• Journal of Microbiology and Biotechnology
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• 제31권10호
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• pp.1373-1382
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• 2021

Plant growth promoting rhizobacteria (PGPR) are a group of bacteria that can increase plant growth; but due to unfavorable environmental conditions, PGPR are biologically unstable and their survival rates in soil are limited. Therefore, the suitable application of PGPR as a plant growth stimulation is one of the significant challenges in agriculture. This study presents an intelligent formulation based on Bacillus velezensis VRU1 encapsulation enriched with nanoparticles that was able to control Rhizoctonia solani on the bean. The spherical structure of the capsule was observed based on the Scanning Electron Microscope image. Results indicated that with increasing gelatin concentration, the swelling ratio and moisture content were increased; and since the highest encapsulation efficiency and bacterial release were observed at a gelatin concentration of 1.5%, this concentration was considered in mixture with alginate for encapsulation. The application of this formulation which is based on encapsulation and nanotechnology appears to be a promising technique to deliver PGPR in soil and is more effective for plants.

• Journal of Microbiology and Biotechnology
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• 제6권2호
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• pp.147-149
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• 1996

Poly(3-hydroxybutyrate) (PHB) was synthesized and accumulated intracellularly to a high concentration (7 g/l) by cultivating recombinant Escherichia coli XL1-Blue (pSYLl05) in a complex medium containing 20 g/l glucose. The morphology of PHB granules was examined by transmission electron microscopy. The PHB granules synthesized in recombinant E. coli were much larger than reported values for wild type microorganisms, and were often irregularly shaped. Some cells were apparently extruding PHB into the medium, which suggests that PHB granules maintain some fluidity and cells become fragile due to PHB accumulation.

• 한국식품영양과학회지
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• 제22권6호
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• pp.664-672
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• 1993

알코올의 섭취가 Se가 vitamin E 수준을 달리한 흰주의 체내 Se 수준 및 심장, 간세포 형태에 미치는 영향을 살펴보기 위하여 평균 체중이 58~62g인 Sprague-Dawley계의 젖을 갖뗀 숫쥐 72마리를 12군으로 나누어 Se의 수준을 식이 kg당 0mg, 0.4mg,10mg으로 달리하고 vitamin E는 식이 Kg당 0mg, 150mg으로 하여 7주간 사육시켰다. 알코올 섭취는 실험시작 3주째부터 ethanol을 급수물에 10% 맞추어 섭취군과 비섭취군으로 나누어서 섭취군에서는 제한없이 먹게 하였다. 얻어진 결과를 요약하면 다음과 같다. 혈액과 소변의 Se의 수준은 식이내 Se 수준의 차이에 따라 유의적인 차이를보여 식이내 Se수준이 높은 H-군, 정상적으로 섭취한 C-군, 결핍된 L-군의 순으로 높았으며 알코올 섭취군들은 낮은 경향을 보였다. 간장, 신장의 Se의 농도는 식이 Se 수준에 비례하여 H-, C-, L- 순으로 높았으며 알코올 섭취로 인한 Se농도의 변화는, 알코올을 섭취한 군둘의 Se 농도가 낮은 경향이나 신장에서는 반대로 높은 경향이었다. 전자현미경을 통한 관찰에서 심근세포 조직형태의 변화는 식이내 Se수준이 높은 H-군들, Se수준이 낮은 L-군에서 lysosome의 증가 및 지방적 출현, mitochondria의 종창, 특히 모세혈관의 내피세포에 심한 종창이 일어났고, 알코올을 섭취한 군들에도 심근세포의 종창, lysoscme의 증가, mitochondria 변화를 보였다. Se을 과잉으로 섭취하고 vitamin E를 정상으로 섭취한군(HC-)에서는 특이한 변화가 없었으나 알코올을 투여한 HCA군에서 지방적이 나타났다. 특히 Se과 vitamin E이 결핍되고 알코올을 섭취한 LLA군에서는 lysosome의 증가 및 지방적이 많이 증가 하였다.

• 한국재료학회지
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• 제9권5호
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• 한국결정성장학회지
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• 제4권1호
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• pp.83-91
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• 1994

직경 2인치 갈륨비소 단결정을 위한 수직온도구배냉각 결정성장치를 제작하여 크롬과 인듐이 함께 도핑된 반절연 갈륨비소 단결정을 성장하였다. 함께 도핑된 결정에 대해서,불순물의 편석계수는 크롬 또는 인듐만을 도핑한 결정에서 편석계수와 비교할 때 변하지 않고 같은 값을 갖는다. 크롬과 인듐의 농도는 결정의 종자부분 부터 꼬리부분까지 각각 $2{\Times}10^{16}~3{\Times}10^{17} cm^{-3}$과 $2{\Times}10^{19}~3{\Times}10^{20} cm^{-3}$의 범위내에서 분포되었다. 평균 전위밀도는 결정의 전 영역에 걸쳐 약 $8000cm^{-2}$ 미만으로 관측되었다. 또한 인듐농도가 증가함에 따라 전위 밀도가 $1000m^{-2}$ 미만으로 감소하는 격자강화의 효과도 관찰할 수 있었다. 갈륨비소의 결정성장 방향에 따라 캐리어의 농도는 $10^{16}$에서 $10^8cm^{-3}$로 감소한 반면 비저항 값은 $10^{-2}$에서 $10^8$ Ohm-cm로 급격하게 증가하였다. 반절연의 특성은 크롬농도 약 $6{\Times}10^{16}cm^{-3}$의 농도이상에서 얻을 수 있었다. 성장된 단결정 내의 깊은 준위는 두 개의 전자덫인 $E_C-0.81eV, E_C-0.35eV$와 두 개의 정공덫인$E_V+0.89eV, E_V+0.65eV$이다.

