• Title/Summary/Keyword: Electrical-electronics Engineering

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Undergraduate Power Electronics Laboratory - Applying TSMST Method

  • Jakopovic, Zeljko;Sunde, Viktor;Benci, Zvonko
    • Journal of Power Electronics
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    • v.10 no.6
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    • pp.621-627
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    • 2010
  • This paper presents a TSMST (Theory - Simulation - Measurement - Simulation - Theory) method for power electronics laboratory. The method successfully integrates theory, simulation and measurement, thus enabling better integration of student's knowledge and better usage of inadequate number of laboratory hours. Students are attracted with relatively simple tasks to be solved and modern, but economical laboratory equipment. A significant part of the assignments can be made at home, thus lowering the pressure on students to finish the tasks on time. The proposed method is described on three basic examples explaining characteristic phases of the TSMST method.

Non-Isolated Unidirectional Three-Port Cuk-Cuk Converter for Fuel Cell/Solar PV Systems

  • Chandrasekar, Balaji;Chellammal, N.;Nallamothu, Bhargavi
    • Journal of Power Electronics
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    • v.19 no.5
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    • pp.1278-1288
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    • 2019
  • A DC-DC Non-Isolated Three-Port Cuk-Cuk (NI-TPCC) converter for interfacing renewable energy sources (RESs) such as Fuel Cell (FC) and Photovoltaic (PV) energy with a DC load is presented in this paper. It features single-stage power conversion from both of the input ports to the load port. The proposed NI-TPCC converter is designed based on the classical Cuk converter. The operational modes and power flow are analyzed in the continuous conduction mode (CCM), and the relationships among the port voltages are derived. Continuous currents in all three ports with less ripple enhance the performance of a fuel cell and its operating life. Furthermore, the output inductor is shared with both of the input ports, which reduces the number of active and passive components. The effectiveness of the designed NI-TPCC converter has been validated through simulation and experimental results.

An Improved Wireless Power Charging System Capable of Stable Soft-Switching Operation Even in Wide Air Gaps (넓은 공극 범위에서도 안정된 소프트 스위칭 동작 가능한 개선된 무선 전력 충전 시스템)

  • Woo, Jeong-Won;Moon, Yu-Jin;Kim, Eun-Soo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.27 no.3
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    • pp.180-191
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    • 2022
  • In this paper, a single-stage alternating current (AC)-DC converter is proposed for the automated-guided vehicle wireless charging system. The proposed converter is capable of soft-switching under all input voltage (VAC: 220 Vrms ± 10%), load conditions (0-1 kW), and air gap changes (40-60 mm) by phase control at a fixed switching frequency. In addition, controlling a wide output voltage (Vo: 39~54 VDC) is possible by varying the link voltage and improving the input power factor and the total harmonic distortion factor. Experimental results were verified by making a prototype of a 1-kW wireless power charging system that operates with robustness to changes in air gaps.

The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma

  • Woo, Jong-Chang;Choi, Chang-Auck;Joo, Young-Hee;Kim, Han-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.2
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    • pp.67-70
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    • 2013
  • In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

Modeling and Prediction of Electromagnetic Immunity for Integrated Circuits

  • Pu, Bo;Kim, Taeho;Kim, SungJun;Kim, SoYoung;Nah, Wansoo
    • Journal of electromagnetic engineering and science
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    • v.13 no.1
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    • pp.54-61
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    • 2013
  • An equivalent model has been developed to estimate the electromagnetic immunity for integrated circuits under a complex electromagnetic environment. The complete model is based on the characteristics of the equipment and physical configuration of the device under test (DUT) and describes the measurement setup as well as the target integrated circuits under test, the corresponding package, and a specially designed printed circuit board. The advantage of the proposed model is that it can be applied to a SPICE-like simulator and the immunity of the integrated circuits can be easily achieved without costly and time-consuming measurements. After simulation, measurements were performed to verify the accuracy of the equivalent model for immunity prediction. The improvement of measurement accuracy due to the added effect of a bi-directional coupler in the test setup is also addressed.

Relative azimuth estimation algorithm using rotational displacement

  • Kim, Jung-Ha;Kim, Hyun-Jun;Kim, Jong-Su;Lee, Sung-Geun;Seo, Dong-Hoan
    • Journal of Advanced Marine Engineering and Technology
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    • v.38 no.2
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    • pp.188-194
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    • 2014
  • Recently, indoor localization systems based on wireless sensor networks have received a great deal of attention because they help achieve high accuracy in position determination by using various algorithms. In order to minimize the error in the estimated azimuth that can occur owing to sensor drift and recursive calculation in these algorithms, we propose a novel relative azimuth estimation algorithm. The advantages of the proposed technique in an indoor environment are that an improved weight average filter is used to effectively reduce impulse noise from the raw data acquired from nodes with inherent errors and a rotational displacement algorithm is applied to obtain a precise relative azimuth without using additional sensors, which can be affected by electromagnetic noise. Results from simulations show that the proposed filter reduces the impulse noise, and the acquired estimation error does not accumulate with time by using proposed algorithm.

Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

  • Jang, Young In;Seo, Jae Hwa;Yoon, Young Jun;Eun, Hye Rim;Kwon, Ra Hee;Lee, Jung-Hee;Kwon, Hyuck-In;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.554-562
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    • 2015
  • This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

New Circuit Topology of Single-Ended Soft-Switching PWM High Frequency Inverter and Its Performance Evaluations

  • Deguchi Y.;Moisseev S.;Nakaoka M.;Hirota I.;Yamashita H.;Omori H.;Terai H.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.247-250
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    • 2001
  • This paper presents a simple and cost effective circuit topology of single-ended type high frequency quasi-resonant PWM inverter using IGBTs, which can operate under wide soft switching operation range based on ZCS for main power switch as compared with a conventional active voltage-clamped ZVS-PWM high frequency quasi-resonant inverter developed previously. In principle, this new circuit topology can efficiently operate under a constant frequency PWM control-based power regulation scheme. In particular, it is noted that the zero current soft switching (ZCS) commutation can achieve for the main active power switch. On the other hand, the zero voltage soft switching (ZVS) commutation can also achieve for the auxiliary active power switch. The operating principle of this high-frequency Inverter treated here and its power regulation characteristics are illustrated on the basis of the simulation and feasible experimental results.

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