• Title/Summary/Keyword: Electron Source

검색결과 1,005건 처리시간 0.121초

라인형 플라즈마 소스를 이용한 ALD 공정 연구 (Study of ALD Process using the Line Type Plasma Source)

  • 권기청;조태훈;최진우;송세영;설제윤;이준신
    • 반도체디스플레이기술학회지
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    • 제15권4호
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    • pp.33-35
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    • 2016
  • In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

탄소나노튜브를 이용한 고휘도 X-선원용 전자빔원 개발 (Development of an electron source using carbon nanotube field emittes for a high-brightness X-ray tube)

  • 김선규;허성환;조성오
    • 한국진공학회지
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    • 제14권4호
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    • pp.252-257
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    • 2005
  • 고휘도 마이크로빔 X-선원에 사용할 고휘도 전자빔원을 탄소나노튜브를 이용하여 설계, 제작하였다. 전자빔원은 탄소나노튜브 팁을 이용한 음극, 전자빔 인출용 그리드, 전자빔 가속용 양극으로 이루어진 삼극관 형태의 구조를 가진다. 설계된 휘도 값을 얻기 위하여 X-선 발생부에서의 전자빔 직경이 5 $\mu$m 이하, 빔전류가 약 30 $\mu$A 이상이 요구된다 이러한 요구조건을 만족시키기 위하여, EGUN Code를 이용하여 전자빔의 궤적 및 공간분포 등을 계산함으로써, 탄소나노튜브 팁 및 전자빔원의 구조 등을 최적화 하였다. 제작된 탄소나노튜브 팁은 직경 200 $\mu$m 의 텅스텐 와이어를 전기화학적으로 에칭하여 그 끝을 뽀족하게 만든 뒤 텅스텐의 끝 부분에 탄소나 노튜브를 화학기상법으로 증착하여 제작하였다. 제작된 탄소나노튜브를 이용하여 전자빔 인출실험을 수행하였다. 개발 중인 탄소나노튜브 팁을 이용한 고휘도 전자빔원의 설계 특성 및 기초 실험결과를 보고한다.

A novel ceramic GEM used for neutron detection

  • Zhou, Jianrong;Zhou, Xiaojuan;Zhou, Jianjin;Jiang, Xingfen;Yang, Jianqing;Zhu, Lin;Yang, Wenqin;Yang, Tao;Xu, Hong;Xia, Yuanguang;Yang, Gui-an;Xie, Yuguang;Huang, Chaoqiang;Hu, Bitao;Sun, Zhijia;Chen, Yuanbo
    • Nuclear Engineering and Technology
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    • 제52권6호
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    • pp.1277-1281
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    • 2020
  • A novel ceramic Gas Electron Multiplier (GEM) has been developed to meet the demand of high counting rate for the neutron detection which is an alternative to 3He-based detector at China Spallation Neutron Source (CSNS). An experiment was performed to measure the neutron transmittance of ceramic-GEM and FR4-GEM at the small angle neutron scattering (SANS) instrument. The result showed the ceramic-GEM has higher transmittance and less self-scattering especially for cold neutrons. One single ceramic GEM could give a gain of 102-104 in the mixture gas of Ar and CO2 (90%:10%) and its energy resolution was about 27.7% by using 55Fe X ray of 5.9 keV. A prototype has been developed in order to investigate the performances of the ceramic GEM-based neutron detector. Several neutron beam tests, including detection efficiency, spatial resolution, two-dimensional imaging, and wavelength spectrum, were carried out at CSNS and China Mianyang Research Reactor (CMRR). The results show that the ceramic GEM-based neutron detector is a good candidate to measure the high intensity neutrons.

