• Journal of Surface Science and Engineering
• /
• v.27 no.5
• /
• pp.253-260
• /
• 1994

Ta-N films were reactively sputter deposited by dc magnetron sputtering from a Ta target with a various Ar-N, gas ratio. Electrical resistivity of pure Ta film was 150$\mu$$\Omega$cm and decreased initially with nitrogen addition, and then increased to a value of 220$\mu$$\Omega$-cm~260$\mu$$\Omega$-cm at 9%~23% nitrogen partial flow. Rutherford backscattering spectrometry(RBS) and Auger electron spectroscopy (AES) analysis show that nitrogen content in the film is increased with the nitrogen partial flow. The film contains 58at.% nitrogen at 36% nitrogen partial flow. Both the phase and the microstructure of the as-deposisted films were investigated by x-ray diffractometry(XRD) adn transmission electron microscopy (TEM) at various nitrogen content. The phase of pure Ta film is identified as $\beta$-Ta with a 200$\AA$~300$\AA$ grain size. The phase of Ta film is changed to bcc-Ta as small amount of nitrogen is added. Crystalline Ta2N film was deposited at 24at.% nitrogen content. Amorphous phase is formed over a range of nitrogen content from about 33at.% to 35at.% while crystalline fcc-TaN is observed to form at 39at.%~48at.% nitrogen content.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.39.2-39.2
• /
• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
• /
• v.31 no.1
• /
• pp.13-23
• /
• 2005

This study was performed to investigate mistletoe extract-induced apoptosis in oral squamous cell carcinoma. In vivo study, HN22 cells were xenografted in nude mice. After tumor was experimentally induced, mistletoe extract was directly injected on the tumor mass. The specimens were evaluated using light and transmission electron microscopes. In vitro study, HN22 cells were cultured and exposed to mistletoe extract. The cells were evaluated using transmissin electron microscope. To evaluate apoptotic cells, flow cytometric analysis was done. The results were obtained as follows: 1. Light microscopic view of tumor mass showed necrosis at 2-4 weeks. 2. Transmission electron micrographs of tumor mass showed apoptosis and necrosis. 3. In TEM view of cell lines, necrosis and apoptosis were shown with mistletoe extract at $300{\mu}g/ml$, apoptosis was shown with mistletoe extract at $100{\mu}g/ml$. 4. In flow cytometric analysis, early and late apoptosis was shown when using caspase-3Ab and annexin-V, but no significant change was noted when using mebstain and Apo2.7 Ab. In this study, mistletoe extract induced necrosis and apoptosis in the tumor mass was induced by HN22 cells, early and late apoptosis in vitro study. Mistletoe extract was likely to induce cell death in oral squamous cell carcinoma through apoptosis.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.832-834
• /
• 1992

Using the PECVD method, the silicon nitride films were deposited by changing the $SiH_4/NH_3$ gas flow ratio from 0.2 to 1.4 at an interval of 0.2, AES, FTIR, and Spectroscopic Ellipsomter were used to analyze the film composition and structure, the refractive index, and the deposition rate. Also the C-V analysis was used to estimate the memory performance in the capacitor type MNOS memory devices, which utilized native oxide as the tunneling barrier, with the silicon nitride by the above deposition conditions. As a result, it was confirmed that the performance of MNOS memory devices with PECVD silicon nitride was comparable to that with LPCVD or APCVD silion nitride.

