• Journal of Life Science
• /
• v.22 no.2
• /
• pp.259-265
• /
• 2012

A bacterial strain, CK214, exhibiting high motility on an LB agar (1.5%, w/v) surface was isolated from the environment. The formation of unusual agar shrinking around colonies on agar plates was observed. The strain grew on minimal media containing pure agar as a sole carbon source. The cell-free culture supernatant of CK214 generated a reduced form of sugar in the in vitro reaction with the use of pure agar as a substrate, suggesting the secretion of an agar-degrading enzyme. The CK214 strain showed swarming motility on the solid media containing a wide range of concentrations of agar (0.5, 1.0, 1.5, 2.0% w/v). Various tests, including Gram staining, API analysis, and phylogenetic analysis based on 16S rDNA sequences identified that the CK214 strain was a G(+) rod-shaped bacterium grouped in genus Paenibacillus. Electron microscopic analysis demonstrated that the P. CK214 strain is peritrichously flagellated. Through transposon random mutagenesis, several agar-degrading activity defective mutants (ADMs) were generated. These mutants will be used in the future experimentation for the study of the correlation between agar-degrading activity and motility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.5-5
• /
• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.3
• /
• pp.71-76
• /
• 2017

The electrical behavior and flexibility of the screen printed Ag circuits were investigated with infrared radiation sintering times and sintering temperatures. Electrical resistivity and radio frequency characteristics were evaluated by using the 4 point probe measurement and the network analyzer by using cascade's probe system, respectively. Electrical resistivity and radio frequency characteristics means that the direct current resistance and signal transmission properties of the printed Ag circuit. Flexibility of the screen printed Ag circuit was evaluated by measuring of electrical behavior during IPC sliding test. Failure mode of the Ag printed circuits was observed by using field emission scanning electron microscope and optical microscope. Electrical resistivity of the Ag circuits screen printed on Pl substrate was rapidly decreased with increasing sintering temperature and durations. The lowest electrical resistivity of Ag printed circuit was up to $3.8{\mu}{\Omega}{\cdot}cm$ at $250^{\circ}C$ for 45 min. The crack length arisen within the printed Ag circuit after $10{\times}10^4$ sliding numbers was 10 times longer than that of after $2.5{\times}10^4$ sliding numbers. Measured insertion loss and calculated insertion loss were in good agreements each other. Insertion loss of the printed Ag circuit was increased with increasing the number of sliding cycle.

• Food Science of Animal Resources
• /
• v.37 no.5
• /
• pp.698-707
• /
• 2017

This study was performed to investigate the impacts of irradiation sources on quality attributes of low-salt sausage during refrigerated storage. Control sausage was prepared with 1.5% sodium chloride (NaCl), whereas low-salt sausage was formulated with 0.75% NaCl (a 50% reduction; L-control). Sausage samples were vacuum-packaged, and low-sausages were irradiated with gamma-ray, electron-beam and X-ray at 5 kGy, respectively. The samples were stored at $4^{\circ}C$ for 28 d to determine changes in quality attributes. The pH of low-salt sausages was unaffected by irradiation at 5 kGy (p>0.05). Higher redness values were found at irradiated low-salt sausages compared to control (p<0.05). The hardness, gumminess and chewiness of control sausage were higher than those of low-salt sausages (p<0.05). However, there were no significant differences in the textural parameters between low-salt sausage treatments. The overall sensory acceptability score of irradiated/low-salt sausages were lower than L-control due to decreased scores for cooked meat flavor but increased radiolytic off-flavor (p<0.05). The initial 2-thiobarbituric acid-reactive substances (TBARS) values of irradiated/low-salt sausages were higher than control and L-control (p<0.05). However, the TBARS values of irradiated treatments were significantly lower than control at the end of storage. Irradiation could effectively inhibit the microorganism growth (total aerobic bacteria, coliforms, Enterobacteriaceae, and Pseudomonas spp.) in low-salt sausages (p<0.05). Therefore, our findings show that irradiation could be to improve microbial safety of low-salt sausages, and suggest that further studies should be necessary to reducing radiolytic off-flavor of irradiated/low-salt sausages.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.157-157
• /
• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.137-137
• /
• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of Biomedical Engineering Research
• /
• v.28 no.2
• /
• pp.306-309
• /
• 2007

