from a parameter is determined by other digital devices in addition to the proper clinical image.