Hot electron에 의한 CMOS 차동증폭기의 압력 offset 전압 모델링 (Hot Electron Induced Input offset Voltage Modeling in CMOS Differential Amplifiers)

  • Jong Tae Park
    • 전자공학회논문지A
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    • 제29A권7호
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    • pp.82-88
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    • 1992
  • This paper presents one of the first comprehensive studies of how hot electron degradation impacts the input offset voltage of a CMOS differential amplifiers. This study utilizes the concept of a virtual source-coupled MOSFET pair in order to evaluate offset voltaged egradation directly from individual device measurement. Next, analytical models are developed to describe the offset voltage degradation. These models are used to examine how hot electron induced offset voltage is affected with the device parameters.

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전류 측정 방식에 의한 안과용 $^{90}$ Sr 선원의 교정 (The Calibration of $^{90}$ Sr Ophthalmic Applicator by Measuring Electron Current)

  • 이병용;신동오;김현자;홍성언;최은경;장혜숙
    • 한국의학물리학회지:의학물리
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    • 제2권2호
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    • pp.149-154
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    • 1991
  • 안과용 $^{90}$ Sr 선원에서 방출하는 $\beta$선의 갯수를 직접 측정함으로써 (전류 측정)표면 선량을 계산하는 방법을 고안하여 실제 교정에 응용하였다. 안과용 $^{90}$ Sr선원에서 방출하는 전체 $\beta$선의 갯수 및 선원의 면적, 전자의 물속에서의 저지능 등을 고려하였다. 선원의 정확한 면적 측정은 필림을 이용하였으며, 평균 저지능은 상기 선원에서 방출되는 $\beta$선의 에너지 스펙트럼을 분석함으로써 얻을 수 있었다. 이 방법과 $^{90}$ Sr으로 교정한 TLD칩을 이용한 교정 방법과의 결과를 비교하였다. 전류 측정 방식에 의한 결과는 63.5$\pm$5.1cGy/sec이었고, TLD칩에 의한 측정 결과는 50.7$\pm$7.3cGy/sec로 오차 범위내에서 일치하였다. 그러나 제작사 보증서에 의하면 46.8$\pm$9.4cGy/sec로 측정값에 비하여 36%의 차이를 보여 주었다.

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다중 음극 전자빔을 이용한 대면적 플라즈마 소스 (A Large Area Plasma Source Using Multi-cathode Electron Beam)

  • 강양범;전형탁;김태영;정기형;고동균;정재국;노승정
    • 한국재료학회지
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    • 제9권9호
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    • pp.861-864
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    • 1999
  • 다중 음극 전자빔을 이용한 새로운 플라즈마 소스를 설계하고 제작하였다. 대면적의 플라즈마를 발생시키기 위해 다중 음극을 채택하였다. 다중 음극 전자빔 플라즈마 소스(multi-cathode electron beam plasma source, MCEBPS)를 이용하여 300mm 또는 그 이상의 직경을 가진 웨이퍼에 안정한 플라즈마를 생성시킬 수 있었다. 텅스텐 필라멘트를 음극으로 사용하였다. 직경 320mm의 넓이에서, plasma potential $V_p$와 floating potential $V_f$ 모두 균일하게 유지되었고 $V_p와 V_f$의 차이도 낮은 값으로 나타났다. 플라즈마 밀도는 약 $10^{10} cm^{-3}$ 정도로 측정되었고 반경걸에 따른 편차는 작게 나타났다.

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몬테카를로 시뮬레이션을 이용한 복숭아의 방사선 조사 (Monte Carlo Simulation of Irradiation Treatment of Peaches (Prunus persica L. Batsch))

