JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

  • Jang, Young In (School of Electronics Engineering, Kyungpook National University) ;
  • Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) ;
  • Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) ;
  • Eun, Hye Rim (School of Electronics Engineering, Kyungpook National University) ;
  • Kwon, Ra Hee (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University) ;
  • Kwon, Hyuck-In (School of Electrical and Electronics engineering, Chung-Ang University) ;
  • Kang, In Man (School of Electronics Engineering, Kyungpook National University)
  • Received : 2015.04.24
  • Accepted : 2015.07.14
  • Published : 2015.10.30
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Abstract

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

Keywords

References

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