• Journal of Electrical Engineering and Technology
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• v.4 no.3
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• pp.418-422
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• 2009

We synthesized new electroluminescence materials [(1,10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q and investigated their electron transport properties. We used Zn(phen)q and $Alq_3$ for the conductive materials and measured their electron transport properties as a function of the organic layer thickness. The difference between Zn(phen)q and $Alq_3$ as electron transporting materials suggests that the electrical properties depends on the carrier injection.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.273-281
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• 2016

This review examines computational simulations of thermoelectric properties, such as electrical conductivity, Seebeck coefficient, and thermal conductivity. With increasing computing power and the development of several efficient simulation codes for electronic structure and transport properties calculations, we can evaluate all the thermoelectric properties within the first-principles calculations with the relaxation time approximation. This review presents the basic principles of electrical and thermal transport equations and how they evaluate properties from the first-principles calculations. As a model case, this review presents results on $Bi_2Te_3$ and Si. Even though there is still an unsolved parameter such as the relaxation time, the effectiveness of the computational simulations on the transport properties will provide much help to experimental scientist researching novel thermoelectric materials.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.457-462
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• 2017

A linear carbon chain with pure sp hybridization has been intensively studied for the application of its intrinsic electrical properties to electronic devices. Owing to the high chemical reactivity derived from its unsaturated bond, encapsulation by carbon nanotubes (CNT) is provided as a promising method to stabilize the geometry of the linear carbon chain. Although the influence of CNT on the carbon chain has extensively been studied in terms of both electronic structure and geometries, the electron transport properties has not been discussed yet. In this regard, we provide the systematic atomic-scale analyses of the properties of the linear carbon chain within CNT based on a computational approach combining density-functional theory (DFT) and matrix green function (MGF) method. Based on the DFT calculations, the influence of CNT on electronic structures of the linear carbon chain is provided as well as its electrical origin. Via MGF calculations, we also identify the electron transport properties of the carbon chain - CNT complex.

• Journal of Magnetics
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• v.19 no.2
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• pp.140-145
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• 2014

The electrical transport properties of YBCO single layers thin film have been investigated using different physical techniques. For the purpose, the physical properties are probed numerically with help of simulation modelling. The physical transport properties were also estimated with temperature and magnetic fields limits using thermally-activated flux flow model with some modifications. The result of present simulation modelling indicated that the magnitude of activation energy depends on temperature and magnetic field. The simulations revealed thickness dependent physical transport properties including electrical and magnetic properties of deposited YBCO single layers thin films. Furthermore, it shows the temperature dependence of the pinning energy. In the nutshell, the result can be used to improve the Superconducting Properties ($T_c$) of the YBCO single layers thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.657-661
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• 2014

When an abnormal condition occurs due to a fault current at a consumer location where electricity is supplied through high-Tc superconducting(HTS) cable, the HTS cable would be damaged if there is no appropriate method to protect it. The fault-current-limiting type HTS cable that is suggested in this study has a structure of transport part and limit part. It conduct a zero impedance transport current at ordinary operations and carry out a fault current limiting at extraordinary operations. To make a perfect this structure, it is essential to investigate electrical properties of transport part that comprise the fault-current-limiting type HTS cable. In this paper, transport part that comprise HTS wire with copper stabilization layer is examined the current transport properties and the stability evaluation.

• Advances in nano research
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• v.17 no.2
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• pp.137-147
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• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2761-2764
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• 2011

A new Ruddlesden-Popper phase $NdSr_2MnCrO_7$ has been prepared by the standard ceramic method. The powder X-ray diffraction studies suggest that the phase crystallizes with tetragonal unit cell in the space group I4/mmm. The electrical transport properties show that the phase is an electrical insulator and the electrical conduction in the phase occurs by a 3D variable range hopping mechanism. The magnetic studies suggest that the ferromagnetic interactions are dominant.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1551-1553
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• 2000

Superconducting power cable is one of the most promising energy application of high-$T_c$ superconductors (HTS). A prototype HTS cable have been constructed multi-layer cable using Bi-2223 tape and tested. The result shows that the total transport current of HTS cable in $LN_2$ was 475[A], and transport current passed through almost the outer layer (2-layer). Also, AC transport losses in outer layer of HTS cable was proportion to $I^2$ and higher than losses of inner layer. As magnetic distribution were concentrated on outer layer.