  • 김종순;김동현;박종민;최원식;권순홍
    • 한국산업융합학회 논문집
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    • 제21권6호
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    • pp.337-344
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    • 2018
  • Food irradiation is important not only in ensuring safety but also improving antioxidant activity of peaches. Our objective was to establish the best irradiation treatment for peaches by calculating dose distribution using Monte Carlo simulation. 3-D geometry and component densities of peaches, extracted from CT scan, were entered into MCNP to obtain simulated dose distribution. Radiation energies for electron beam were 1.35 MeV (low energy) and 10 MeV (high energy). Co (1.25 MeV) and the Husman irradiator, containing three sealed Cs source rods in an annular array, were used for gamma irradiation. At 1.35 MeV electron beam simulation, electrons penetrated well beyond the peach skin, enough for surface treatment for microorganisms and allergens. At 10 MeV electron beam simulation, for top-beam only treatment, doses at the core were the highest and for double beam treatment, the electron energy was absorbed by the entire sample. At Co source, the radiation doses were presented on the whole area. At Cs source, the dose uniformity ratios were 2.78 for one source and 1.48 for three ones at 120 degrees interval. Proper control of irradiation treatment is critical to establish confidence in the irradiation process.

Electron transport properties of Y-type zigzag branched carbon nanotubes

  • MaoSheng Ye;HangKong, OuYang;YiNi Lin;Quan Ynag;QingYang Xu;Tao Chen;LiNing Sun;Li Ma
    • Advances in nano research
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    • 제15권3호
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    • pp.263-275
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    • 2023
  • The electron transport properties of Y-type zigzag branched carbon nanotubes (CNTs) are of great significance for micro and nano carbon-based electronic devices and their interconnection. Based on the semi-empirical method combining tight-binding density functional theory and non-equilibrium Green's function, the electron transport properties between the branches of Y-type zigzag branched CNT are studied. The results show that the drain-source current of semiconducting Y-type zigzag branched CNT (8, 0)-(4, 0)-(4, 0) is cut-off and not affected by the gate voltage in a bias voltage range [-0.5 V, 0.5 V]. The current presents a nonlinear change in a bias voltage range [-1.5 V, -0.5 V] and [0.5 V, 1.5 V]. The tangent slope of the current-voltage curve can be changed by the gate voltage to realize the regulation of the current. The regulation effect under negative bias voltage is more significant. For the larger diameter semiconducting Y-type zigzag branched CNT (10, 0)-(5, 0)-(5, 0), only the value of drain-source current increases due to the larger diameter. For metallic Y-type zigzag branched CNT (12, 0)-(6, 0)-(6, 0), the drain-source current presents a linear change in a bias voltage range [-1.5 V, 1.5 V] and is symmetrical about (0, 0). The slope of current-voltage line can be changed by the gate voltage to realize the regulation of the current. For three kinds of Y-type zigzag branched CNT with different diameters and different conductivity, the current-voltage curve trend changes from decline to rise when the branch of drain-source is exchanged. The current regulation effect of semiconducting Y-type zigzag branched CNT under negative bias voltage is also more significant.

ICP 광원 시스템의 Ne:Xe Ne:Ar 혼합가스의 전자온도 및 전자밀도의 특성 연구 (The Electron temperature and Density properties of Mixing gas in ICP Lighting system(Ne:Xe, Ne:Ar))

  • 최기승;이종찬;최용성;박대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.2424-2426
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    • 2005
  • In whole world consciousness of environment maintenance have increased very quickly for he end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe and Ne:Ar mixing gas lamp improvements firing voltage of Xe gas lamp. Purpose and subject of this study are understand, efficiency, ideal of Ne:Xe and Ne:Ar plasma which mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by langmuir probe data. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe and Ne:Ar.

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Cl-based 유도결합 플라즈마의 전자에너지 분포함수 (Electron energy distribution functions in an inductively coupled a-based plasma)

  • 김관하;김창일;김동표;강영록
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.91-91
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    • 2005
  • Electron energy distribution functions and plasma parameters such as electron temperature ($T_e$) and electron density ($n_e$) in low-pressure Cl-based plasmas have been measured. As the $Cl_2/A4$ gas mixing ratio, the $BCl_3$ gas addition and the process pressure increases, the electron energy probability and the electron temperature decreases. In case of source power increases, electron energy probability increases, whereas the electron temperature was not related.

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