• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.11
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• pp.1019-1022
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• 2016

In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.

• Journal of electromagnetic engineering and science
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• v.17 no.1
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• pp.20-28
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• 2017

A fully integrated dual-band CMOS power amplifier (PA) is developed for 802.11n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output transformers with low loss, which is provided by using 2:2 and 2:1 output transformers for the 2 GHz PA and the 5 GHz PA, respectively. In addition, several design issues in the dual-band PA design using WLP technology are addressed, and a design method is proposed. All considerations for the design of dual-band WLP PA are fully reflected in the design procedure. The 2 GHz WLP CMOS PA produces a saturated power of 26.3 dBm with a peak power-added efficiency (PAE) of 32.9%. The 5 GHz WLP CMOS PA produces a saturated power of 24.7 dBm with a PAE of 22.2%. The PA is tested using an 802.11n signal, which satisfies the stringent error vector magnitude (EVM) and mask requirements. It achieved an EVM of -28 dB at an output power of 19.5 dBm with a PAE of 13.1% at 2.45 GHz and an EVM of -28 dB at an output power of 18.1 dBm with a PAE of 8.9% at 5.8 GHz.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1162-1166
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• 2001

NiZn-ferrite was synthesized from waste catalysts, which were produced from styrene monomer process and buried underground as an industrial wastes, and its magnetic properties were investigated. Nickel oxide and zinc oxide powders were mixed with finely ground waste catalysts, and spinel type ferrite was obtained by calcination at 900$\^{C}$ and sintering at 1230$\^{C}$ for 5 hours. The intial permeability was measured and reflection loss was calculated from S-parameters for the composition of Ni$\_$x/Zn$\_$1-x/Fe$_2$O$_4$(x=0.36, 0.50, 0.66). NiZn-ferrite synthesized from waste iron oxide catalyst showed a feasibility for the use as electromagnetic wave absorber in X-band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.156-161
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• 2014

We have investigated the optical properties of plamonic waveguide with tapered structure based on InP material for photonic integrated circuit(PIC). The proposed plasmonic waveguide is covered with the Ag thin film to generate the plasmonic wave on metallic interface. The optical characteristics of plasmonic waveguide were calculated using the three-dimensional finite-difference time-domain method. The plasmonic waveguide was fabricated with the lengths of 2 to $10{\mu}m$ and the widths of 400 to 700 nm, respectively. The plasmonic mode and optical loss were measured. The optimum plasmonic length is $10{\mu}m$ and widths are 600 and 700 nm in the fabricated waveguide. This plasmonic waveguide can be directly integrated with other conventional optical devices and can be essential building blocks of PIC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.397-401
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• 2005

In this paper, a slot-coupled microstrip antenna with switchable polarization is proposed for the polarization diversity applications in the complicated communication environment. The proposed antenna is fed by a microstrip line through one of two slots located with the interval of $\lambda{g}/4$ in the ground plane. By switching the PIN diode between opened and shorted termination which is located at the tip of the microstrip line, the switching function between horizontal and vertical polarization was confirmed experimentally. The measured resonant frequencies of the fabricated antenna are $2.41\;\cal{GHz}\;2.40\;\cal{GHz}$ and the cross polarization levels are $19\;\cal{dB},\;23\;\cal{dB},\;the\;-10\;\cal{dB}$ return loss bandwidths are $95\;\cal{MHz}\;100\;\cal{MHz}$ in horizontal and vertical polarization, respectively, and the antenna gain is almost $6\;\cal{dBi}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.7
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• pp.1182-1190
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• 2001

In this paper, microstrip photonic bandgap (PBG) structure with special perforation patterns etched on the line itself is analyzed and optimized in shape, then used for harmonic tuning of power amplifier. This PBG has an advantage in being fabricated and grounded. The dimension of unit lattice is enlarged vertically, but its input and output line maintain 50 Ω using tapered line. This modification from original structure can lessen possible error in etching PCB. The analysis and design of PBG structure are acquired from using EM simulation. The measured insertion loss of the final structure is 0.3 ∼0.4 dB, and its bandwidth of stopband is 6∼7 GHz. Measured results of improved characteristics by using PBG structure at the output of the power amplifier are 0.72∼0.99 dB in output power, 1.14∼7.8 % in PAE, and 1 dBc in the third IMD.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.7
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• pp.1086-1093
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• 2001

A new linearization technique for RF high-power amplifiers(HPAs) using n-th order error signal generator (ESGn) is proposed. The n-th order ESG generates an error signal based on the complex envelope transfer characteristics of the HPA, which is combined at the output of the HPA. Therefore, the higher-order nonlinearlities are not affected by the ESG$\_$n/ and the stability of the linearized system is guaranteed due to the inherent open-loop configuration. Moreover, the output delay loss can be avoided, because the error signal is generated with the input signal of the HPA. The IMD(intermodulation distortion) improvement obtained applying the ESG$\_$7/ to 5 W class A HPA in cellular band demonstrates the feasibility of the proposed postdistortion system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1105-1111
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• 2006

In this paper, using low-temperature co-fired ceramic(LTCC) based system-in-package(SiP) technology, a very compact power amplifier LTCC module was designed, fabricated, and then characterized for 60 GHz wireless transmitter applications. In order to reduce the interconnection loss between a LTCC board and power amplifier monolithic microwave integrated circuits(MMIC), bond-wire transitions were optimized and high-isolated module structure was proposed to integrate the power amplifier MMIC into LTCC board. In the case of wire-bonding transition, a matching circuit was designed on the LTCC substrate and interconnection space between wires was optimized in terms of their angle. In addition, the wire-bonding structure of coplanar waveguide type was used to reduce radiation of EM-fields due to interconnection discontinuity. For high-isolated module structure, DC bias lines were fully embedded into the LTCC substrate and shielded with vias. Using 5-layer LTCC dielectrics, the power amplifier LTCC module was fabricated and its size is $4.6{\times}4.9{\times}0.5mm^3$. The fabricated module shows the gain of 10 dB and the output power of 11 dBm at P1dB compression point from 60 to 65 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.25-33
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• 1998

In this paper, we describe a single-gate MESFET mixer at PCS(Personal Communication Service) frequency band. The PCS frequency band is 1965~2025 MHz in FR and 140 MHz in IF irrespectly. The design of the mixer was executed by microwave simulator, EEsof Libra. The matching network is consisted of rectangular inductor, MIM capacitor and open stub. The ma- nufacture work was accomplished by the micro-pen and wedge-bonder. The mixer showed $6.69\pm0.65$ dB of conversion gain, $-14.9\pm3.5$dB of RF reflection coefficient and 57.83 dB of LO/IF isolation at 10 dBm of LO power when LO frequency is 1855 MHz. When this mixer is used at PCS terminal, IF-amplifier which compensates the conversion loss of diode mixer may be omitted.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.60-71
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• 1998

The propagation environment is effected by Rayleigh fading, Rician fading, path loss and lognormal shadowing in microcellular mobile radio system. In these surroundings we analysed the performance on received Rician signals among L Rician interferers and the characteristics of lognormal shadowing for various parameters such as reuse distance, cluster size, signal to interference power ratio and protection ratio using outage probability. We also studied various channels Rayleigh signal and Rician interferer, Rician signal and Rayleigh interferer, Rician signal and Rician interferer and so on using outage probability. The theoretical extention and computer simulation effectively analysed the characteristic of lognormal shadowed Rician channel.