• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1430-1431
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• 2011

To develope the transparent conducting oxide(TCO) films is one of the essential technologies to improve various properties of electro-optical devices such as dye-sensitized solar cells(DSCs). ITiO thin film is considered one of the candidates as TCO electrodes of DSCs because it shows many advantages such as the high transparency in long wavelength range above 700nm and excellent properties of electrical necking between nanoporous TiO2 and ITiO transparent electrode. This paper presents the effect of sputtering processes on the structural, electrical and optical properties of ITiO thin film deposited by r.f. magnetron sputtering. The effect of doping concentration of Ti on the chemical compounds and C axis-orientation properties of were mainly studied experimentally. The morphology and electrical properties were greatly influenced by deposition processes, especially by the doping concentration of Ti. The $3.8{\times}10^{-4}{\Omega}{\cdot}cm$ of minimum volume resistivity were obtained under the experimental conditions of gas pressure 7mTorr, substrate temperature $300^{\circ}C$, and 2.5% of Ti doping concentration.

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.215-220
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• 1998

We proposed an in situ measurement set-up and technique to measure the various electro-optic(E-O) properties of the E-O polymer. Using the proposed measurement set-up, the electro-optic effect and birefringence of unpoled side-chain E-O polymer induced by the strong dc and ac electric field were observed. The dependence of the E-O coefficients on the various poling conditions were measured with real time. To evaluate the thermal stability of the poled polymer the relaxation of the E-O effect was measured and the result was compared with well known polymer materials. The proposed measurement reduces the number of experimental steps and saves measurement time.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.324-326
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• 2008

Novel X-shaped molecules containing perfluoroalkyl alkanes as a side chain have been synthesized and characterized. The properties of mesophases were investigated by a combination of differential scanning calorimetry (DSC), polarizing optical microscopy (POM), X-ray diffractometry (XRD) and electro-optical measurements.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.80-90
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• 1995

In this paper, methods of designing CPW(coplanar waveguide) traveling-wave electrodes are described and their properties are discussed. Especially, the effect of buffer layer thickness to the microwave characteristics of the CPW electrodes are studied in detail. The trade-off relationship between buffer layer thickness and electro-optical properties of the devices are clearly revealde. The microwave characteristics and driving voltage can be further improved by using selected parameters suggested in this paper. To reduce time and effort in designing CPW electrode structure, exact analytical models are proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.424-425
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• 2006

Zinc sulfide is a well-known host material of phosphor emitting different radiations dependent on different doping impurities of metallic ion. It emits green, blue, orange-yellow or white colors by doping with activators such as copper, silver, manganese and so on. In this study, manganese, copper and chlorine doped ZnS phosphor (ZnS:Mn,Cu,Cl) was synthesized by solid-state reaction method. The optical properties were investigated according to different concentrations of sulfur and activators used during the synthesis process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1051-1057
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• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.330-330
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• 2008

It is widely investigated to liquid crystal (LC) alignment using non-contact alignment method such as ion-beam (IB) irradiation, UV alignment, and oblique deposition. Because conventional rubbing method has some drawbacks. These include defects from dust and electrostatic charges and rubbing scratch during rubbing process. In addition, rubbing method needs additional process to remove these defects. Therefore rubbing-free methods like ion-beam irradiation are strongly required. We studied LC alignment effect on poly imide surface by IB irradiation and electro-optical (EO) characteristics of twisted nematic liquid crystal display (TN-LCD). In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) (SE-150 from Nissan Chemical) surface was observed. We also achieved low pretilt angle as a function of ion-beam irradiation intensity. In addition, it can be obtained the good EO properties of the IB-aligned TN-LCD on PI surface. Some other experiments results and discussion will be included in the poster.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.547-551
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• 2006

We studied liquid crystal (LC) alignment with ion beam (IB) on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide surface using obliquely ion beam (IB) exposure with new IB type equipment. A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-LCD on polyimide surface. Also, the EO characteristics of the ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using new type IB equipment is same or more superior than ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using Kaufman-type Ar ion gun.