The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Formation and humidity-sensing properties of porous silicon oxide films by the electrochemical treatment

전기화학적 처리에 의한 다공질 실리콘 산화막의 형성과 감습 특성

  • 최복길 (공주대 공대 전기공학과) ;
  • 민남기 (고려대 자연과학대 제어계측공학과) ;
  • 류지호 (고려대 대학원 전기공학과) ;
  • 성영권 (고려대 공대 전기공학과)
  • Published : 1996.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by optimizing a porosity of PSL. (author). refs., figs.

Keywords