• 한국재료학회지
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• 제30권3호
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• pp.117-122
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• 2020

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (E_F) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

• 대한기계학회논문집B
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• 제29권4호
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• pp.512-518
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• 2005

Polymeric fibers with nanometer-scale diameters are produced by electrospinning. When the electrical forces at the surface of a polymer solution or melt overcome the surface tension then electrospinning occurs. Polycarbonate has been electrospun. Electrospun fibers are observed by scanning electron microscopy and transmission electron microscopy. The surface morphology of e-spun fiber has been studied by many variables that are involved in different polymer concentrations, solvent mixing ratios and ambient parameters. The average diameters of the electrospun fibers range from 200 nm to 4,570 nm when the PC concentration is decreasing from 15.5\;wt{\%}\;to\;25\;wt{\%}.$ The higher concentration of the polymer solution makes the fibers thicker due to preventing the fiber stretching. With respect evaporation effects, the solvent mixing ratios cause significant changes of the fiber size distribution. As a matter of fact the fiber diameter steadily increases with increasing amount of DMF until the solvent mixture is at THF:DMF ratio of 60:40.

• Journal of Electrochemical Science and Technology
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• 제11권3호
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• pp.310-317
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• 2020

A development of disposable strip-type galactose sensor for point-of-care testing (POCT) was studied, which was constructed using screen-printed carbon electrodes. Galactose levels were determined by the redox reaction of galactose oxidase in the presence of potassium ferricyanide as an electron transfer mediator in a small sample volume (i.e., less than 1 µL). The optimal performance of biosensor was systematically designated by varying applied potential, operating pH, mediator concentration, and amount of enzyme on the electrode. The sensor system was identified as a highly active for the galactose measurement in terms of the sensitivity (slope = 4.76 ± 0.05 nA/µM) with high sensor-to-sensor reproducibility, the linearity (R² = 0.9915 in galactose concentration range from 0 to 400 µM), and response time (t_95% = <17 s). A lower applied potential (i.e., 0.25 V vs. Ag/AgCl) allowed to minimize interference from readily oxidizable metabolites such as ascorbic acid, acetaminophen, uric acid, and acetoacetic acid. The proposed galactose sensor represents a promising system with advantage for use in POCT.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.36-36
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• 1995

The cubic (zinc blende) CdSe eppilayers were grown on GaAs(100) substrates by electron beam (e-beam) evapporation technique. X-ray scans with copper $K\alpha$ radiation indicate that the CdSe eppilayers are zinc blende. The lattice pparameter obtained from the (400) reflection is 6.077$\AA$, which is in excellent agreement with the value repported in the literature for zinc blende CdSe. The orientation of as-grown CdSe eppilayer is determined by electron channeling ppatterns(ECpp). The crystallinity of heteroeppitaxial CdSe layers were investigated based on the double crystal x-ray rocking curve(DCRC). The deppendence of the rocking curve width on layer thickness was studied. The FWHM(full width at half maximum) of CdSe eppilayers grown on GaAs(100) substrates is decreasing with increasing eppilayer thickness. The carrier concentration and mobility of the as-grown eppilayers deduced Hall data by van der ppauw method, are about 7$\times$1017 cm-3 and 2$\times$102 $\textrm{cm}^2$ / sec at room tempperature, resppectively. The energy gapp was determinded from the pphotocurrent sppectrum. In pphotocurrent sppectrum of a 1-${\mu}{\textrm}{m}$-thick CdSe eppilayer at 30K, the ppeak at 1.746 eV is due to the free exciton of cubic CdSe. In summary, We have shown that eppilayers of zinc blende CdSe can be grown on GaAs(100) substrates by e-beam, desppite the large mismatch between eppilayer and substrate, as well as the natural ppreference for CdSe to form in the wurtzite structure.

• Journal of Plant Biology
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• 제36권4호
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• pp.313-319
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• 1993

Photoproduction of hydrogen by free and polyvinylalcohol (PVA)-immobilized spinach chloroplasts was investigated. Immobilization of chloroplast with PVA increased the functional stability of the chloroplast during storage. PVA-immobilized chloroplasts preserved photosynthetic electron transport activity much better than free chloroplasts. The hydrogen production of free chloroplast decreased to 17% of initial activity after storage of six days. The hydrogen production of the PVA-immobilized chloroplast, however, showed 44% of initial activity after storage of 15 days. The maximal rate of hydrogen production was accomplished at 2$^{\circ}C$ under the light intensity above 116 $\mu$E.m-2.s-1. The amount of hydrogen produced was proportional to the chlorophyll concentration. The hydrogen production was inhibited by DCMU treatment, indicating hydrogen production is dependent on photosynthetic electron transport. These results suggest that PVA is a good candidate for the immobilization matrix of chloroplasts for the photoproduction of hydrogen.