• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.141-149
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• 2009

The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.227-230
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• 2008

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.164-164
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• 2007

Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.342-342
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• 2012

Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.185-185
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• 2010

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.