Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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The Design of SiGe HBT LNA for IMT-2000 Mobile Application

  • Lee, Jei-Young (RFIC Center, Mission Technology Research Center, Kwangwoon University) ;
  • Lee, Geun-Ho (RFIC Center, Mission Technology Research Center, Kwangwoon University) ;
  • Niu, Guofu (Alabama Microelectronics Science and Technology Center, Auburn University, Al 36849, USA) ;
  • Cressler, John D. (Alabama Microelectronics Science and Technology Center, Auburn University, Al 36849, USA) ;
  • Kim, J.H. (RFIC Center, Mission Technology Research Center, Kwangwoon University) ;
  • Lee, J.C. (RFIC Center, Mission Technology Research Center, Kwangwoon University) ;
  • Lee, B. (RFIC Center, Mission Technology Research Center, Kwangwoon University) ;
  • Kim, N.Y. (RFIC Center, Mission Technology Research Center, Kwangwoon University)
  • Published : 2002.05.01
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Abstract

This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. This LNA is optimized for linearity in consideration of the out-of-band-termination capacitance. This LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -2i dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.

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References

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