• Title/Summary/Keyword: Electrochemically Oxidized Porous Silicon Films

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Formation and humidity-sensing properties of porous silicon oxide films by the electrochemical treatment (전기화학적 처리에 의한 다공질 실리콘 산화막의 형성과 감습 특성)

  • 최복길;민남기;류지호;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.45 no.1
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    • pp.93-99
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    • 1996
  • The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by optimizing a porosity of PSL. (author). refs., figs.

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Formation and Humidity-Sensitive Characteristics of Anodically Oxidized porous Silicon Films (다공질 실리콘 양극산화막의 형성과 감습특성)

  • Choi, Bok-Gil;Rhie, Dong-Hee;Ryoo, Jee-Ho;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1066-1068
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    • 1995
  • The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical oxidation and current density. The humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by increasing a porosity of PSL.

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Electrical properties of the Porous polycrystalline silicon Nano-Structure as a cold cathode field emitter

  • Lee, Joo-Won;Kim, Hoon;Lee, Yun-Hi;Jang, Jin;Oh, Myung-Hwan;Ju, Byung-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.1035-1038
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    • 2002
  • The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2${\mu}m$-polycrystalline silicon was electrochemically anodized in HF: ethanol (=1:1) mixture as a function of the anodizing condition including a current density and anodizing time. After anodizing, the PNS was thermally oxidized for 1 hr at 900 $^{\circ}C$. Then, 20nm, 30nm, 45nm thickness of Au films as a top electrode were deposited by E-beam evaporator. Among the PNSs fabricated under the various kinds of anodizing conditions, the PNS anodized at a current density of 10mA/$cm^2$ for 20 sec has the lowest turn-on voltage and the highest emission current than those of others. Also, the electron emission properties were investigated as functions of measuring temperature and the different thickness of Au film as a top-electrode.

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