• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1268-1270
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• 1994

Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.442-449
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) films grown by a box cathode sputtering (BCS) were investigated as a function of oxygen flow ratio. A sheet resistance of $42.6{\Omega}/{\Box}$, average transmittance above 88% in visible range, and root mean spare roughness of $2.7{\AA}$ were obtained even in the IZO layers grown at room temperature. In addition, it is shown that electrical characteristics of the top-emitting organic light emitting diodes (TOLEDs) with the BCS grown-IZO top cathode layer is better than that of TOLEDs with DC sputter grown IZO top cathode, due to absence of plasma damage effect. Furthermore the effects of oxygen flow ratio in IZO films are investigated, based on x-ray photoelectron spectroscopy (XPS), ultra violet/visible (UV/VIS) spectro-meter, scanning electron microscopy (SEM), and atomic force microscopy (AFM) analysis results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in 300$^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying NH$_3$ gas flow rate. As NH$_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES(optical emission spectroscopy). N-H bonding(3390cm$\^$-1/) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in SiH$_4$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.132-136
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• 2009

SiOC thin film of hybrid-type that is the limelight as low dielectric material of next generation were deposited by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Manufactured samples are analyzed components by measuring FT/IR absorption lines. It is a tendency that seems to be growing of Si-O-Si(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The chemical shift in the XPS analysis was shown in the specimens between the BTMSM=26 sccm and BTMSM = 28 sccm. The binding energy of Si 2p, C 1s and O 1s electron orbit spectra was the low-est at the specimen of the BTMSM=26 sccm. From the results of electrical Properties using the 1 MHz C - V measurements, the dielectric constant was 2.32 at the specimen with the BTMSM = 26 sccm.

• Journal of Welding and Joining
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• v.27 no.6
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• pp.43-48
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• 2009

In this study, Cu-based bulk metallic glass (BMG) coatings were deposited by atmospheric plasma spraying (APS) process with different process conditions (with- and without hydrogen gas). As adding the hydrogen gas, thermal energy in the plasma flame increased and induced difference in the melting state of the Cu-based BMG particles. The microstructure and mechanical properties of the coatings were analyzed using a scanning electron microscope (SEM) with an energy dispersive spectroscopy (EDS) and nano-indentation tester in the light of phase analysis. It was elucidated by the nano-indentation tests that un-melted region was a mainly amorphous phase which showed discrete plasticity observed as the flow serrations on the load.displacement (P - h) curves, and the curves of solidified region showed lower flow serrations as amorphous phase mingled with crystalline phase. Oxides produced during the spraying process had the highest hardness value among the phases and were well mixed with other phases resulted from the increase in melting degree.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.12
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• pp.2247-2252
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• 2008

The SiOC films as the carbon doped silicon oxide film were prepared with the variation of flow rater ratios by plasma enhanced chemical vapor deposition. The samples were analyzed by the fourier transform infrared spectroscopy, I-V measurement and scanning electron microscopy. The samples were shown the chemical shift according to the flow rate ratios, and the grain did not formed at the sample with hybrid properties. The leakage currents decreased according to the increasing of the substrate temperature at the sample with hybrid properties, but the potential barrier increased.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.776-783
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• 2019

Laser welding is usually a more effective method than electron-beam one since a vacuum chamber is not required. It is important for joining Zr-1%Nb (E110) alloy in a manufacturing process of nuclear fuel rods. In the present work, effect of energy parameters of pulsed laser welding on properties of butt joints of sheets with a thickness of 0.5 mm is investigated. The most efficient combination has been found (8-11 J pulse energy, 10-14 ms pulse duration, 780-810 W peak pulse power, 3 Hz pulse frequency, 1.12 mm/s welding speed). The results show that ultimate strength under static loading can not be used as a quality criterion for zirconium alloys welds. Increased shielding gas flow rate does not allow to protect weld metal totally and contributes to defect formation without using special nozzles. Several types of imperfections of the welds have been found, but the major problem is branching microcracks on the surface of the welds. It is difficult to identify the cause of their appearance without additional research on improving the welding zone protection (gas composition and flow rate as well as nozzle configuration) and studying the hydrogen content in the welds.

• Bulletin of the Korean Chemical Society
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• v.17 no.2
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• pp.162-167
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• 1996

Two redox processes of methyl viologen (+2/+, +/0) in acetonitrile were investigated by using channel electrode voltammetric and in situ electrochemical ESR methods. Two separated unequal plateau currents of the first (+2/+) and second (+/0) redox processes of the viologen were observed in the channel electrode voltammograms and showed a cube-root depedndence on the electrolyte flow rate, respectively. The simple Levich analysis resulted in two different diffusion coefficients of $D_{+2}=2.2{\times}10^{-5}\;cm^2/s$ and $D_+=3.0{\times}10^{-5}cm^2/s$ from the limiting currents. In situ electrochemical ESR studies were performed for the monocation radicals generated at the potentials of the two plateau currents in the electrolyte flow range $1.3{\times}10^{-1}{\geq}v_f{\geq}2.7{\times}10^{-3}\;cm^3/s$. Backward implicitfinite difference method was employed to simulate the electrochemical kinetic problem of two sequential electron transfers ($MV^{+2}+e{\leftrightarrows}MV^+,\;MV^{+}+e{\leftrightarrows}MV^0$) coupled with reversible comproportionation ($MV^{2+}+MV^0{{\leftrightarrows}^{k_f}_{k_b}}2MV^+$). $k_f$ was found to be greater than ($10^6M^{-1}s^{-1}.

• Journal of Electrochemical Science and Technology
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• v.14 no.2
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• pp.131-138
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• 2023

The carbon felt is usually hired as electrodes for vanadium redox flow battery (VRFB). In the study, surface modification of carbon felt under CO₂ atmosphere with variables of operating various temperature ranges between 700℃ and 900℃. The qualitative and quantitative analysis were carried out such as scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) to observe degree of surface modification. Result of XPS analysis confirmed increase of carbon and oxidation functional group on the surface with increase of temperature. SEM image was discovered similar phenomena. Electrochemical characteristics such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) revealed the improved electrode performance with increase of temperature. However, the electrochemical performance under treatments temperature of 900℃ was less than that of under treatment temperature of 850℃ due to weight loss at the treatment temperature of 900℃. From the CV and EIS results, the best electrochemical characteristics was at the temperature of 850℃. That of at the temperature of 900℃ was decreased due to weight loss. The energy efficiencies (EE) obtained from full cell test were 69.37, 80.76, 82.45, and 75.47%, at the temperature of 700, 800, 850, and 900℃, respectively.