• International Journal of Aeronautical and Space Sciences
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• v.18 no.2
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• pp.215-221
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• 2017

An electromagnetic (EM) wave absorber reduces the possibility of radar detection by minimizing the radar cross section (RCS) of structures. In this study, a radar absorbing structure (RAS) was applied to the leading edge of a blended wing body aircraft to reduce RCS in X-band (8.2~12.4GHz) radar. The RAS was composed of a periodic pattern resistive sheet with conductive lossy material and glass-fiber/epoxy composite as a spacer. The applied RAS is a multifunctional composite structure which has both electromagnetic (EM) wave absorbing ability and load-bearing ability. A two dimensional unit absorber was designed first in a flat-plate shape, and then the fabricated leading edge structure incorporating the above RAS was investigated, using simulated and free-space measured reflection loss data from the flat-plate absorber. The leading edge was implemented on the aircraft, and its RCS was measured with respect to various azimuth angles in both polarizations (VV and HH). The RCS reduction effect of the RAS was evaluated in comparison with a leading edge of carbon fabric reinforced plastics (CFRP). The designed leading edge structure was examined through static structural analysis for various aircraft load cases to check structural integrity in terms of margin of safety. The mechanical and structural characteristics of CFRP, RAS and CFRP with RAM structures were also discussed in terms of their weight.

• Journal of electromagnetic engineering and science
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• v.2 no.1
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• pp.22-27
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• 2002

This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. This LNA is optimized for linearity in consideration of the out-of-band-termination capacitance. This LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -2i dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.931-935
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• 2003

A multilayer two-stage LC bandpass filter using low-temperature cofired-ceramic(LTCC) is proposed in this paper. The proposed bandpass filter is composed of two ceramic substrates with different dielectric constant instead of single ceramic material from top to bottom layer. Inductive elements are designed in a low permitivity ceramic layer to reduce parasitic effects and loss, while capacitive elements are designed in a high permitivity ceramic layer for size reduction. The proposed filter has 950 MHz center &equency, 118 MHz tractional bandwidth, and 3.5 dB insertion loss. And, the total size of this filter is 2.5${\times}$2.5${\times}$l.4mm$^3$. The performance of filter is analyzed by changing coupling capacitance between each resonator.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.992-999
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• 2008

This paper describes the design of SPST PIN diode switch which has a 2 kW high power handling capability within $50{\mu}s$ switching speed in $20{\sim}100$ MHz VHF-band. Design factors were investigated and it was confirmed by simulation that the characteristics of insertion loss, VSWR, and isolation met design goal. Also, the capability to handle 2 kW high power with maximum fast switching speed less than $20{\mu}s$ was confirmed and insertion loss less than 0.2 dB, VSWR less than 1.17:1, and isolation higher than 40 dB were obtained by experiments.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.167-173
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• 2005

The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.341-344
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• 2000

There are many researches to increase bandwidth of the microstrip patch antenna for wireless LAN. In spite of broad bandwidth, Bow-Tie microstrip patch antenna, broadband microstrip patch antenna, has disadvantages that are low gain and big size. In this paper, stacked Bow-Tie microstrip patch antenna for wireless LAN is designed in 5.725～5.825GHz band. This antenna has characteristics that are broadband bandwidth, high gain and small size compared with microstrip patch antenna. In simulated results, the return loss is -34.2dB at 5.78GHz and bandwidth is 11.345% for VSWR is 2:1 and 7.75% for VSWR is 1.5:1. In measured results, the return loss is -38-45dB at 5.78GHz and bandwidth is 13% for VSWR is 2:1 and 5.6% for VSWR is 1.5:1.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Journal of electromagnetic engineering and science
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• v.9 no.2
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• pp.98-104
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• 2009

An InGaP/GaAs MMIC LC VCO designed with Harmonic Noise Frequency Filtering(HNFF) technique is presented. In this VCO, internal inductance is found to lower the phase noise, based on an analytic understanding of phase noise. This VCO directly drives the on-chip double balanced mixer to convert RF carrier to IF frequency through local oscillator. Furthermore, final power performance is improved by output amplifier. This paper presents the design for a 1.721 GHz enhanced LC VCO, high power double balance mixer, and output amplifier that have been designed to optimize low phase noise and high output power. The presented asymmetric inductance tank(AIT) VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz offset and a tuning range from 1.46 GHz to 1.721 GHz. In measurement, on-chip down-converter shows a third-order input intercept point(IIP3) of 12.55 dBm, a third-order output intercept point(OIP3) of 21.45 dBm, an RF return loss of -31 dB, and an IF return loss of -26 dB. The RF-IF isolation is -57 dB. Also, a conversion gain is 8.9 dB through output amplifier. The total on-chip down-converter is implanted in 2.56${\times}$1.07 mm$^2$ of chip area.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.102-106
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• 2008

A new compact UWB bandpass filter with sharp-rejection, low insertion-loss and flat group-delay is developed In this paper, using the transversal filtering combined with SIR(stepped impedance resonator) concept. To form the required passband, multiple out-of-band transmission zeros are created around band-edges, securing very low insertion loss in the very wide frequency range. Also it is found to be beneficial to realize a sharp rejection of higher order with a relatively small overall size and simultaneously have very smoothly varying group-delay which is proper for the UWB applications. The validity of the proposed technique is proven theoretically and experimentally.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.8
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• pp.701-708
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• 2016

A new design for an ultra-wideband microstrip-to-FGCPW(Finite Ground Coplanar Waveguide) transition is presented. The proposed transition provides the electric field and impedance matching between adjacent transmission lines by ground shaping. The transition is designed on the analytical expressions of whole transitional structure. Conformal mapping is applied to obtain the characteristic impedance of FGCPW with bottom aperture within 3.3 % accuracy as compared with the EM-simulation results. As design example, the fabricated transition in back-to-back configuration provides insertion loss less than 1 dB per transition and return loss better than 10 dB for frequencies from 9 GHz to over 40 GHz.