PXLM(Phosphor based x-ray light modulator) has a combined structure by phosphor, photoconductor, and liquid crystal and it can realize x-ray image of high resolution in clinical diagnosis area. In this study, we fabricated a photoconductor and investigated electrical and optical properties to confirm application possibility of radiator detector of PXLM structure. As photoconductor, amorphous selenium(a-Se), which is used most in DR(Digital radiography) of direct conversion method, was used and for formation of thin film, it was formed as $20{\mu}m-thick$ by using thermal vacuum evaporation system. For a produced a-Se film, through XRD(X-ray diffraction) and SEM(Scanning electron microscope), we investigated that amorphous structure was uniformly established and through optical measurement, for visible light of 40 $0\sim630nm$, it had absorption efficiency of 95 % and more. After fabricated a-Se film on the top of ITP substrate, hybrid structure was manufactured through forming $Gd_2O_3:Eu$ phosphor of $270{\mu}m-thick$ on the bottom of the substrate. As the result to confirm electrical property of the manufactured hybrid structure, in the case of appling $10V/{\mu}m$, leakage current of $2.5nA/cm^2$ and x-ray sensitivity of $7.31nC/cm^2/mR$ were investigated. Finally, we manufactured PXLM structure combined with hybrid structure and liquid crystal cell of TN(Twisted nematic) mode and then, investigated T-V(Transmission vs. voltage) curve of external light source for induced x-ray energy. PXLM structure showed a similar optical response with T-V curve that common TN mode liquid crystal cell showed according to electric field increase and in appling $50\sim100V$, it showed linear transmission efficiency of $12\sim18%$. This result suggested an application possibility of PXLM structure as radiation detector.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.2
• /
• pp.68-72
• /
• 2002

The $\beta$-$FeSi_2$ and $\alpha$-$FeSi_2$ single crystals were synthesized by chemical vapour transport (CVT) using iodine as a transporting agent from the commercially available $FeSi_2$ powder. The $FeSi_2$ powder together with iodine were sealed in an evacuated quartz ampoule and the ampoule then being placed in two-zone electrical furnace for growing crystal. The CVT of $FeSi_2$ with iodine yielded $\beta$-$FeSi_2$ and $\alpha$-FeSi$_2$ single crystals at deposition temperature of 750 and $950^{\circ}C$ respectively. The source temperature was $1050^{\circ}C$ in both cases. The crystals of the $\alpha$-FeSi$_2$ phase were typically plate shaped with dimensions of about $10\times 10 \textrm{mm}^2$, whereas the crystals of orthorhombic $\beta$-$FeSi_2$ phase grew predominantly in the fonts of thin needle of about 10 mm in length. The composition of$\alpha$-FeSicrystal determined by electron probe microanalysis (EPMA) resulted in Si-rich $FeSi_{2.58}$ . 57. Furthermore, the CVT $\beta$-$FeSi_2$ crystal was found to be transformed to the high temperature $\alpha$-$FeSi_2$phase above $930^{\circ}C$.

• Journal of Life Science
• /
• v.27 no.1
• /
• pp.72-77
• /
• 2017

Inorganic iron is essential for various metabolic processes, including RNA synthesis, electron transport, and oxygen detoxification in microorganisms. Many bacterial pathogens compete for iron acquisition in diverse environmental condition such as host. Salmonella Typhimurium SL1344 also requires inorganic iron as a cofactor for growth. When a M9 minimal liquid medium was supplemented with ethylenediamine di-o-hydroxyphenylactic acid (EDDA) which acts as an iron-chelating agent, growth of Salmonella Typhimurium SL1344 in the supplemented medium was completely arrested by deficient of useful iron under iron-depleted condition. However, a number of siderophores, which are small, high-affinity iron chelating compounds secreted by microorganisms such as bacteria and fungi, were produced for utilization of restricted iron under iron-depleted condition. A M9 minimal liquid medium complemented with human transferrin (hTf)-iron complex turned completely off production of siderophores, but growth of Salmonella Typhimurium SL1344 maintained level similar to compare one complemented with iron (III) chloride (FeCl3). This means that human transferrin (hTf)-bound iron can utilize via directly interaction with Salmonella Typhimurium SL1344 without productions of siderophores. Through construction and analysis of negative mutant for utilization of human transferrin (hTf)-bound iron, we confirm that the bacterium can directly use human transferrin (hTf)-bound iron without extracellularly intermediated carriers such as siderophores.

• The Korean Journal of Food And Nutrition
• /
• v.25 no.4
• /
• pp.729-736
• /
• 2012

The purpose of this study is to determine the possibility of using cultured wild ginseng roots as a natural health food source. To accomplish this purpose, the contents of general and antioxidative nutrients of cultured wild ginseng roots were measured. The contents of carbohydrate, crude protein, crude lipid and ash are 61.72%, 17.36%, 0.23% and 10.90%, respectively. Further, the calories of cultured wild ginseng roots were 323.97 kcal. Total dietary fiber was 82.13%. The protein contained a total of 18 different kinds of amino acids. The contents of amino acids were 16.15 g. The K was the largest mineral followed by P, Ca, and Mg, which means cultured wild ginseng roots is alkali material. The contents of saturated fatty acids and unsaturated fatty acids were 0.23 g, and 0.62 g, respectively. Crude saponine content was 25.87 mg/g. Total phenolic contents of cultured wild ginseng roots were 11.2mg/g, and total flavonoids contents were estimated as 4.2mg/g. The electron donating ability of cultured wild ginseng roots were 24.7~31.6%. The nitrite scavenging activity was pH dependent, and was highest at pH 1.2 and lowest at pH 6.0. The cultured wild ginseng roots extract showed the highest reducing power (0.06) at the concentration of $1,000{\mu}g/m{\ell}$. Based on the above results, we deemed that the cultured wild ginseng roots might have potential antioxdant activities.