• Journal of Korean Society for Atmospheric Environment
• /
• v.33 no.4
• /
• pp.370-376
• /
• 2017

This study was performed to investigate whether the decomposition process of $SF_6$ using an electron beam is economically reasonable when applied to the actual field. To do this, electron beam experiment and economic analysis were conducted. The experiment conditions are initial concentration of 1% of $SF_6$, 1 mA of input energy and 15 mA of flow rate with $H_2$ as an additive which were obtained from our previous research. As a result, removal efficiency of $SF_6$ was 90% for 8 hours continuously. In addition, economic analysis shows positive results in terms of using $SF_6$ decomposition process using electron beam. According to the analysis, the revenue is approximately 1.66 billion won in the first year and 3 billion won in the second year.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.658-661
• /
• 2002

Chemical species during growth of carbon nanotubes (CNTs) in direct current-plasma enhanced chemical vapor deposition were studied in details using $C_3H_4-NH_3$ and $CO-NH_3$ mixtures through optical emission spectroscopy (OES). In the $C_3H_4-NH_3$ system, the relative intensities of CN (388.3 nm) and CH (431.4 nm) decreased and that of $C_2$ (436 nm) increased, leading to $sp^2$-graphization into the CNT structure, leading to improvement of field emission property of CNTs. In the $CO-NH_3$ system, the trend is completely reversed. Attributing to the atomic oxygen for helping the graphitization of carbon, CNTs could be grown under the flow rate of CO (180 sccm)-$NH_3$ (10 sccm). Through these results, we suggest the growth mechanism in our system.

• Journal of Surface Science and Engineering
• /
• v.34 no.2
• /
• pp.89-96
• /
• 2001

N- or O-doped STS304 stainless films were synthesized by an unbalanced magnetron sputtering process with various argon and reactive gas ($N_2$, $O_2$) mixtures. These films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and Knoop microhardness tester. The Results from X-ray diffraction (XRD) analysis showed that a STS304 stainless steel film synthesized without reactive gas using a bulk STS304 stainless steel target had a ferrite bcc structure ($\alpha$ phase), while the N-doped STS304 stainless film was consisted of a nitrogen supersaturated fcc structure, which hsa a strong ${\gamma}$(200) phase. In the O-doped films, oxide Phases ($Fe_2$$O_3$ and $Cr_2$$O_3$) were observed from the films synthesized under an excess $O_2$ flow rate of 9sccm. AES analysis showed that nitrogen content in N-doped films increased as the nitrogen flow rate increased. Approximately 43 at.%N in the N-doped film was measured using a nitrogen flow rate of 8sccm. In O-doped film, approximately 15 at.%O was detected using a $O_2$ flow rate of 12sccm. the Knoop microhardness value of N-doped film using a nitrogen flow rate of 8 sccm was measured to be approximately $H_{ k}$ 1200 and this high value could be attributed to the fine grain size and increased residual stress in the N-doped film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.221-221
• /
• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• 한국연소학회:학술대회논문집
• /
• 2014.11a
• /
• pp.191-194
• /
• 2014

The characteristics of laminar free jet flow with having applied AC electric fields have been investigated experimentally. A single electrode configuration was adopted such that electric fields were applied directly to nozzle and thus the surrounding could be an infinite ground. The experimental results showed that the jet flow with AC was modified significantly. At a certain axial distance, the laminar fuel stem was broken down and subsequently it was separated into three parts when AC electric fields were applied over a certain voltage in a range of frequencies less than 120 Hz. The breakdown point was measured by varying applied AC voltage and frequency. The effect of applying electric fields to jet flow was discussed in detail.

• Journal of the Korean Applied Science and Technology
• /
• v.32 no.2
• /
• pp.320-325
• /
• 2015

Flow mark is a sort of surface defect on the composite that can arise during the filling stage of the injection molding process. The purpose of this study is to clarify a mechanism of the flow mark which appears on the surface of injection molded Polypropylene (PP) through the characterization of the surface structure. The materials used in this report are PP/rubber and PP/talc compounding, which are widely used in automobile part. The flow mark shows two different constitutions, such as a luster part and a cloud part on the surface of the injection molded PP. We have investigated the surface structure of PP/rubber and PP/talc composites by using scanning electron microscope (SEM), energy dispersive x-ray spectroscopy (EDAX) and optical microscopy (OM). As a result, the cloud part contains higher contents of the rubber and talc compare to the luster part.